JEDEC MO-153 AD Search Results

JEDEC MO-153

Abstract: MO-153-BD-1 MO-153BD-1
Contextual Info: Plastic Packages for Integrated Circuits Thin Shrink Small Outline Plastic Packages TSSOP M38.173 N INDEX AREA E 0.25(0.010) M E1 2 INCHES GAUGE PLANE -B1 38 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE (COMPLIANT TO JEDEC MO-153-BD-1 ISSUE F) B M SYMBOL

Contextual Info: February 1984 Revised February 1999 S E M I C O N D U C T O R TM MM74HCT00 Quad 2 Input NAND Gate General Description The M M 74H C T00 is a NAND gates fabricated using advanced silicon-gate C M OS technology w hich provides the inherent benefits of C M OS— low quiescent power and

Contextual Info: A S E M I R I C C O N H D U I L D C T O Revised February 1999 R TM MM74HC04 Hex Inverter are protected from dam age due to static discharge by inter­ nal diode clam ps to V qq and ground. General Description The M M 74H C 04 inverters utilize advanced silicon-gate

MM74HC*4050m

Abstract: 0-15V 74HC CD4049BC CD4050BC M16A MM74HC4049 MM74HC4049M MM74HC4050
Contextual Info: Revised O ctober 1999 SEMICONDUCTOR TM MM74HC4049 • MM74HC4050 Hex Inverting Logic Level Down Converter Hex Logic Level Down Converter General Description The M M 74H C 4049 and the M M 74H C 4050 utilize advanced silicon-gate C M O S technology, and have a m od­

MM74HC245AN

Abstract: M20D MM74HC245A MM74HC245AMTC MM74HC245ASJ MM74HC245AWM MS-013 MTC20
Contextual Info: Revised February 1999 EMICONDUCTGRTM MM74HC245A Octal 3-STATE Transceiver General Description T he M M 74H C 245A 3-STATE bidirectional buffer utilizes advanced silicon-gate C M O S technology, and is intended fo r tw o-w ay asynchronous com m unication between data

Contextual Info: S eptem ber 1983 Revised February 1999 E M IC O N D U C T G R T M MM74HC14 Hex Inverting Schmitt Trigger General Description Features The M M 74H C 14 utilizes advanced silicon-gate C M OS technology to achieve the low pow er dissipation and high noise im m unity of standard C M O S, as well as the capability

74HCT05

Contextual Info: Revised February 1999 S E M IC O N D U C T O R TM General Description The MM74HCT05 is a logic function fabricated by using advanced silicon-gate CMOS technology, which provides the inherent benefits of CMOS— low quiescent power and wide power supply range. The device is also input and out­

Contextual Info: Revised April 1999 E M I C Q N D U C T G R tm General Description Features The MM74HCT14 utilizes advanced silicon-gate CMOS technology to achieve the low power dissipation and high noise immunity of standard CMOS, as well as the capability to drive 10 LS-TTL loads.

MM74HCT74

Abstract: 74HCT 74LS M14A M14D M74HCT74MTC MM74HCT74M MM74HCT74SJ
Contextual Info: Revised January 1999 E M IC O N D U C T G R T M MM74HCT74 Dual D-Type Flip-Flop with Preset and Clear General Description tected from dam age due to static discharge by internal diode clam ps to Vc c and ground. T he M M 74H C T74 utilizes advanced silicon-gate C M OS

MM74HC08

Abstract: 74HC 74LS HC08 M14A M14D MM74HC08M MM74HC08MTC MM74HC08SJ diagram LG TV circuits
Contextual Info: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC08 Quad 2-Input AND Gate General Description All inputs are protected from dam age due to static dis­ charge by internal diode clam ps to V qq and ground. T he M M 74H C 08 AND gates utilize advanced silicon-gate

burp

Abstract: 74HCT00
Contextual Info: Revised February 1999 EMICQNDUCTGR tm MM74HCT00 Quad 2 Input NAND Gate General Description The MM74HCT00 is a NAND gates fabricated using advanced silicon-gate CMOS technology which provides the inherent benefits of CMOS— low quiescent power and wide power supply range. This device is input and output

74HCT

Abstract: M20D MM74HCT273 MM74HCT273MTC MS-013 MTC20
Contextual Info: Revised February 1999 E M IC O N D U C T G R T M MM74HCT273 Octal D-Type Flip-Flop with Clear General Description All inputs to this device are protected from dam age due to electrostatic discharge by diodes to Vc c and ground. T he M M 74H C T273 utilizes advanced silicon-gate C M OS

MM74HC04M

Abstract: 74HC 74LS M14A M14D MM74HC04 MM74HC04MTC MM74HC04SJ MTC14
Contextual Info: s e m ic o n d u c t o r Revised February 1999 MM74HC04 Hex Inverter General Description are protected from dam age due to static discharge by inter­ nal diode clam ps to V qq and ground. T he M M 74H C 04 inverters utilize advanced silicon-gate C M O S technology to achieve operating speeds sim ilar to

Q65110A7464

Abstract: LTW5SN NACH top mark smd 2U
Contextual Info: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Vorläufige Daten für OS-PCN-2009-034-A / Preliminary Data for OS-PCN-2009-034-A Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss

W5SM-JYKY

Abstract: LBW5SM LTW5SM
Contextual Info: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 412 mW (tief blau); 25 lm (blau); 81 lm (true grün) bei 350 mA und bis

LD W5SN-1U2V-35

Abstract: Q65110A7901 bare die
Contextual Info: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 692 mW (tief blau); 45 lm (blau); 126 lm (true grün) bei 700 mA und

ltw5sm

Abstract: LD W5SM W5SM-JYKY-25
Contextual Info: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Vorläufige Daten für OS-PCN-2009-033-A/ Preliminary Data for OS-PCN-2009-033-A Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss

LTW5SN

Abstract: smd 2U 73 diode Q65110A9211
Contextual Info: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 692 mW (tief blau); 45 lm (blau); 126 lm (true grün) bei 700 mA und

LTW5SM

Abstract: W5SM-JYKY White LED silicone OSRAM Q65110A8417
Contextual Info: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 412 mW (tief blau); 25 lm (blau); 81 lm (true grün) bei 350 mA und bis

74HCT74N

Contextual Info: Revised January 1999 EMICQNDUCTGR tm MM74HCT74 Dual D-Type Flip-Flop with Preset and Clear General Description tected from dam age due to static discharge by internal diode clam ps to Vc c and ground. The M M 74H C T74 utilizes advanced silicon-gate CM OS

LTW5SM

Contextual Info: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Vorläufige Daten für OS-PCN-2009-033-A/ Preliminary Data for OS-PCN-2009-033-A Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss

Contextual Info: Revised February 1999 EMICONDUCTGRTM MM74HC4020 • MM74HC4040 14-Stage Binary Counter • 12-Stage Binary Counter General Description The M M 74H C 4020, M M 74H C 4040, are high speed binary ripple carry co unters. These counters are im plem ented uti­

Contextual Info: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM General Description The M M 74H C 245A 3-STATE bidirectional buffer utilizes advanced silicon-gate C M O S technology, and is intended for tw o-w ay asynchronous com m unication between data buses. It has high drive current outputs w hich enable high

2SK2543

Contextual Info: TOSHIBA 2SK2543 SILICON N CHANNEL MOS TYPE tt-MOSV SWITCHING REGULATOR APPLICATIONS 10 ±0.3 r Low Drain-Source ON Resistance : Rd S (ON) = 0.750 (Typ.) High Forward Transfer Admittance : |Yfs| = 7.0S (Typ.) Low Leakage Current : iDgg^lOO/^A (Max.) (V]}g = 500V)