JD 16 Search Results

74LS631

Abstract: 74LS630 SN74LS630 54LS630 CB419 LS631
Contextual Info: TYPES SN54LS630, SN54LS631, SN74LS630, SN74LS631 16-BIT PARALLEL ERROR DETECTION AND CORRECTION CIRCUITS D2550, MARCH 1 9 8 0 -R E V IS E D APRIL 1985 TIM 99630, TIM 99631 Detects and Corrects Single-Bit Errors . . JD PACKAGE S N 54LS630, SN54LS631 JD OR N PACKAGE

Motorola transistors MJE3055

Abstract: Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit MJE2955 mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 2955 Com plem entary Power Transistors PNP M JD 3055 DPAK For Surface Mount Applications ‘ Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • •

Contextual Info: ELECTRIC DOUBLE LAYER CAPACITORS "EVerCAP " JD Screw Terminal Type, High Energy Density Type series JD High energy density. Suitable for electric power storage. Available for adapted to the RoHS directive 2002/95/EC . High Energy Density JC Specifications

10U60

Contextual Info: ELECTRIC DOUBLE LAYER CAPACITORS "EVerCAP " JD Screw Terminal Type, High Energy Density Type series JD High energy density. Suitable for electric power storage. Available for adapted to the RoHS directive 2002/95/EC . High Energy Density JC Specifications

200R7

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC CE ALL RIGHTS RESERVED. REVISIONS DIST 16 LTR DESCRIPTION REVISED PER 0A 40-0443-04 DATE DWN APVD 13SEP04 JD JD D 1. D IM E N S IO N S MAX OF 3. 55dB INSERTIO N

2N6034-2N6039

Abstract: buc ku 1N5825 369A-13 MJD6036 MJD6039 MSD6100 transistor 228 npn motorola
Contextual Info: MOTOROLA Order this document by MJ D6036/D SEMICONDUCTOR TECHNICAL DATA NPN M JD 6036 Com plem entary Darlington Power Transistors PNP M JD 6039 DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages

82S105A

Abstract: 82S104 82S104A
Contextual Info: De | TEXAS INSTR {ASIC/MEM0RY3- 70 FIELD PROGRAMMABLE LOGIC 0 ^ 1 7 5 5 _DD3flb33 82S104A, 82S105A 16 X 48 X 8 FIELD PROGRAMMABLE LOGIC SEQUENCER JA N U A R Y -1986 8 2S 1 0 4A , 82S105A M SUFFIX . . , JD PACKAGE C SUFFIX . . . JD OR N PACKAGE Programmable Asynchronous Preset or

80960JT

Abstract: 80960JA 80960JD 80960JF 273172
Contextual Info: 5 V 80960JA/JF/JD Processor Conversion to 3.3 V 80960JA/JF/JD/JT Processor White Paper June 1998 Order Number: 273172-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

80960JT

Abstract: 80960JA 80960JD 80960JF 273172
Contextual Info: 5 V 80960JA/JF/JD Processor Conversion to 3.3 V 80960JA/JF/JD/JT Processor White Paper August 1998 Order Number: 273172-003 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

Contextual Info: r Z 7 SGS-THOMSON Ä 7# M JD 4 4H 11 M JD 45 H 1 1 RfflDOlñ!<s [l[L[ie,ü’[KÍ@RDD S$ COMPLEMENTARY SILICON PNP TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . LOW COLLECTOR-EMITTER SATURATION VOLTAGE . FAST SWITCHING SPEED APPLICATIONS . GENERAL PURPOSE SWITCHING

Z69D

Abstract: C106 C110 R101 R102 R104 R105 R106 R107 NB15h
Contextual Info: PARALLEL PORT A EXPA2 I EXPA1 I EXPAO I EXPB2 I EXPB1 I EXPBO I —^ IENB —^ SYNCD —— SYNCC —— SYNCB — E15 SYNCA - C H IP JD 3 PBACK C H IP JD 2 PBREQ FU CH IPJD 1 F15 CHIP I DO PBCH1 |LBCLKIN PBCHO|LBCLKOUT oooooooooooooooo „ R101 < R 1 0 2

02n60

Abstract: JD127
Contextual Info: motorola sc x s t r s /r 12E D • I b3b7E54 GOflSSb? t f | 'T 1 3 3 - / 2 ? 7”-33-3/ MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 122 PNP M JD 127 Com plem entary Darlington Pow er Transistors DPAK For Surface M ount A pplications Designed for general purpose am plifier and low speed switching applications.

signetics 10115

Abstract: TIB82S105BC
Contextual Info: TIB82S105BM , TIB82S105BC 1 6 x 4 8 x 8 FIELD-PROGRAMMABLE LOGIC SEQUENCER WITH 3-STATE OUTPUTS OR PRESET D 2B 97, SEPTEMBER 1 9 8 5 -R E V IS E D DECEMBER 1 9 8 7 50 -M H z Clock Rate • Power-On Preset of All Flip-Flops M SUFFIX . . . JD PACKAGE C SUFFIX . . . JD OR N PACKAGE

Contextual Info: DS21T16 P R O D U C T P R E V IE W DALLAS SEMICONDUCTOR FEATURES • Fully compliant with SCSI-1, Fast SCSI and Ultra SCSI DS21T16 SCSI Term inator PIN A S S IG N M E N T TERMPWR1 an 1 20 JD PD HS-GND □n 2 19 nn VREF2 R1 ÜL 3 18 JD HS-GND R2 □n 4 NC • Provides active termination for nine signal lines

T2500M

Contextual Info: MOTOROLA SC XSTRS/R F 1 S E I D b 3 b 7 2 5 4 Q G Ö 5 E 5 / | t r - 3 3 -0 7 MOTOROLA S EM IC O N D U C T O R TECHNICAL DATA M JD 47 M JD 50 High V oltage Pow er Transistors D P A K For Surface M oun t A pp lication s N P N S IU C O N P O W E R T R A N S IS T O R S

44E3

Contextual Info: MOTOROLA Order this document by MJD44E3/D SEMICONDUCTOR TECHNICAL DATA M JD 44E3* Darlington Power Transistor ‘ Motorola Preferred Device DPAK For Surface Mount Application . . . for general purpose power and switching output or driver stages in applications

IN1016

Abstract: 80960HA 80960HD 80960HT 80960JA 80960JD 80960JF 80960JT PQFP 128 Fast Ethernet Risc
Contextual Info: i960 JA/JF/JD/JT Microprocessors PRODUCT HIGHLIGHTS • Low Power Modes ■ Improved cache design ■ State of the art testability ® ■ i960 processor compatible RISC core ■ 100 MIPS execution for the JT-100 ■ 16-Kbyte 2-way set associative instruction

so 54 t

Abstract: 401C 7334L2622F01LF
Contextual Info: 4 7334L2622F0LF a I oque L e a d E Fe e Vers N umb e r =• A O F1 G p t c0nf acf E 1a t n g 2 : 0 , 4 jd ITI G 0 1 d 5 : 2 . 0 jd m G 0 1 cl na ELECTRICAL In s u la tio n D i e l e c t r i c Current c a r Contact res Card sensor ar ea N 11 rn b e F 0 f c: 0 n f a c f 5

BAW74

Abstract: smd marking JD
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES BAW74 SOT-23 Formed SMD Package 3 Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking BAW74 - JD High-Speed Switching Dual Diodes, Common Anode

TAA 840

Contextual Info: gggffi'N. HIGH-SPEED BiCMOS ECL STATIC RAM 16K 16K x 1-BIT SRAM |jd £ / Integrated Device Technology, Inc. PRELIMINARY IDT10480 IDT100480 IDT101480 FEATURES: DESCRIPTION: • 16,384 x 1-bit organization • Address access time: 3/3.5/4/5/7/8/10/12/15 ns

JD4AB-T12

Abstract: 84084 JD3LB-P12 JD2BB-S07 JD1AB-125 JD1AB-704 JD2AB-S07 JD2AB-S08 JD2LB-S12 JD3EB-P10
Contextual Info: Cylindrical Style EMI Filters JD Series – .690 Dia. Hermetically Sealed – Circuits Available – C, L, π, T APPLICATIONS CHARACTERISTICS • Designed to meet the requirements of DESC drawings 84083, 84084 and MIL-F28861/16 and /17. • Glass hermetic seal on both

SMJ320E15

Abstract: SMJ27C64
Contextual Info: SMJ320 FIRST-GENERATION DIGITAL SIGNAL PROCESSORS SMJ32QC10, SMJ320C15 JD PACKAGE TOP VIEW • 160/200-ns Instruction Cycle • 144/256-Word On-Chip Data RAM • 1.5K/4K-Word On-Chip Program ROM • 4K-Word On-Chip Program EPROM (SMJ320E15) • EPROM Code Protection for

HF06130

Contextual Info: _ - .100" 2.54mm Center Header Low Friction Lock _ F ^ jD C D n n HF16-W0 Series Dimensioning: AH dimensions in inches and millimetres. Values in brackets are metric equivalents. Cherts contain dimensions in inches and mBümelfes.

Contextual Info: ELECTRIC DOUBLE LAYER CAPACITORS "EVerCAP " JD Screw Terminal Type, High Energy Density Type series High energy density. Suitable for electric power storage. Compliant to the RoHS directive 2002/95/EC . Specifications Item Performance Characteristics Category Temperature Range