JDQ12 Search Results

Contextual Info: KM416C256D, KM416V256D CMOS DRAM 2 5 6 K x 16 Bit C M O S Dynamic RA M with Fast Page Mode DESCRIPTION This is a family of 262.144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage -*-5.0V or +3.3V , access time

Contextual Info: Rev. 1.0 ' MITSUBISHI LS Is M5M416165DJ,TP-5,-6,-7,-5S,-6S,-7S EDO H Y PE R P A G E MODE 16777216-BIT ( 1048576-WQRD BY 16-BIT ) DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS with EDO(Extended Data O u t: Hyper Page) mode

Contextual Info: Ordering number : EN5055 _ CMO _ LC382161T-17 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x

JDQ12

Contextual Info: OKI Semiconductor p r e l im in a r y M S M 5 4 1 6 1 2 8 131,072 Words x 16 Bits BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416128 is a high speed 128KX16 configuration burst access memory for mass storage applications. In addition to the burst mode, the MSM5416128 has conventional DRAM mode which

M5M4V18165

Abstract: M5M4V18165DJ M5M4V18165D
Contextual Info: Rev. 1.0 MITSUBISHI LS Is M5M4V18165DJ,TP-5,-6,-7,-5S,-6S,-7S EDO HYPER PAGE MODE 16777216-BIT ( 1048576-WORD BY 16-BIT ) DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS with EDO(Extended Data O u t: Hyper Page) mode function, fabricated with the high performance CMOS

m5m418165dj

Contextual Info: Rev. 1.0 ' MITSUBISHI LS Is M5M418165DJ,TP-5,-6,-7,-5S,-6S,-7S EDO H Y PE R PAG E MODE 16777216-BIT ( 1048576-WQRD BY 16-BIT ) DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS with EDO(Extended Data O u t: Hyper Page) mode