JI BIPOLAR Search Results

Transistor C604

Contextual Info: PD - 9.780A International ïo r Rectifier IRGP430U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: JI.' i ’»<: P54/74FCT521/A/B/C P54/74PCT521/A/B/C ULTRA-HIGH SPEED CMOS 8-BIT IDENTITY COMPARATORS j A - - FEATURES Function, Pinout, and Drive Compatible with the

ASIC Capabilities

Abstract: Calogic Bipolar Junction Transistor metal detectors circuits JI Bipolar
Contextual Info: Full Custom Analog ASIC Capabilities Calogic designs and manufactures Bipolar Junction Isolated JI and Dielectrically Isolated (DI) products. SPICE models, layout, DRC and ERC are available. These processes are executed in Calogic’s state of the art wafer fabrication facility located in

transistor c246

Abstract: transistor c245 c245 transistor
Contextual Info: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

GT8G121

Abstract: a1909 vqe 23
Contextual Info: TOSHIBA GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 G 1 21 Unit in mm STROBE FLASH APPLICATIONS • • • 4th Generation Trench Gate Structure Enhancement-Mode Low Saturation Voltage U V ia * .; ( @ I ( j — jI oC \JA . At t j\

24cc02

Abstract: MBM10422 MBM10422A-7 MBM10422A FPT-24CC02
Contextual Info: F U JI T S U M ICROELECTRONICS. INC. 1 *1 / — ' ECL 1024-BIT BIPOLAR ï1' RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM10422A is a fully decoded 1024-bit ECL read/write random access memory designed for high-speed scratch pad, con­ trol and buffer storage applica­

SL4 diode

Abstract: SR330 8 bit half adder 74 Z03 Series ZD3,9 CD60 CD61 CD62 DM10900 TUL5014
Contextual Info: 2900 Family/ Bipolar Microprocessor National J ji Semiconductor PRELIMINARY DM10900 8-Bit Parity ALU Slice Features General Description The DM10900 8-Bit M ic ro p ro c e s s o r s lic e is a cascadable device desig ned fo r use in high pe rform ance ce n ­

Contextual Info: ^ Supertex inc. VN0655 VN0660 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information JI bZL Order Number / Package TO-39 550V 200 0.25A VN0655N2 600V 200 0.25A VN0660N2 R DS<ON max) TO-92 TO-220 Dicet VN0655N3 VN0655N5 VN0655ND VN0660N3 VN0660N5

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information ^DS O N BVdgs (max) 60V 5.0ft JI BVdss / Order Number / Package TO-92 2N7000 75mA Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

74FCT244AT

Abstract: 74FCT244ATM 74FCT241 74fct240 CD74FCT240AT CD74FCT244AT FCT240AT 74fct540 74FCT244
Contextual Info: CD74FCT240AT and CD74FCT244AT were not acquired from Harris Sem iconductor. JI/, _ In s t r u m I n t s Data sheet acquired from Harris Sem iconductor SCH S270A CD54/74FCT240, CD54/74FCT240AT, CD54/74FCT241, CD54/74FCT244, CD54/74FCT244AT _ _ _ . . . FCT Interface Logic

PMS01

Contextual Info: /= T " * ji. S G S -T H O M S O N KílDIgIMlIlLlgirMIIKgg T S 5 5 6 C ,I,M LOW POWER DUAL CMOS TIMERS • VERY LOW POWER CONSUMPTION : ■ 100|iA typ at Vcc = 5V ■ HIGH MAXIMUM ASTABLE FREQUENCY 2.7MHz * PIN-TO-PIN AND FUNCTIONALLY COMPATIBLE WITH BIPOLAR NE555

transistor HAN 819

Contextual Info: QPA602 High-Speed Precision Difet• OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • • • • • • • PRECISION INSTRUMENTATION WIDE BANDWIDTH: 6.5MHz HIGH SLEW RATE: 35V/}ia LOW OFFSET: ±250|iV max LOW BIAS CURRENT: ±1pA max FAST SETTLING TIME: 1 ji* to 0.01%

Contextual Info: □Mn ADC-530 12-Bit, Ultra-fast, Low-Power A/D Converter FEATURES ji 12-Bit resolution 350 Nanoseconds maximum conversion time Low-power, 2.1 W Small initial errors Three-state output buffers -55 to +125 °C operation Small 32-pin DIP No missing codes i 4L

Mitsubishi Electric IGBT MODULES

Abstract: DVD pickup assembly gallium phosphide band structure mitsubishi sic MOSFET blue Laser-Diode Ghz BU1570KN DVD optical pick-up assembly general electronics mini projects topics apollo guidance automatic plant watering
Contextual Info: For the Year Ended March 31, 2007 Inspire Innovation Design of the Future The Keage district was a harbinger of Kyoto's modernization. As one approaches the temple Nanzen-ji, majestic brick arches rise into sight. The Suirokaku aqueduct, built at the dawn of the Meiji era,

LT1013CP

Abstract: LT1014 LT1014 DIE
Contextual Info: TEXAS INSTRUMENTS Informational Notification for the Qualification of LT1014 Die Revision H October 2, 1998 Abstract Texas Instruments Inc., Standard Linear and Logic products SLL has completed a redesign/shrink of the LT1014 device. This device is manufactured in the Sherman Wafer Fab (SFAB) using qualified JI

Contextual Info: SCOPE: CMOS, 8-BIT, 8-CHANNEL DATA ACQUISITION SYSTEM Device Type 01 02 03 Generic Number MAX161A x /883B MAX161B(x)/883B MAX161C(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter Mil-Std-1835 JI

tda 7851

Abstract: TDA 7851 A B1B12 AD311 74LS244 buffer AD39S dataset AD394 AD395 audio boosters
Contextual Info: liP Compatible Multiplying Quad 12-Bit D/A Converter ANALOG DEVICES $S t£ jr •■ V - i -. >->■■■ > \" . ji- ", . ■ . ; FEATURES Four Complete 12-Bit CMOS DACs with Buffer Registers Linearity Error ±1/2LSB Tmin-Tmax AD394, AD395K,T Factory-Trimmed Gain and Offset

LT1013CP

Abstract: LT1013
Contextual Info: TEXAS INSTRUMENTS Informational Notification for the Qualification of LT1013 Die Revision H September 30, 1998 Abstract Texas Instruments Inc., Standard Linear and Logic products SLL has completed a redesign/shrink of the LT1013 device. This device is manufactured in the Sherman Wafer Fab (SFAB) using qualified JI

hall 503 911

Abstract: MAR 740 MOSFET TRANSISTOR mitsubishi sic MOSFET health insurance philippines nec 2701 271 Ceramic Disc Capacitors an 503 hall sensor Laser Diode for dvd Recording 104 Ceramic Disc Capacitors 490-48
Contextual Info: Annual Report 2006 For the Year Ended March 31, 2006 Ambrosial Gaze A dragon among the clouds is majestically painted on the ceiling of the Lecture Hall in the Myoshin-ji temple. No matter where you are in the great hall, the dragon’s eyes are watching you.

10410

Contextual Info: ¡1111 _ F U JI T S U / ECL 256-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10410 September 1978 256-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The MBM 10410 is an ECL 256-B it Read/Write Random Access Memory R A M }, organized 256 w ords x 1 bit. It has a typical access tim e o f 20 ns

LBE1004R

Abstract: amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier LBE1010R LCE1004R LCE1010R Marking LBE
Contextual Info: OLE T> N AMER P H IL IP S /D IS C R E T ! •FbbSB^l MAINTENANCE TYPES Q O lim ? JI' for new design use LBE/LCE2003S and LBE/LCE2009S S ■ LBE/LCE1004R LBE/LCE1010R MICROWAVE LINEAR POWER TRANSISTORS N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.

VN0650N3

Contextual Info: V N 06E L Ji S u p e r te x in c . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices max (min) TO-39 TO-92 TO-220 Dicet 450V 16£2 0.5A VN0645N2 VN0645N3 VN0645N5 VN0645ND 500V 16U 0.5A VN0650N2 VN0650N3 VN0650N5

Contextual Info: MTCfji] JI T -l 3mm Bi-Polar Indicator Lamp U LTL- 10CEJ High Efficiency Red I C L 1k I Features Package Dimensions • Dual Hi.Eff.R ed chips are m atched for uniform light output. • T-1 type package. • Long life solid sta te reliability. (.118) 1.0

HARRIS 2425

Abstract: hi pot test sheets
Contextual Info: HARRIS SEMICOND SECTOR 77 ji 3 0 2 2 7 1 HARRIS SEMICOND SECTOR D E | 4BD2S71 OOOTIHt, T | ~ 77C 09X36 D Q BHARRIS Fast Sample and Hold Features Applications • Maximum Acquisition Time 10V Step to 0.1% • 12-Bit Data Acquisition 4/us (10V Step to 0.01%). Bus