JEDEC HTRB Search Results

SEC540

Contextual Info: AOS Semiconductor Product Reliability Report AO3435/AO3435L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AO3435. Accelerated

FSTJ9055R4

Abstract: 2E12 FSTJ9055D FSTJ9055D1 FSTJ9055D3 FSTJ9055R
Contextual Info: FSTJ9055D, FSTJ9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

AO4800B

Contextual Info: AOS Semiconductor Product Reliability Report AO4800B/AO4800BL, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Oct 15, 2007 1 This AOS product reliability report summarizes the qualification result for AO4800B. Accelerated

2E12

Abstract: FSL13A0D FSL13A0D1 FSL13A0D3 FSL13A0R FSL13A0R1 FSL13A0R3
Contextual Info: FSL13A0D, FSL13A0R Data Sheet 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

HTGB

Contextual Info: AOS Semiconductor Product Reliability Report AO3404/AO3404L, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Feb 16, 2006 1 This AOS product reliability report summarizes the qualification result for AO3404. Accelerated

AO3404AL

Contextual Info: AOS Semiconductor Product Reliability Report AO3404A/AO3404AL, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com May 28, 2008 1 This AOS product reliability report summarizes the qualification result for AO3404A. Accelerated

1E14

Abstract: 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
Contextual Info: FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs December 2000 • 34A, 250V, rDS ON = 0.080Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

2E12

Abstract: 3E12 FSYC360D FSYC360D1 FSYC360R FSYC360R3 FSYC360R4 PT2113
Contextual Info: FSYC360D, FSYC360R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Title SYC 0D, YC 0R bt adian rded, GR sist Cha el wer OSTs) utho eyrds terrpoon, minctor, dian rded, GR sist The Discrete Products Operation of Intersil Corporation has

1E14

Abstract: 2E12 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3
Contextual Info: FSYE23A0D, FSYE23A0R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

smd diode 39a

Abstract: smd 39a FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3 2E12 FSYA150D
Contextual Info: FSYA150D, FSYA150R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1E14

Abstract: 2E12 FSPYC164D1 FSPYC164R3
Contextual Info: FSPYC164R, FSPYC164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

1E14

Abstract: 2E12 FSPYE234D1 FSPYE234F FSPYE234R FSPYE234R3
Contextual Info: FSPYE234R, FSPYE234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

Contextual Info: DATE CHECKED Jan./26/’10 REVISIONS CHECKED Jan./26/’10 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Systems Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes