JK 330N Search Results

npld610

Abstract: NPLD610-10 PALCE610 EP610 ORDERING PLD610 DPLD610-25 intel 85C060 85C060 TNPLD610 intel PLD
Contextual Info: in tj ¡PLD610 FAST 16-MACROCELL CMOS PLD Function, Pin, and JEDEC Compatible with EP600, EP610, EP610A, EP630, PALCE610,85C060 and 5C060 PLDa • * m - m r ' "< ^ . *. » • tpQ 10 ns, 100 MHz Counter Frequency w/lnternal Feedback ■ Ice = 105 m A max-@ 1 MHz

INTEL PLD910

Abstract: intel iPLD910 ipld910 eprom connection ep910a 85C090 IPLD910-12 DPLD910 intel PLD
Contextual Info: in t e i. ÌPLD910 FA ST 24-MACROCELL CMOS PLD Function, Pin, and JEDEC Compatible with EP900, EP910.EP91QA, 85C090 and 5C090 • tpo 12 ns, 62.5 MHz w/Feedback, Clock to Output 8 ns ■ Ice = 150 mA Max @ 1 MHz ■ Programmable Low-Power Option for “Standby” Operation; 60 ju,A Typ. in

Contextual Info: March 1997 ^ÉL M icro Linear ML6691 100BASE-T M II-to-PM D Transceiver GENERAL DESCRIPTION FEATURES The ML6691 implements the upper portion of the physical layer for the Fast Ethernet 1OOBASE-T standard. Functions contained in the ML6691 include a 4B/5B encoder/

85C090

Abstract: N85C090-20
Contextual Info: in te i 85C090 24-MACROCELL CHMOS jaPLD • Function, Pin, and JEDEC Compatible with 5C090, EP900, EP910 and EP930 ■ Extensive Software and Programming Support via Intel and Third-Party Tools ■ tpo 15 ns, 66 MHz w/Feedback, Clock to Output 9 ns ■ 1-Micron CHMOS HIE* EPROM

D85C060-25

Abstract: PLD610 85C060 P85C060-25 PLD610-25 P85C060-15 D85C060-10 intel 85C060 n85c060 pld610-15
Contextual Info: intel ¡PLD610/85C060 FAST 16-MACROCELL CMOS PLD Function, Pin, and JEDEC Compatible with EP600, EP610, EP610A, EP630, PALCE610, 85C060 and 5C060 PLDs • tpD 10 ns, 100 M H z C o u n te r F req u en cy w /ln te rn a l F e e d b a c k ■ E xte n s ive S o ftw a re an d P ro g ram m in g

PA0016

Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

SD-53856-007

Contextual Info: SD-53856-007.1-0 I S S'i00-9SBES-aS, ^ s -rx N ¿B 0 rs0 -N 3 ° N 0 is s in a 3 d X310W ^ 'ON 01 N 3 iiid M in o H im A d V 1 3 Id d 0 d d SI a3sn 1VH1 1 0 0 - 9 5 8 ^ 5 - a S 1 3 3 H S |_ ‘ ON Q B l V d -dddd O d d O O ÜV31- N

SD1036

Contextual Info: KS8735 – Quad 100 LV Repeater with PHY Introduction The KS8735 is an Integrated 4-port 100BaseTX Repeater optimized for a low-cost system solution for unmanaged 100BaseTX hubs. It consists of four 100BaseTX ports with the entire transceiver and physical layer, including

Contextual Info: frS-rxiM ¿ 60 rZ0 -N3 • N o is s ir a s d N s ii id M i n o H i m a a s n 3B i o n a in o H S o n v a d iv y o y y o o N i X310W 0 1 A y v i3 iy d 0 d d S I 1VH 1 NOUVWdOdNI 5 N IV 1 N 0 0 ONIMVya SIH 1 JO I i.0 0 - 0 £ S £ S - a S 'ON 1 3 3 H S _'ON BNIMVdQ

Contextual Info: T O SH IB A SF5G42,SF5J42 TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF5G42, SF5J42 MEDIUM POWER CONTROL APPLICATIONS Unit in mm • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage V d rm y =400j 600V V rrm J • Average On-State Current IrT AV =5A

Contextual Info: T O SH IB A SF5G42,SF5J42 TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF5G42, SF5J42 Unit in mm MEDIUM POWER CONTROL APPLICATIONS. • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current JEDEC TO-220AB Package. • V d rm

tny 177

Abstract: tny 178 ramp generator TDA1872A 50HZ 60HZ generator crt flyback tny 66 50HZ generator ln400 tda 1872a
Contextual Info: r z 7 S C S -T H O M S O N m 7# T D A 1872A VERTICAL DEFLECTION CIRCUIT • SYNCHRONIZATION CIRCUIT ■ PRECISION OSCILLATOR AND RAMP G ENE­ RATOR ■ 5 0 /6 0 H Z SYNCHRONIZATION IDENTIFICA­ TION CIRCUIT WITH AUTOM ATIC AM PLI­ TUDE CORRECTION AND STATUS OUTPUT

Contextual Info: TOSHIBA TD62591~594AP,595-598AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62596AF TD62597AP, TD62597AF, TD62598AP, TD62598AF 8CH SINGLE DRIVER The TD62591AP, TD62591AF Series are comprised of eight

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:

561R

Contextual Info: General Information www.vishay.com Vishay Cera-Mite Ceramic DC Disc, RFI, and Safety Capacitors IN ACCORDANCE WITH IEC RECOMMENDATIONS CERAMIC CAPACITORS ARE SUBDIVIDED INTO TWO CLASSES: • CERAMIC CLASS 1 or low-K capacitors are mainly manufactured of titanium dioxide or magnesium silicate

CERAMIC DISC CAPACITOR

Abstract: lead forming Code, vishay, capacitors CERA-MITE y5v cera-mite capacitor marking code EIA-198-1 3n3 Ceramic Disc Capacitors cera-mite z5u .05 565r N1000 N3300
Contextual Info: General Information Vishay Cera-Mite Ceramic DC Disc, RFI and Safety Capacitors IN ACCORDANCE WITH IEC RECOMMENDATIONS CERAMIC CAPACITORS ARE SUBDIVIDED INTO TWO CLASSES: • CERAMIC CLASS 1 or low-K capacitors are mainly manufactured of titanium dioxide or magnesium silicate

VJ Safety Certified Capacitors X7R

Abstract: Vishay Cera-Mite 562R10TST47
Contextual Info: 561R and 562R Series Vishay Cera-Mite Lower Voltage Ceramic Disc Capacitors 1000 VDC Temperature and Voltage Stabilized FEATURES Fig. 1 LO 0.125" max. 3 D max. Low losses High stability High capacitance in small size Complete Range of Capacitance Values

philips ecg replacement guide

Abstract: alarm sonar 560 mm alarm sonar 560 r interfacing stepper motors with 80386 microprocessor PHD48 sensors used for measuring heart beat 2N30S5 plhs18p8 signetics military data handbook PLS105
Contextual Info: Philips Components-Signetics Programmable logic design and application notes Programmable Logic Devices Today's engineer is constantly striving to consolidate higher complexity and more feature-intensive circuits into designs without sacrificing flexibility. In a

SN76477

Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Contextual Info: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p

MB8264-15

Abstract: MB8264-20 mcm6665 IMS2600 MB6264 pd4164 MB8264 PD416 tms4164 MK4164
Contextual Info: ,J F U J IT S U M ICROELECTRONICS. INC. MS8264-15 ^7 H p p P lr B iW NMOS 65,536-BIT DYNAMIC RANDOM ACCESS MEMORY wm- U-c. DESCRIPTION The Fujitsu MB8264 is a fu lly de­ coded, dynam ic NMOS random ac­ cess memory organized as 65536 one-bit words. The design is optim iz­

hp 530 charging CIRCUIT diagram

Contextual Info: r r u r m TECHNOLOGY _ LTC1479 PowerPath C ontroller fo r Dual B attery Systems F€flTUft€S DCSCRICTIOn • Complete Power Path Management for Two Batteries, DC Power Source, Charger and Backup ■ Compatible with Li-Ion, NiCd, NiMH and Lead-Acid

smd code wKX

Abstract: samsung nc110 samsung nc108 AR5112 TP2322 ELM7S08WS TP2320 smd zG sot 23 TP2323 GND194
Contextual Info: [ Z zhtz|unGwyvwypl{hy€ Y X {opzGkvj|tlu{Gjvu{hpuzGjvumpklu{phs wyvwypl{hy€Gpumvyth{pvuG{oh{Gpz zhtz|unGlslj{yvupjzGjvNzGwyvwly{€U kvGuv{GkpzjsvzlG{vGvyGk|wspjh{lGmvyGv{olyz ljlw{GhzGh|{ovyplkGi€Gzhtz|unU k k jpjospk j i jw|GGGGGGaG ihuphzVkv{ohu j—GzŒ›GaG tjoTtGvkltR

Contextual Info: MULTILAYER CHIP CERAMIC CAPACITOR m tm , « ü r s ttH s a . m ttz m m m m m , • * M M s « íU M T lf t . * JW rfciffW R rJSttín iiW Stt. * S fli» * m m ^ V JE « *% « *» m um m 1 50m A 5S 10OOV - 2000V 1. 2 i ^ ^ * J l 50m A 5S > 2000V 1.2 m È W J !