JLA MARKING CODE Search Results

Contextual Info: Yageo • print-friendly version Product Detail Information Product Group Resistor Chips Ordering Code RC0805JR-0768K Ordering Code 232273061683 Unified CTC RC0805JR-0768K Additional Product Code9C08052A6802JLHFT Description General Purpose 0805 68 kOhm +-5% Paper 178mm 7"

YAGEO 0805

Contextual Info: Yageo • print-friendly version Product Detail Information Product Group Resistor Chips Ordering Code RC0805JR-0710K Ordering Code 232273061103 Unified CTC RC0805JR-0710K Additional Product Code9C08052A1002JLHFT Description General Purpose 0805 10 kOhm +-5% Paper 178mm 7"

YAGEO CHIP RESISTORS Mounting

Abstract: 232273061102L Chip Resistors Mounting Yageo 07-1K
Contextual Info: Yageo • print-friendly version Product Detail Information Product Group Resistor Chips Ordering Code RC0805JR-071K Ordering Code 232273061102 Unified CTC RC0805JR-071K Additional Product Code9C08052A1001JLHFT Description General Purpose 0805 1 kOhm +-5% Paper 178mm 7"

YAGEO CHIP RESISTORS MARKING

Abstract: YAGEO CHIP RESISTORS Mounting
Contextual Info: Yageo • print-friendly version Product Detail Information Product Group Resistor Chips Ordering Code RC0805FR-0733K2 Ordering Code 232273463323 Unified CTC RC0805FR-0733K2 Additional Product Code9C08052A3322FKHFT Description General Purpose 0805 33,2 kOhm +-1% Paper 178mm 7"

Chip Resistors Mounting

Abstract: Yageo Yageo part marking
Contextual Info: Yageo • print-friendly version Product Detail Information Product Group Resistor Chips Ordering Code RC0805FR-07909K Ordering Code 232273469094 Unified CTC RC0805FR-07909K Additional Product Code9C08052A9093FKHFT Description General Purpose 0805 909 kOhm +-1% Paper 178mm 7"

RC0805JR-07100K

Abstract: YAGEO CHIP RESISTORS MARKING
Contextual Info: Yageo • print-friendly version Product Detail Information Product Group Resistor Chips Ordering Code RC0805JR-07100K Ordering Code 232273061104 Unified CTC RC0805JR-07100K Additional Product Code9C08052A1003JLHFT Description General Purpose 0805 100 kOhm +-5% Paper 178mm 7"

Contextual Info: T - o l - ô l Silicon Low Leakage Diode Array 3SE D • fl2 3 b 3 2 Q SIEM ENS/ Q Q lb 5 b 4 3 BAW156 ISIP S P C L •, SEM ICON DS • Low Leakage applications • Medium speed switching times • Common anode Type Marking Ordering code 8-mm tape Package

marking a4s

Contextual Info: SIEMENS Silicon Switching Diode Array BAV 70 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel BAV 70 A4s Q68000-A6622 Pin Configuration Package1) 3 ° fri I SOT-23 K l -S EH A0700« Maximum Ratings per Diode Parameter

a2 marking

Abstract: Q62702-A1066 Marking Code to on semiconductor 720
Contextual Info: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code tape and reel 1 2 3 Q62702-A1065

zener diode 33B

Abstract: 27B zener diode 15B zener diode Zener Diode SOD-323 marking code 2b zener 27b zener DIODE GDZ 9.1 1.15 ZENER marking code DIODE d6 diode marking 6B SOD323 Zener Diode marking 27b
Contextual Info: GDZ Series Zener Diode Vz Range 2.0 to 36V Power Dissipation 200mW SOD-323 Mounting Pad Layout 0.055 1.40 0.062 (1.601 Mechanical Data_ Features_ Case: SOD-323 Plastic Package Weight: Approx. 0.004g Marking Codes: See table on next page

MARKING GA

Abstract: A779 baw78c
Contextual Info: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8

BCW71K1

Abstract: BCW72R-K5 BCW71 BFQ31 BCW71R BCV72 Ferranti Semiconductors BCW69 BCW72 BCW72R
Contextual Info: I FERRANTI BCW71 BCW72 T IIsemiconductors L NPN S ilicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r low level, general purpose applications. Com plem entary to the BCW 69 and BCW7Q. Encapsulated in the popular SOT-23 package these devices

FMMT3906

Abstract: FMMT3904 equivalent FMMT3905 BCV72 BCW29 BFQ31 BFQ31A BFS20 FMMT3903 FMMT3904
Contextual Info: FERRANTI semiconductors FMMT3903 FMMT3904 NPN Silicon Planar General Purpose Sw itching Transistors D E S C R IP T IO N These d e vice s are intended fo r use in sm all and m edium sign a l a m p lifica tio n a p p lica tio n s fro m d.c. to radio frequencies.

E472M

Abstract: KX 392M KX 102M DE0910 KX 221K DE1410 332m kx 250
Contextual Info: This is the PDF file of catalog No.C80E-4. No.C80E4.pdf CERAMIC CAPACITOR muRala. Safety Standard Recognized Ceramic Capacitor Type K X 125 C G uaranteed R ecognized in 10 C ountries • FEATURES 1. We design capacitors in much more compact size than KD type,having reduced the diameter by 20% max.

Contextual Info: Central” CLL4678 THRU CLL4717 Semiconductor Corp. SURFACE MOUNT LOW LEVEL SILICON ZENER DIODES 1.8 VOLTS THRU 43 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4678 Series Silicon Low Level Zener Diode is a high quality voltage regulator designed for applications

marking code zt sot23

Abstract: marking z.1 diode
Contextual Info: Centrar CMPZ4678 THRU CMPZ4717 Sem iconductor Corp. 350m W LOW LEVEL ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ4678 Series silicon zener diode is a high quality voltage regulator designed for applications requiring an extremely low operating current and low leakage.

L-467

Contextual Info: Central" CLL4678 THRU CLL4717 Sem iconductor Corp. 500mW LOW LEVEL ZENER DIODE 5% TOLERANCE DESCRIPTION: T h e C E N TR A L S E M IC O N D U C T O R L4678 Series Silicon Z en er Diode is a high quality voltage regulator designed for applications requiring an

Contextual Info: NMC9346 2 National Semiconductor NMC9346 1024-Bit Serial Electrically Erasable Programmable Memory General Description Features The NMC9346 is a 1024-bit non-volatile, sequential E2PROM, fabricated using advanced N-channel E2PROM technology. It is ar external memory with the 1024 bits of

Contextual Info: • bbS3c13]i QQ245bl 4Tb H A P X N AUER PH ILIPS/DISCR ETE BCW29 BCW30 b?E » SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.

BCV71

Abstract: BCV72
Contextual Info: • b bS a^ B l GGSMSSi ÛMÛ H A P X N AMER P H I L I P S / D I S C R E T E BCV71 BCV72 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli cations in thick and thin-film circuits.

bc860

Abstract: MARKING CODE 3J marking 4A
Contextual Info: ITT SEMICOND/ INTERMETALL SDE T> • Mbñ2711 0DD2S'ì4 b’iG M I S I T - a q - i s BC856 . . . BC860 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits.

Contextual Info: 3SE D • 023fc>3EQ G D l? n 3 T I SIP PZT 3904 NPN Silicon Switching Transistor SIEMENS/ SPCLi SEMICONDS _ T - s s r - \\ • High DC current gain 0.1 to 100 mA • Low collector -emitter saturation voltage • Complementary type: PZT 3906 PNP Type Marking

BSS66

Abstract: cg 5763 BSS66R BSS67R FMMT2369 BFQ31 BSS67 160i BC 5763 BSS69
Contextual Info: i FERRANTI BSS66 BSS67 T IIsemiconductors L NPN Silicon Planar M e d iu m Power S w itc h in g Transistors DESCRIPTION These devices ere intended fo r general purpose switching applications. Com plementary to th e BSS69 and BSS70. Encapsulated in th e popular SOT-23 package, these

Contextual Info: ¡ f i H U S E M I C O N D U C T O R U A R R HS-6508RH IS Radiation Hardened 1024x1 CMOS RAM December 1992 Pinouts Features • Functional Total Dose 2 x 104 RAD Si HS1-6508RH 16 PIN CERAMIC DIP CASE OUTLINE D2, CONFIGURATION 3 TOP VIEW • Latch-Up Free To > 5.0 x 1011 RAD(Si)/s