JEDEC MO-153 AD Search Results

JEDEC MO-153

Abstract: MO-153-BD-1 MO-153BD-1
Contextual Info: Plastic Packages for Integrated Circuits Thin Shrink Small Outline Plastic Packages TSSOP M38.173 N INDEX AREA E 0.25(0.010) M E1 2 INCHES GAUGE PLANE -B1 38 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE (COMPLIANT TO JEDEC MO-153-BD-1 ISSUE F) B M SYMBOL

Contextual Info: February 1984 Revised February 1999 S E M I C O N D U C T O R TM MM74HCT00 Quad 2 Input NAND Gate General Description The M M 74H C T00 is a NAND gates fabricated using advanced silicon-gate C M OS technology w hich provides the inherent benefits of C M OS— low quiescent power and

Contextual Info: A S E M I R I C C O N H D U I L D C T O Revised February 1999 R TM MM74HC04 Hex Inverter are protected from dam age due to static discharge by inter­ nal diode clam ps to V qq and ground. General Description The M M 74H C 04 inverters utilize advanced silicon-gate

Contextual Info: S eptem ber 1983 Revised February 1999 E M IC O N D U C T G R T M MM74HC14 Hex Inverting Schmitt Trigger General Description Features The M M 74H C 14 utilizes advanced silicon-gate C M OS technology to achieve the low pow er dissipation and high noise im m unity of standard C M O S, as well as the capability

74HCT05

Contextual Info: Revised February 1999 S E M IC O N D U C T O R TM General Description The MM74HCT05 is a logic function fabricated by using advanced silicon-gate CMOS technology, which provides the inherent benefits of CMOS— low quiescent power and wide power supply range. The device is also input and out­

Contextual Info: Revised April 1999 E M I C Q N D U C T G R tm General Description Features The MM74HCT14 utilizes advanced silicon-gate CMOS technology to achieve the low power dissipation and high noise immunity of standard CMOS, as well as the capability to drive 10 LS-TTL loads.

burp

Abstract: 74HCT00
Contextual Info: Revised February 1999 EMICQNDUCTGR tm MM74HCT00 Quad 2 Input NAND Gate General Description The MM74HCT00 is a NAND gates fabricated using advanced silicon-gate CMOS technology which provides the inherent benefits of CMOS— low quiescent power and wide power supply range. This device is input and output

LBW5SM

Abstract: LTW5SM
Contextual Info: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 412 mW (tief blau); 25 lm (blau); 81 lm (true grün) bei 350 mA und bis

LD W5SN-1U2V-35

Abstract: Q65110A7901 bare die
Contextual Info: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 692 mW (tief blau); 45 lm (blau); 126 lm (true grün) bei 700 mA und

LTW5SM

Abstract: W5SM-JYKY White LED silicone OSRAM Q65110A8417
Contextual Info: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 412 mW (tief blau); 25 lm (blau); 81 lm (true grün) bei 350 mA und bis

74HCT74N

Contextual Info: Revised January 1999 EMICQNDUCTGR tm MM74HCT74 Dual D-Type Flip-Flop with Preset and Clear General Description tected from dam age due to static discharge by internal diode clam ps to Vc c and ground. The M M 74H C T74 utilizes advanced silicon-gate CM OS

LTW5SM

Contextual Info: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Vorläufige Daten für OS-PCN-2009-033-A/ Preliminary Data for OS-PCN-2009-033-A Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss

Contextual Info: Revised February 1999 EMICONDUCTGRTM MM74HC4020 • MM74HC4040 14-Stage Binary Counter • 12-Stage Binary Counter General Description The M M 74H C 4020, M M 74H C 4040, are high speed binary ripple carry co unters. These counters are im plem ented uti­

Contextual Info: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM General Description The M M 74H C 245A 3-STATE bidirectional buffer utilizes advanced silicon-gate C M O S technology, and is intended for tw o-w ay asynchronous com m unication between data buses. It has high drive current outputs w hich enable high

Contextual Info: S E M I C O N D U C T O R Revised M arch 1999 TM 74LCX11 Low Voltage Triple 3-Input AND Gate with 5V Tolerant Inputs General Description Features The LCX11 is a triple 3-input AND gate w ith buffered o ut­ puts. LCX devices are designed fo r low voltage 2.5V or

74HCT08A

Contextual Info: December 1983 Revised February 1999 SEMICONDUCTOR TM General Description The MM74HCT08 is a logic function fabricated by using advanced silicon-gate CMOS technology which provides the inherent benefits of CMOS— low quiescent power and wide power supply range. This device is input and output

d-215 diode

Abstract: esm 856
Contextual Info: CALIFORNIA MICRO DEVICES ►►►►► PAC DN010 P/ACTIVE SCH O TTKY DIODE MEMORY BUS TERM INATOR Features A pplications • • ♦ • • • • Provides proper bus te rm in a tio n independent o f card loading conditions Schottky diode technology; fast tu rn on

E1005

Abstract: A1005 ic a1005 TLYE1005
Contextual Info: TOSHIBA TLG1005, TLGD1005, TLPG1005, TLOE1005, TLYE1005, TLS1005, TLRA1005 LED Surface Mount Device Unit in m m POLARITY J Features M °2 • 2 mm Thrust Out Domed Lens • 3.2 L x 2.4(W) x 2.5(H) mm Size - High Efficiency SMD Lamps - Realizing over 5 tim es Luminous than TL*1002 Series

Contextual Info: MECHANICAL DATA MPDS019A – JANUARY 1997 DBT R-PDSO-G* PLASTIC SMALL-OUTLINE PACKAGE 30 PIN SHOWN 0,50 0,27 0,17 30 16 0,08 M 0,15 NOM 4,50 4,30 6,60 6,20 Gage Plane 0,25 1 15 0°– 8° 0,75 0,50 A Seating Plane 1,20 MAX 0,05 MIN PINS * 0,10 30 38 44

20-PIN

Contextual Info: MECHANICAL DATA MPDS033 – JANUARY 1998 PWD R-PDSO-G* PowerPAD PLASTIC SMALL-OUTLINE PACKAGE 20-PIN SHOWN 0,30 0,19 0,65 20 0,10 M 11 Thermal Pad (See Note D) 4,50 4,30 0,15 NOM 6,60 6,20 Gage Plane 1 10 0,25 A 0°– 8° 0,75 0,50 Seating Plane 0,15

Nippon capacitors

Contextual Info: HB56D473EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-725A Z Rev. 1.0 Feb. 27, 1997 Description The HB56D473EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: Revised February 1999 S E M I C O N D U C T O R TM MM74HCT540 • MM74HCT541 Inverting Octal 3-STATE Buffer • Octal 3-STATE Buffer General Description The M M 74H C T540 and M M74HCT541 3-STATE buffers utilize advanced silicon-gate C M O S technology and are

RRN2

Contextual Info: NLSF2500 Product Preview Keypad Multiplexer The NLSF2500 is a keyboard multiplexer fabricated in sub−micron silicon CMOS Technology. The NLSF2500 is designed to operate over wide operating voltage, with minimum power consumption and very low voltage drop from VCC. The device saves dozens of active

solder paste alpha WS609

Abstract: WS609 Alpha WS609 solder cc fuji TSSOP YAMAICHI SOCKET Alpha WS609 dell monitor circuit diagram MO-194 scba009c reflow profile
Contextual Info: Thin Very Small-Outline Package TVSOP SCBA009C March 1997 1 IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest