JEDEC TO 243 Search Results

PS 307 5A

Abstract: 12 VOLT 100 AMP smps
Contextual Info: OM5262SA/RA/DA HERMETIC JEDEC TO-254AA HIGH EFFICIENCY, CENTER-TAP HIGH VOLTAGE RECTIFIER 24 Am p, 1000 Volt, 65 ns trr Soft Recovery FEATURES Soft Recovery Characteristics Hermetic Metal Package, JEDEC TO-254AA Very Low Forward Voltage Very High Reverse Voltage Capability

Contextual Info: BD243B/BD243C BD244B/BD244C COMPLEMENTARY SILICON POWER TRANSISTORS • STMicraelectronics PREFERRED SALESTYPES DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear

Contextual Info: ADVANCF TVMDn Am29LV008T/Am29LV008B 8 Megabit 1,048,576 x 8-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended operating voltage range — 2.7 to 3.6 V for read and write operations ■ Compatibility with JEDEC standards

RSIP

Abstract: pin diagram of ic 7442
Contextual Info: ADVANCE INFORMATION AM D3 Am29LV004T/Am29LV004B 4 Megabit 524,288 x 8-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended operating voltage range — 2.7 to 3.6 V for read and write operations ■ Compatibility with JEDEC standards

marking AAG

Abstract: TDFN8 a5
Contextual Info: MCP98243 Memory Module Temperature Sensor w/ EEPROM for SPD Features Description • • • • • Microchip Technology Inc.’s MCP98243 digital temperature sensor converts temperature from -40°C and +125°C to a digital word. This sensor meets JEDEC Specification JC42.4-TSE2002B3 Platform

TP30-100

Abstract: TP30-120 TP30-62 TP30-68 VDE0433 VDE0878 transformer 220v 2a
Contextual Info: TP30-xxx Series TRISILTM FEATURES n n n n n BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150 mA min. REPETITIVE PEAK PULSE CURRENT : IPP = 30 A, 10/1000 µs. JEDEC REGISTERED PACKAGE OUTLINE DO-15 DESCRIPTION

PC133 registered reference design

Contextual Info: PRELIMINARY 128MB / 256MB x72, ECC 168-PIN SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT9LSDT1672A - 128MB MT18LSDT3272A - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • PC133- and PC100-compliant • JEDEC-standard 168-pin, dual in-line memory

Contextual Info: F@l semiconductor Data Sheet &8V to 400V GPP TRANSIENT VOLTAGE SUPPRESSORS Mechanical Dimensions JEDEC D0-201AD * T .1901 .285 .375 . 1.00 Min. 1 _L i 1 " Features • 1500 WATT PEAK POWER PROTECTION ■ EXCELLENT CLAMPING CAPABILITY ■ MEETS UL SPECIFICATION 94V-0

Contextual Info: MÄV i o 1993 IND: -30 Advanced Micro Devices PALLV16V8Z-30 Low-Voltage, Zero-Power 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3 V JEDEC compatible — Vcc = +3.0 V to +3.6 V ■ Zero-power CMOS technology

BSO072N03S

Abstract: JESD22
Contextual Info: BSO072N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS on ,max 6.8 mΩ ID 15 A 1 • Qualified according to JEDEC for target applications • N-channel

SE2432L

Contextual Info: DATA SHEET • Small QFN 24-pin, 3 x 4 mm package (MSL1, 260 °C per JEDEC-J-STD-020) Skyworks Green products are compliant with all applicable legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number

Contextual Info: SMP30-XXX Series T R IS IL TM FEATURES • BIDIRECTIONAL CROWBAR PROTECTION. ■ VOLTAGE RANGE: FROM 62 V TO 270 V. ■ HOLDING CURRENT: |H = 150 mA min. ■ REPETITIVE PEAK PULSE CURRENT : Ipp = 30 A, 10/1000 |is. ■ JEDEC REGISTERED PACKAGE OUTLINE DESCRIPTION

Contextual Info: TP30-XXX Series T R IS IL FEATURES • BIDIRECTIONAL CROWBAR PROTECTION. ■ VOLTAGE RANGE: FROM 62 V TO 270 V. ■ HOLDING CURRENT: |H = 150 mA min. ■ REPETITIVE PEAK PULSE CURRENT : Ipp = 30 A, 10/1000 |is. ■ JEDEC REGISTERED PACKAGE OUTLINE DESCRIPTION

sla 4038

Abstract: 4008 ic for 8bit full adder 4094 bp 4014 bp 2W21 sla 4051 IC4116 4068 BP tc 4030 IC 4093 bp
Contextual Info: ¡7] 1. C2MOS Standard Package Components Features o f The C 2MOS 1 The TC4xxxB Series C2MOS are designed and manufactured with the ratings and characteristics defined by the EIA/JEDEC standards. Specifically, these include basic requirements such as: Compatibility with wide supply voltage range. (3V to 18V)

O-214AC

Abstract: HY- 211 94V hy 214 P4SMAJ10 P4SMAJ10A P4SMAJ11 P4SMAJ11A SMA RM P4SMAJ15C AK 1057
Contextual Info: Approve Sheet Part Number: P4SMAJ SERIES 3.DATA SHEET P4SMAJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SMA / DO-214AC VOLTAGE - 5.0 to 220 Volts 400 Watt Peak Power Pulse MECHANICAL DATA Case: JEDEC DO-214AC low profile molded plastic Terminals: Solder leads, solderable per MIL-STD-750, Method 2026

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

D0310

Contextual Info: 3QE D • 7ci2clE37 QQ310bi b M f Z 7 SGS-THOMSON ^ 7# 5 [L[l mm(Q*S BSX39 S G S-THOMSON HIGH-SPEED SATURATED SWITCH DESCRIPTION The BSX39 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is designed for very fast switching applications up to 500 mA.

SA10

Abstract: SA10A SA11 SA11A SA12 SA12A SA13 SA13A SA14
Contextual Info: Data Sheet Description 5.0V to 170V GPP TRANSIENT VOLTAGE SUPPRESSORS TVS Device SA5.0.170 Load Uni-Polar Mechanical Dimensions JEDEC 204-AC TVS Device .240 .255 .120 .140 Load 1.00 Min. .031 typ. Bi-Polar Features n 500 WATT PEAK POWER PROTECTION n TYPICAL IR < 1µA ABOVE 10V

Contextual Info: P R lt iM I N A R Y ^ ^ - COM’L: -10, -15 a PALLV22V10 Family Advanced Micro Devices Low-Voltage, 24-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3 V JEDEC compatible — Vcc = + 3.0 V to 3.6 V ■ Commercial operating temperature range

Contextual Info: « F IN A L COM ’L: -15/20 MACHLV210-15/20 Advanced Micro Devices High Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3-V JEDEC com patible ■ 50 MHz fMAx external — Vcc = +3.0 V to +3.6 V ■ 38 Inputs with advanced pull-up/pull-down

2N2894

Abstract: 3012
Contextual Info: 2N 2894 2N 3012 2N 3209 SILICON PLANAR PNP HIGH-SPEED S ATU R ATED SWITCHES The 2N 2894, 2N 3012 and 2N 3209 are silicon planar epitaxial PNP transistors in Jedec T O -1 8 metal case, intended fo r high speed, lo w saturation switching applications up to 100 mA.

Contextual Info: FINAL a COM’L: -12 Advanced Micro Devices M A C H L V 2 1 0 - 1 2 High Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3-V JEDEC compatible — V c c = +3.0 V to +3.6 V ■ 58 MHz fMAxexternal Commercial ■ 38 Inputs with advanced pull-up/pull-down

A197P

Abstract: a197 1n3736 1N4053 A500LC GE A390C Rectifier Diode 1N3735 1N4045 A190 A190A
Contextual Info: R E C T IFIE R S 250 TO 740 A M P E R E S JEDEC GE TYPE io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110 120 145 110 100 SPECIFICATIONS Max. average forward current 1 phase ' f m ( a v operation) (A)

Contextual Info: S G S-TH0P1S0N 07E D | 7 ^ 5 3 7 . -_ 67C 1 5 a 57 EPITAXIAL PLANAR NPN 0011.730 fl | 0^17 r rr. Ks k ^ S M Ì 4É E * 1 2*m LOW -LEVEL, LOW -NOISE A M P LIF IE R S The 2N 2483 and 2N 2484 are silicon planar epitaxial NPN transistors in Jedec TO -18 metal