JDM 11 Search Results

3w3p

Abstract: CL21
Contextual Info: JDM TYPE COAXIAL TERMINAL CONNECTORS General The JDM Series are unitized connectors with a shell that is the same size as those of the SM Series. These connectors have a coaxial terminal mounting hole. The coaxial terminal is com patible with a wide range of

Contextual Info: R FB -1113-1W S P E C IF IC A T IO N S : DESCRIPTION REV IMPEDANCE: 5 0 OHMS WORKING VOLTAGE: 5 0 0 VRMS @ SEA LEVEL FREQUENCY RANGE: 0 - 1 GHz - DWN DATE JDM 6 /1 9 /9 5 ENGINEERING RELEASE APPROVED JDMc .162 [4.113 471 [11.953 .614 [15.603 .130 [3.3 03 0 .0 7 9 [02.013 x 2

Contextual Info: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO RF INDUSTRIES, ANY UNAUTHORIZED USE OF THIS DRAWING IS EXPRESSLY PROHIBITED WITHOUT WRITTEN PERMISSION FROM RF INDUSTRIES. ANY VIOLATION IS PUNISHABLE UNDER U.S. COPYRIGHT LAWS. RFB-1124-1P paptno DESCRIPTION

DAC701

Abstract: DAC70 DAC702 DAC703 DAC71 DAC72 BB3584
Contextual Info: DAC701 DAC702 DAC703 DAC 701 DAC 702 DAC 703 Monolithic 16-Bit DIGITAL-TO-ANALOG CONVERTERS FEATURES ● VOUT AND IOUT MODELS ● HIGH ACCURACY: Linearity Error ±0.0015% of FSR max Differential Linearity Error ±0.003% of FSR max ● MONOTONIC at 15 bits OVER FULL

180k 1w chip resistor

Abstract: DAC71 DAC701LH DAC70 DAC701 DAC702 DAC703 DAC72 BB3584 703 op amp
Contextual Info: DAC701 DAC702 DAC703 DAC 701 DAC 702 DAC 703 Monolithic 16-Bit DIGITAL-TO-ANALOG CONVERTERS FEATURES ● VOUT AND IOUT MODELS ● HIGH ACCURACY: Linearity Error ±0.0015% of FSR max Differential Linearity Error ±0.003% of FSR max ● MONOTONIC at 15 bits OVER FULL

Contextual Info: R FB-1116-N G -03 THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO RF INDUSTRIES. ANY UNAUTHORIZED USE OF THIS DRAWING IS EXPRESSLY PROHIBITED WITHOUT WRITTEN PERMISSION FROM RF INDUSTRIES. ANY VIOLATION IS PUNISHABLE UNDER U.S. COPYRIGHT LAWS. DESCRIPTION

Contextual Info: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO RF INDUSTRIES, ANY UNAUTHORIZED USE OF THIS DRAWING IS EXPRESSLY PROHIBITED WITHOUT WRITTEN PERMISSION FROM RF INDUSTRIES. ANY VIOLATION IS PUNISHABLE UNDER U .S. COPYRIGHT LAWS. p« R F B -1 7 0 7 -S , no D ESC R IP T IO N

Contextual Info: PART NO. THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO RF INDUSTRIES, ANY UNAUTHORIZED USE OF THIS DRAWING IS EXPRESSLY PROHIBITED WITHOUT WRITTEN PERMISSION FROM RF INDUSTRIES. ANY VIOLATION IS PUNISHABLE UNDER U.S. COPYRIGHT LAWS. RFB-1 716 DESCRIPTION

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS 'HFG/NVDQ2HMFKD$LHSSDQ#HNCD+@RDQR …L ML 6 JDL-BAE-090-940-TE-12-4.0 Features: Applications: m High laser power m /TLOHMFNERNKHC RS@SDK@RDQR@MCÆADQK@RDQR

c5801

Contextual Info: R S B -221-1-179 THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO RF INDUSTRIES, ANY UNAUTHORIZED USE OF THIS DRAWING IS EXPRESSLY PROHIBITED WITHOUT WRITTEN PERMISSION FROM RF INDUSTRIES. ANY VIOLATION IS PUNISHABLE UNDER U.S. COPYRIGHT LAWS. - DATE OWN DESCRIPTION

Contextual Info: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO RF INDUSTRIES, ANY UNAUTHORIZED USE OF THIS DRAWING IS EXPRESSLY PROHIBITED WITHOUT WRITTEN PERMISSION FROM RF INDUSTRIES. ANY VIOLATION IS PUNISHABLE UNDER U .S. COPYRIGHT LAWS. R F B -1724-Q p« t m o DESCRIPTION

Contextual Info: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO RF INDUSTRIES, ANY UNAUTHORIZED USE OF THIS DRAWING IS EXPRESSLY PROHIBITED WITHOUT WRITTEN PERMISSION FROM RF INDUSTRIES. ANY VIOLATION IS PUNISHABLE UNDER U.S. COPYRIGHT LAWS. R F D -1 6 0 4 -2 L 2 p« t m o

Contextual Info: p» THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO RF INDUSTRIES, ANY UNAUTHORIZED USE OF THIS DRAWING IS EXPRESSLY PROHIBITED WITHOUT WRITTEN PERMISSION FROM RF INDUSTRIES. ANY VIOLATION IS PUNISHABLE UNDER U.S. COPYRIGHT LAWS. , RFD-1631-2L2 no. DWN DATE

RCA IC13

Abstract: AT-900 RD 24 105 RP DF1E
Contextual Info: Index Series Name 1300 1600 3100 3200 3500 3CV A1 A2 A3 A3E A4 AT-100,200,300 AT-400,500,600 AT-800 AT-900 AT-1000,1100 AT-1200,1300 AT-1400 BNC BNC-TM BWA C/D CB1 CD CR6 CR7 CR22 CR23 CTF CTH DF1 DF1B DF1E DF2 DF3 DF4 DF5 DF6 DF7 DF9 DF11 DF12 DF13 DF14 DF15

g23 SMD Transistor

Abstract: smd marking JD SMJ44400
Contextual Info: DRAM SMJ44400 Austin Semiconductor, Inc. 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3

smd marking g23

Abstract: 5962-9084703MXA smd marking JD JD smd RAS 0910 g23 SMD Transistor marking g23 SMD SMJ44400 jdm 11
Contextual Info: DRAM SMJ44400 Austin Semiconductor, Inc. 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3

SMJ44400

Abstract: smd marking JD 5962-9084703MXA
Contextual Info: DRAM SMJ44400 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3 Vcc FEATURES • Organized 1,048,576 x 4

SMD Transistor g25

Abstract: smd marking JD 21D0 g23 SMD Transistor SMJ44400
Contextual Info: DRAM SMJ44400 Austin Semiconductor, Inc. 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3 Vcc • SMD 5962-90847 • MIL-STD-883 FEATURES • Organized 1,048,576 x 4

buz45

Contextual Info: PowerMOS transistor_BUZ45 N AMER PHILIPS/DISCRETE QbE J> M tbS3T31 0014b47 T • _ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

Contextual Info: 3ÜE D • 0030100 7 ■ SCS-THOMSON s 6 S' TH0Í,S0N IIL ir a M lO ! S T V H D 90 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR P R E LIM IN A R Y DATA TYPE STVHD90 • • • • • • V qss 50 V ^DS on 0.023 ß Id 52 A VERY HIGH DENSITY VERY LOW RDS(on)

Contextual Info: I F S ilico n ix SÌ9944DY A M ember o f the T emic G roup Dual N-Channel Enhancement-Mode MOSFET Product Summary Vos V 240 r D S(on) Id (Q) (A) 6 @ V GS = 10 V ±0.4 ) V GS = 4.5 V ±0.3 D2 D2 u u Di Dj SO-8 Î1 o — IÍ W G2 Top View o Ô Si S2 N -Channel M OSFET

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53^31 0014731 T BUZ347 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: FREDERICK COMPONENTS V C POW ER M O SF E T s VD S I D 25TC 1 0 0 °C Rd A (V ) s W ) C IS S td m *D (o h m s) (P F ) (A ) (W ) P ackage IR F 1 2 0 IR F 1 2 2 IR F 1 2 3 IR F 1 3 0 IR F 1 3 1 IR F 1 3 2 IR F 1 3 3 IR F 1 4 0 IR F 1 4 1 IR F 1 4 2 IR F 1 4 3

triode rn 1016

Abstract: 2N1778A thyristor st 103
Contextual Info: Discrete Semiconductors C10 Series: 2N1770A-2N2619A Semitronics Phase Control SCR 4.7 Amps 125-600 Volts Description Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control