JEDEC MO-153 38 Search Results

JEDEC MO-153

Abstract: MO-153-BD-1 MO-153BD-1
Contextual Info: Plastic Packages for Integrated Circuits Thin Shrink Small Outline Plastic Packages TSSOP M38.173 N INDEX AREA E 0.25(0.010) M E1 2 INCHES GAUGE PLANE -B1 38 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE (COMPLIANT TO JEDEC MO-153-BD-1 ISSUE F) B M SYMBOL

Contextual Info: MECHANICAL DATA MPDS019A – JANUARY 1997 DBT R-PDSO-G* PLASTIC SMALL-OUTLINE PACKAGE 30 PIN SHOWN 0,50 0,27 0,17 30 16 0,08 M 0,15 NOM 4,50 4,30 6,60 6,20 Gage Plane 0,25 1 15 0°– 8° 0,75 0,50 A Seating Plane 1,20 MAX 0,05 MIN PINS * 0,10 30 38 44

Contextual Info: Revised February 1999 EMICONDUCTGRTM MM74HC4020 • MM74HC4040 14-Stage Binary Counter • 12-Stage Binary Counter General Description The M M 74H C 4020, M M 74H C 4040, are high speed binary ripple carry co unters. These counters are im plem ented uti­

405C

Abstract: NLAS3699 NLAS3699MN1R2G STG3699
Contextual Info: NLAS3699 Dual DPDT Ultra−Low RON Switch The NLAS3699 is a dual independent ultra−low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699 can handle a balanced

405C

Abstract: NLAS3699B NLAS3699BMN1R2G STG3699
Contextual Info: NLAS3699B Dual DPDT Ultra−Low RON Switch The NLAS3699B is a dual independent ultra−low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699B can handle a

NLAS

Abstract: 405C MAX4783 NLAS4783 NLAS4783MN1R2G
Contextual Info: NLAS4783 Triple SPDT 1.0 W RON Switch The NLAS4783 is a triple independent ultra−low RON SPDT analog switch with ENABLE. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS4783

4783

Abstract: 405C MAX4783 NLAS4783B NLAS4783BMN1R2G jedec package MO-220 QFN 20
Contextual Info: NLAS4783B Triple SPDT 1.0 W RON Switch The NLAS4783B is a triple independent low RON SPDT analog switch with ENABLE. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS4783B

Contextual Info: KMM37 2 V 4 0 0 B K D R A M Mo d u l e ELECTRO NICS KMM372V400BK/BS / KMM372V41OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The

ph 41 zener diode

Contextual Info: S E M T R O N INDUSTRIES LTD i 3E 1> • S137SS1 000016M 4 B S L C B T ~ O T > - n IN3379-IN3883 s e r i e s Fast Recovery Rectifier 6 Amp Silicon Diode FEATURES METAL D04 ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current ■ Normal and reverse polarity

Nippon capacitors

Contextual Info: HB56D473EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-725A Z Rev. 1.0 Feb. 27, 1997 Description The HB56D473EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: Revised February 1999 S E M I C O N D U C T O R TM MM74HCT540 • MM74HCT541 Inverting Octal 3-STATE Buffer • Octal 3-STATE Buffer General Description The M M 74H C T540 and M M74HCT541 3-STATE buffers utilize advanced silicon-gate C M O S technology and are

solder paste alpha WS609

Abstract: WS609 Alpha WS609 solder cc fuji TSSOP YAMAICHI SOCKET Alpha WS609 dell monitor circuit diagram MO-194 scba009c reflow profile
Contextual Info: Thin Very Small-Outline Package TVSOP SCBA009C March 1997 1 IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest

jrc 1458

Abstract: ST72124J ST72C334N2 ST72C314N2 ST72C334N4 ST72C314J4 ST72C ST72C314N4 ST72C314J2 ST72C124J2
Contextual Info: ST72334J/N, ST72314J/N, ST72124J 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, 16-BIT TIMERS, SPI, SCI INTERFACES • ■ ■ ■ ■ ■ Memories – 8K or 16K Program memory ROM or single voltage FLASH with read-out protection and in-situ programming (remote ISP)

solder paste alpha WS609

Abstract: ic51-0142 WS609 Alpha WS609 solder AHC244 AKXXX TSSOP YAMAICHI SOCKET MO-194 MO-194AF 194-AA
Contextual Info: Thin Very Small-Outline Package TVSOP SCBA009D February 2001 1 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest

ICF CP 1005

Abstract: 1136 jrc DIP20 QFN20 SO20 ST7LITE10B ST7LITE15B ST7LITE19B diode 4003 smd diode
Contextual Info: ST7LITE1xB 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI Memories – up to 4 Kbytes single voltage extended Flash XFlash Program memory with read-out protection, In-Circuit Programming and In-Application programming (ICP and IAP). 10K write/

h54y

Contextual Info: PM7350 S/UNI-DUPLEX RELEASED DATA SHEET DUAL SERIAL LINK PHY MULTIPLEXER PM ISSUE 7 09 :4 7: 38 PMC-1980581 ,2 00 5 PM7350 TM 9M ay S/UNI- nd ay ,0 DUPLEX of ag er rt on Mo S/UNI-DUPLEX Do wn lo ad ed by sa tis h d DUAL SERIAL LINK, PHY MULTIPLEXER DATA SHEET

Contextual Info: 4, 8 MEG X 72 SDRAM DIMMs MT5LSDT472A, MT5LSDT872A SYNCHRONOUS DRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.m icron.com /m ti/m sp/htm l/datasheet.htm i FEATURES PIN ASSIGNMENT Front View • PC66-*, PC100- and PC133-compliant

Contextual Info: International I R Rectifier Data Sheet No. PD-6.036D IR2127 CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

GTLP16612A

Abstract: GTLP16612AA
Contextual Info: GTLP16612A

GTLP16612A

Abstract: GTLP16612AA 18bit TTL
Contextual Info: GTLP16612A

cn/A/U 237 BG

Contextual Info: P4SMA6V8. P4SMA540A P4SMA6V8C. P4SMA260CA 400 W Surface Mount Transient Voltage Suppressor Voltage 6.8 V to 540 V Uni 6.8 V to 260 V (Bid) DO-214AC (SMA) Power 400 W /ms (300W above 250 V) R FEATURES • Low profile package • Ideal for automated placement

cn/A/U 237 BG

Contextual Info: P4SMA6V8. P4SMA540A P4SMA6V8C. P4SMA260CA 400 W Surface Mount Transient Voltage Suppressor DO-214AC SMA Voltage Power 6.8 V to 540 V (Uni) 6.8 V to 260 V (Bid) 400 W /ms (300W above 250 V) R FEATURES • Low profile package • Ideal for automated placement

Contextual Info: HB56D473EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-725A Z Rev. 1.0 Feb. 27, 1997 Description The HB56D473EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: A D VA N CE 16, 32 MEG X 72 SDRAM DIMMs MICRON' I TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT9LSDT1672A, MT18LSDT3272A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • PC133- and PCIOO-compliant