JE 701 Search Results

mh7493

Abstract: MA0403A maa 502 MH1SS1 Katalog tesla diod MH7442 MH7404 MA0403 MAA723 MH74S74
Contextual Info: POLOVODICOVÉ S O U C Á S T K Y PftEDPIS PRO P Ä JEN l Polovodicove soucdstky Jsou velml choulostlvd na nadmernS otepleni. Proto, aby nedochazelo k je jich poskozeni, do p o ruiuje se zachovat tento postup pfl pd jenf: Konce pnvodii je nutno predem ocinovat v delce 4 - 5

JE801

Abstract: JE700 transistor H 802 y 803
Contextual Info: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 b= -1 -5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic

702 y TRANSISTOR

Abstract: JE701 JE700 702 P TRANSISTOR je 701
Contextual Info: r n r e n i maiml MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic

VEB mikroelektronik

Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Contextual Info: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

MCRW10A

Abstract: MCRW12A MCRW15A EIA-296-E TR12-500
Contextual Info: Bussmann' The Power to P ro je ct” Subm iniature Through Hole COOPER Bussmann MCRW Sériés, Fast Acting, Wire-in-Air Description • AxiaS Leaded • Fast Acting, Wire-irvAir Design •Tm-iead Plated Copper Lead Wires • High Temperature Epoxy Plastic Body, UL 94 VO

2SC4667

Contextual Info: TOSHIBA 2SC4667 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4667 ULTRA HIGH SPEED SWITCHING APPLICATIONS. COM PUTER, COUNTER APPLICATIO N S. U n it in mm • H igh Transition Frequency : fx = 400MHz (Typ.) • Low Satu ration Voltage : V ç je (sat) = 0.3 V (M ax.)

Contextual Info: B u m jE R PROGRAM GUARANTED CONTINUOUS PROCESS IMPROVEMENT is at the heart of Mini-Circuits Partner Program Your long term business allows us to invest in improved production procedures. As a result, we can continually improve quality, shorten delivery tim es and low er the costs of production.

1413E

Abstract: BA4C 74F158ADP
Contextual Info: I t.E4ciô27 00 1413E 7 I MITSUBISHI ADVANCED SCHOTTKY TTL M 74F158A P /FP /D P je«* ; MITSUBISHI ÍDGTL LOGICï 07E D Ÿ fl® : Sot"ev QUADRUPLE 2-LIN E TO 1-LINE DATA SELECTOR/MULTIPLEXER INVERTED T- DESCRIi ¡ON The M74F158AP is a semiconductor integrated circuit

Contextual Info: DRAWING HA DC IN THIRD AN6LE PR O JE C TIO N _ _ THIS DRAWING 15 UNPUBLISHED. I RELEASED FOR PUBLICATION B Y AMP INCO R PO R ATED . A L L IN T E R N A T IO N A L 2 C O P Y R IG H T 13 LOC AF

Contextual Info: FEA TU RES ^ CC • 100-1000 MHz ■ 12 mA, +5 VDC ■ 1 dB LSB, 31 dB Range 5 BI T MODEL NO. DA0660 . p j^ p |o je 5 Section Attenuator For 2 dB LSB, 62 dB Range, Order DA0661 ■ TTL Control ■ 24 Pin DIP RF IN/OUT 24 OND 23 -► QND

JXXX

Contextual Info: MITSUBISHI LSIs e MH64S72QJA -7,-8 e°- 4,831,838,208-BIT 67,108,864-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY S o m e o f c o n te n ts are s u b je c t to c h a n g e w ith o u t n o tice . DESCRIPTION The MH64S72QJA is 67108864 - word x 72-bit

Contextual Info: Tem ic SÌ6436DQ Semiconductors N-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) r DS(on) (£2) 30 0.045 @ VGs = 10 V 0.070 @ VGS = 4.5 V I d (A) ±4.4 ±3.5 TSSOP-8 Dd S [T sd G IT • SÌ6436DQ ~H D T ]S TI S T ]d O- G JE * Source Pins 2, 3, 6 and 7

excsl3225

Abstract: efch SL4532 ENF vco ENF, VCO Voltage Controlled Oscillator, ENF v330 ECU for IFV V068 5SJ6
Contextual Info: i m G e n e ra l Electronic C om ponents Q u ick R e fe re n c e ^ fcfcfmm Dimensions{mm) '> ’J - x ^ pn Appearance Products ad ^ Code Series ERJ n s @ je & tt Thick Film Resistors m £ 9 £ Jfi i 1 t 0.35 • 1/16 W 70°C )10 Q - 1 .0 M Q 3G 1.6 0.8 0.45

Contextual Info: DRAW ING N o .: M 701 - 2 4 0 4 4 2 IF IN D O U B T - ASK NOT TO SC ALE T H IR D A N G LE P R O JE C T IO N A LL D IM E N S IO N S IN mm 2 -0 2 .3 4 -0 0 .9 5 CD X 4.15 -C-0 5 , LS v_y U r~h2 ~t- TO LER A N C ES X .X = + 0 .2 0 m m X .X X = ± 0 .1 O m m

nec v33

Abstract: nec v30 PD70136 UPD70116 V30 microprocessor 4 bit by bit 4 multiplication IC PGA-68 uPD70136 DAT16 uPD70136L-16
Contextual Info: \T I< C m ^i w //P D 7 0 1 3 6 V 3 3 16-B it, High-Speed CMOS Microprocessor *• ^ NEC Electronics Inc. Description Th e /aPD 70136 (V33 ) is a high-speed C M O S 16-bit m icroprocessor th a t is o b je c t a n d source co de c o m p a t­ ible w ith th e itP D 70116 (V30 ). P erfo rm a n ce is four tim es

Contextual Info: ADVANCE MICRON1 16 M EGx64 I SDRAM SODIMM MT8LSDT1664H SMALL-OUTLINE SDRAM MODULE F o r the late st data sheet revisions, plea se re fe r to the Micron Web säe: www.micron.com/mìi/mep/hìml/iialaetìeel.bìmt FEATURES PIN ASSIGNMENT Front View • JE D E C -sta n d a rd 1 4 4-pin, sm a ll-o u tlin e, d u a l in -lin e

4556a

Abstract: ta 2132 p 3404a f 4558 m m 4558 022B 072B 082B OP-07 7093A
Contextual Info: E t; ili p « se n o fa s u m ti Bipo lar i I 0 & A ‘J- — IS ffl 741) _i^i f it Si OP-07) 31 318) •s - f ë - lU S * 4250, -Í& m 5534) ïr 2130) 2107) -2 A * ititi I - » iS iA « — 2 ® Ï# A ‘J- — m m H S fë K ffi* -JE iâ S (2120, 2121)

16-02-0078

Abstract: S7002
Contextual Info: 7002 7002 JE • 025 c 0.64 ' LEAD FREE UC P2 004 - 1769 RWHITE 0 4 / 0 3 / 1 2 REVISED ECR * U 8 0 2 70 MCGRATH 9 7 / 0 7 / 3 1 NO TES: L T E R MI NA L FOR US E WITH HOUSING P A R T NO. 70066-* 2. M A T E R I A L : . 0 0 8 / ( 0 . 2 0 ) THK. PHOSPHOR BRONZE.

Contextual Info: ADVANCE M ir a n M ' I 16,32 MEG x 32 SDRAM DIMMs SYNCHRONOUS IW I IW I f I I I For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html IVI FEATURES PIN ASSIGNMENT Front View • JE D E C p in o u t in a 1 0 0 -pin, d u al in -lin e m e m o ry

Contextual Info: D E V E LO P M E N T D ATA TEA1064A T h is d a ta sheet co n ta in s advance in fo r m a tio n and s p e c ific a tio n s are su b je c t to change w it h o u t n o tic e . - A _ LOW VOLTAGE VERSATILE TELEPHONE TRANSMISSION CIRCUIT WITH DIALLER INTERFACE AND

16-02-0110

Abstract: S7002 UCP2004-I769
Contextual Info: 7002 7002 JE • 025 c 0.64 ' LEAD FREE U C P 2 0 0 4 - 1769 RWHITE 0 4 / 0 3 / 1 5 REVISED PER ECR * U 8 0 2 70 MCGRATH 9 7 / 0 7 / 3 1 REVISED PER ECR *U7 09 28 MCGRATH 9 7 / 0 6 / 2 6 NO TES: L T E R MI NA L FOR US E WITH HOUSING P A R T NO. 70066-*

ST 9509

Abstract: AD 928
Contextual Info: g -P XH é#^co c» r. o 7002 7 00 2 JE ~T L ^25 t 0.64)' LEAD FREE U C P 2 0 0 4 - 1769 RWHITE 0 4 / 0 3 / 1 5 REVISED PER ECR #U8 02 70 MCGRA7H 9 7 / 0 7 / 3 1 NOTES: L TERMINAL FOR 2. M A T E R I A L : . 0 0 8 / ( 0 . 2 0 ) THK. P H OS P HO R 3. TERMINAL

Contextual Info: ADVANCE 16, 32 MEG x 72 REGISTERED SDRAM DIMM SYNCHRONOUS DRAM MODULE MT18LSDT1672J, MT18LSDT3272J F o r the latest data sheet, please refe r to the M icron Web site: w ww.m icron c o tn /fn it/tm p /M m i'd s tm h m l.h & P l FEATURES PIN ASSIGNM ENT • JE D E C -sta n d a rd 2 0 0 -p in , dual in -lin e m em o ry