JCA AMPLIFIER Search Results

JCA Technology

Abstract: jca amplifier JCA Technology jca-23 JCA Technology low noise amplifier RS032100 dc power connector JCA Technology JCA
Contextual Info: JCA Technology Products Ultra-Low Noise Telemetry Band Amplifier Go to New Focus web site! JCA Technology's Ultra-Low noise telemetry band amplifier is one of the many new products developed under the Discrete Amplifier Division. This division addresses components that are not practical to thin film technology or components that require

JCA Technology

Abstract: LA26-401 la1218 La4840 LA28-501 LA24-401 LA618-701 LA712-501 LA818-701
Contextual Info: JCA Technology Products Limiting Amplifiers Medium Band from 0.5 GHz to 18 GHz Go to New Focus web site! Features: ● Wide input dynamic range Compressed output range ● Fast pulse response in saturated mode ● Wideband coverage from 0.5GHz to 18GHz ●

JCA Technology

Abstract: JCA001-205 JCA003-201 JCA006-201 JCA001-203 JCA001-201 JCA001-202 JCA001-204 JCA002-201 JCA002-202
Contextual Info: JCA Technology Products Go to New Focus web site! 10 Mhz to 18 Ghz Ultra-Broadband Amplifiers for Fiber-Optic and Telecommunications Features: ● Ideal for Fiber-Optic, Telecommunications, and Test Equipment ● Drop-In Style Packages ● Multi-Octave Operation

JCA Technology low noise amplifier

Abstract: JCA Technology jca amplifier LA910-4000 x-band limiter X-band low noise amplifiers JCA Technology JCA x band radar x-Band High Power Amplifier x-band amplifiers
Contextual Info: JCA Technology Products 2 Watt X-Band Power Amplifier Go to New Focus web site! Features: ● ● High Reliability 2-Watts Linear Output Power ● Low Phase Noise Unconditionally Stable Competitively Priced ● Quick Delivery ● ● Model No - LA910-4000

JCA Technology

Abstract: 001-120 JCA0018-205 JCA007-205 JCA008-201 JCA0010-201 JCA0010-303 JCA0012-302 JCA0010-202 JCA007-201
Contextual Info: JCA Technology Products Go to New Focus web site! 10 Mhz to 18 Ghz Ultra-Broadband Amplifiers for Fiber-Optic and Telecommunications Features: ● Ideal for Fiber-Optic, Telecommunications, and Test Equipment ● Drop-In Style Packages ● Multi-Octave Operation

JCA Technology

Abstract: LA02-801 LA7121 LA26-801 jca amplifier la1218 LA24-801 LA618-1401 LA818-1401 LA1218-1401
Contextual Info: JCA Technology Products Limiting Amplifiers High Band from 0.5 GHz to 18 GHz Go to New Focus web site! Features: ● Wide input dynamic range Compressed output range Fast pulse response in saturated mode Wideband coverage from 0.5GHz to 18GHz ● Special package configuration to meet customer requirements

Transistor BFX 59

Abstract: BFX59F BFX59 kbr 1000 Q60206-X transistor BFX59 transistor w 04 59 Transistor BFX 4
Contextual Info: BFX 59 F NPN Transistor for driver and output stages in antenna amplifiers BFX 59 F is an epitaxial N P N silicon planar RF transistor in a case 18 A 4 D IN 41 876 TO-72 . The leads are electrically insulated from the case. B FX 59 F is suitable for use in low-power driver and output stages up to the U H F range, especially at a higher

BF 184 transistor

Abstract: BF457 bf459 IC 41 BF transistors 458
Contextual Info: BF 457 BF 458 SILICON P LA N A R NPIN BF 459 PRELIMINARY DATA HIGH VOLTAGE VIDEO AMPLIFIERS The BF: 457, BF 458 and BF 459 are silicon planar epitaxial NPN transistors in Jedec T O -1 26 plastic package. They are particularly intended fo r use as video o u tp u t stages in

Contextual Info: nil TetraFET Vrrr = mi D1006UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 2 0 W -2 8 V -1 7 5 M H z SINGLE ENDED FEATURES u • SIMPLIFIED AMPLIFIER DESIGN Q N K w O P • SUITABLE FOR BROAD BAND APPLICATIONS

BFR18

Abstract: jca amplifier
Contextual Info: BFR18 SILICON PLANAR NPN H IG H -VO LTA G E , H IG H -C U R R E N T A M PLIFIER The BFR 18 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. This device is designed for amplifier applications over a wide range of voltage and current.

Contextual Info: WJ-EA7 5 to 250 MHz TO-5 CASCADABLE AMPLIFIER ♦ HIGH OUTPUT LEVEL: +16 dBm TYP ♦ LOW OUTPUT VSWR: 1.5:1 (TYP) ♦ WIDE SUPPLY RANGE: 12 TO 15 VOLTS Specifications’1 Outline Drawings Guaranteed 0° to +50°C -54° to +85°C Typical Characteristics Frequency (Min.)

BFX48

Contextual Info: BFX48 SILICON PLANAR PNP H IGH-FREQUENCY AMPLIFIER The BFX 48 is a silicon planar epitaxial PNP transistor in Jedec T O -1 8 metal case. It is suitable fo r a wide range o f applications including lo w noise, low current high gain RF and wide band pulse am plifiers.

bd139

Abstract: M/triac bd139 bd135
Contextual Info: BD135 BD139 NPN SILICON TRANSISTORS • STMicraelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi

2N 930

Contextual Info: 2N 930 SILICON PLANAR NPN LOW-LEVEL, LOW-NOISE AMPLIFIER The 2N 9 3 0 is a silic o n planar e p ita x ia l NPN tra n sisto r in Jedec T O -1 8 m etal case, designed fo r use in high p e rfo rm a n ce , lo w -le v e l, lo w -n o is e a m p lifie r app lica tio n s.

Contextual Info: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in JedecT O -39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation

BDY90P

Abstract: electronic ballast schematic transistor bI 240
Contextual Info: BDY90P NPN SILICON POWER TRANSISTOR . LOW COLLECTOR EMITTER SATURATION VOLTAGE . FAST-SWITCHING SPEED APPLICATION . GENERAL PURPOSE SWITCHING APPLICATIONS . GENERAL PURPOSE AMPLIFIERS . DC CURRENT AND BATTERY OPERATED ELECTRONIC BALLAST DESCRIPTION The BDY90P is a silicon Multiepitaxial Planar

Transistor D 2494

Abstract: WJ-A80-1 JCA 812
Contextual Info: WJ-A80-1/SMA80-1 10 to 200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: >32 dB TYP. VERY LOW NOISE: 2.0 dB (TYP.) HIGH GAIN: 27.3 dB (TYP.) HIGH EFFICIENCY: 29 mA at 15 VOLTS (TYP.) Outline Drawings

Contextual Info: Æ T S G S - T H O M S O N B F W 43 n lsi S IIL[iCTISÎ iD©S HIGH VOLTAGE AMPLIFIER DESCRIPTION The BFW43 is a silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. It is designed for use in amplifiers where high voltage and high gain are necessary. In particular, its

bc141

Contextual Info: Æ T SG S-TH O M SO N D lsi S IIL[lCTIs! iD©S BC141 GENERAL PURPOSE TRANSISTORS DESCRIPTION The BC141 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for audio amplifiers and switching application up to 1A.

Contextual Info: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. INTERNAL SCHEMATIC DIAGRAM

bc177

Contextual Info: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BC177 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177 is a silicon planar epitaxial PNP transistors in TO-18 metal case. It is suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers.

Contextual Info: Æ T SGS-THOMSON n lsi S IIL[iCTIsî iD©S 2N4033 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N4033 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. INTERNAL SCHEMATIC DIAGRAM

L165

Abstract: operational amplifier l165
Contextual Info: rz7 ^ 7 # SCS-THOMSON s ¡L IO T @ [* S L165 3A POWER OPERATIONAL AMPLIFIER • OUTPUT CURRENT UP TO 3A ■ LARGE COM MON-MODE AND TIAL MODE RANGES ■ SOA PROTECTION ■ THERMAL PROTECTION ■ ± 18V SUPPLY DIFFEREN­ The L165 is a monolithic integrated circuit in Pentawatt package, intended for use as power ope­

WJ-A33

Contextual Info: WJ-A33-1 /SMA33-1 2 to 2400 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ ULTRAWIDE BANDWIDTH: 1 - 2600 MHz TYP. ♦ MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Outline Drawings Specifications* A 3 3 -1 0.200 [5.08) Guaranteed Typical Characteristics