JC 201 SC Search Results

MSS1P6HM3

Abstract: J-STD-002
Contextual Info: New Product MSS1P5, MSS1P6 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 0.65 mm eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency

J-STD-002

Abstract: MSS1P2L MicroSMP
Contextual Info: New Product MSS1P2L, MSS1P3L Vishay General Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 0.65 mm eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency

MSS1P6HM3

Contextual Info: New Product MSS1P5, MSS1P6 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 0.65 mm eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency

Contextual Info: SS3P3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses

Contextual Info: MSS1P5, MSS1P6 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 0.65 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses

SEMISOUTH

Abstract: SDP60S120D SemiSouth Laboratories sdp60s
Contextual Info: Silicon Carbide SDP60S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current

Contextual Info: New Product SS3P5, SS3P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses

Contextual Info: TENTATIVE DATA SHEET FSS22W.FSS220W 2.0 Amp. Surface Mount Schottky Barrier Rectifier Current 2.0 A Voltage 20 V to 200V FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: FS08.D STANDARD SCR On-State Current 8 Amp TO-252AA DPAK 2 0.5 mA to 15 mA Off-State Voltage 400 V ÷ 800V FEATURES • Glass/passivated die junctions • Medium current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

Contextual Info: TENTATIVE DATA SHEET FSS12W.FSS120W 1.0 Amp. Surface Mount Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 200V FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: FS1209.D STANDARD SCR On-State Current 12 Amp TO-252AA DPAK 2 2 mA to 15 mA Off-State Voltage 400 V ÷ 800V FEATURES • Glass/passivated die junctions • Medium current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

Contextual Info: FS1209.D STANDARD SCR On-State Current 12 Amp TO-252AA DPAK 2 2 mA to 15 mA Off-State Voltage 400 V ÷ 800V FEATURES • Glass/passivated die junctions • Medium current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

Contextual Info: V10D100C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: V10D120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: V30DL50C-M3, V30DL50CHM3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.29 V at IF = 5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: New Product V40100C, VI40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

DO-220AA

Abstract: J-STD-002
Contextual Info: New Product SS1P3, SS1P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses

2M4427

Abstract: TRANSISTOR 2SC 635
Contextual Info: 7 = 3 /- 2 3 MOTOROLA SC XSTRS/R F 4bE D b3b7ES4 00T404S <4 H I I O T b MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F Lin e 1 W - 175 MHz HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for amplifier, frequency multiplier, or oscillator

Contextual Info: VT2045C-M3, VIT2045C-M3, VT2045CHM3, VIT2045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: VT3045C-M3, VIT3045C-M3, VT3045CHM3, VIT3045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: VT6045C-M3, VIT6045C-M3, VT6045CHM3, VIT6045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product VT4060C, VIT4060C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses

Contextual Info: V30M120C, VI30M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product VT2080S, VIT2080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation