JB TRANSISTOR Search Results

Contextual Info: Philips Semiconductors bbS B 'JB l DDB lH fiS IfiS MAPX Product specification NPN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE T> PINNING NPN transistor in hermetically sealed sub-miniature SOU 73 and SOT173X micro-stripline envelopes.

Contextual Info: j Jb£.mL-L,onaiLetoi L/^ 10ducts. One 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1062 Silicon PNP Power Transistor a <x DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-120V(Min)

BFQ234

Abstract: BFQ254 UBB364 SOT-172A
Contextual Info: Philips Semiconductors L jb £ 3 ^ 3 1 0Q31714 b7fl BBAPX NPN 1 GHz video transistor Product specification BFQ234; BFQ234/I b'lE T> N Af1ER PHILIPS/DISCRETE DESCRIPTION PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and

100-C

Abstract: BFQ290 BFQ291
Contextual Info: PMlips_Semiconductors jB t a b S B 'I B l 0 0 3 1 7 fl5 T2fl IHAPX Pre,iminary specification NPN HDTV video transistor — — BFQ291 — N AMER PHILIPS/DISCRETE FEATURES t.'JE » PINNING • High breakdown voltages • Low output capacitance PIN 1 DESCRIPTION

CB404

Abstract: cb-406 CB-407 CB-303
Contextual Info: 200. 950 MHz UHF puise power transistors transistors pour applications puisées UHF TYPE PACKAGE' CONFIG. THOMSONCSF pIIM Frequency range W (MHz) Tp/5 Gp min (<JB) b s / %) 400-450 200-500 10 10 7,5 10 10/10 1000/10 60/2 250/10 Vcc Pout (V) (VIO 30 200-500

12v d.c. motor forward reverse diagram

Abstract: NJM2624 DMP16 DMP-16 NJM2624D NJM2624V SSOP16 SSOP-16 package dmp-16
Contextual Info: JB r A NJM2624 BRUSH LESS DC MOTOR PRE-DRIVER • GENERAL DESCRIPTION PACKAGE OUTLINE The NJM 2624 is a 3-phase brushless DC motor pre-driver which requies external power-transistors suited to drive current o f the motor. The Run Enable function is used as PW M control besides o f

2C5339

Abstract: 2C6193
Contextual Info: P P C PRODUCTS CORP SSE D ta jb lll OOOOÖ'iD T • ! 5-A NPN Power Transistor Chips 2C5339 • T -lV O S t CHIP TYPE: AL FEATURES • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector ■ Gold - 3,000 A Nominal

nd2410l

Contextual Info: ND2406L, ND2410L N-Channel Depletion-Mode MOS Transistors JBÜSKSS TO-92 TO-226AA PRODUCT SUMMARY T PART NUMBER V (BR)DSS ND2406L 240 6 0.23 ND2410L 240 10 0.18 BOTTOM VIEW >d (A) 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VDDV24 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

Contextual Info: isocon COnPONENTS LTD Jb • 7SC 4flflbSlQ DOOOlflB 17b • ISO D 3 SFH601 -1, SFH601 -2, SFH601 -3. SFH601-4, SFH601-5 OPTICALLY COUPLED ISOLATORS IS0C0Mf INC. 274 E. HAMILTON AVE. SUITE F CAMPBELL, CA. 95008 ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted

Contextual Info: I T h a l HEW LETT müHM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 Features • High Output Power: 20.5 dBm Typical Pi ¿b at 2.0 GHz • High Gain at 1 dB Compression: 13.5 dB Typical ,jb a t 2.0 GHz • Low N oise Figure:

5609

Abstract: 5609 transistor 2N6676 2N6677 2N6678 CCC6678
Contextual Info: 61 159 50 MICR OS EMI 02E 0 0 5 0 7 CORP/POWER T'33- 3 D DE jb llS ^ S O 0000507 5 | 05 CCC6678 TECHNOLOGY 15 A, 650 V, NPN Power Transistor Chip • E pitaxial D iffused, Glass Passivated ■ Contact M etallization: B ase and em itter-alum inum Collector (Al-Ti-Ni-Au

Contextual Info: _ bq2090 Q jB E N C H M A R Q Gas Gauge 1CWith SMBus-Uke Interface Features General Description >- Provides conservative and repeatable m easurem ent of available charge in NiCd, NiMH, and Lithium Ion rechargeable batteries The bq2090 G as G auge IC W ith

S0433

Abstract: transistor DAG
Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D □S0433Ö 00D3bS3 2 «ALGR T - 9 -ol P R O C E S S B JB Process BJB NPN High-Speed Switching Transistor Process BJB is a double-diffused epitaxial planar NPN silicon device. It is designed to be used in high­ speed, medium-current switching applications.

Contextual Info: y v3 37E » SEUELAB LTD SEMELAB \jb T&- // BUP48 /gào NPN MULTI-EPITAXIAL TRANSISTOR Designed for high energy applications requiring robust fast switching devices M E C H A N IC A L D A T A D im e nsion s in mm FEATURES • lo w v«,., • FA ST SW ITCHING

transistor 2N4015

Abstract: 2N3806
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL PNP TRANSISTOR TO-78 VcEO sus VOLTS Ic (max) AMPS 2N3726 45 0.1 2N3727 45 2N3806 PACKAGE DEVICE TYPE Jb TO-78 @ I<yV cE min/max @ mA/V h fE ^CE(sat) @ Ic/I b V @ raA/mA C<F p (MHz) 115@50/5 0.25@50/2.5 8 200 0.1

Contextual Info: bq2004 O JB E N C H M A R Q Fast Charge IC Features General Description >• F ast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2004 F ast Charge IC provides com prehensive fast charge control functions together w ith high-speed

2SC4045

Contextual Info: 2SC4045 h 7 y V 7» $ /Transistors 2SC 4045 + y'JH> V ÿ s v W Epitaxial Planar NPN Silicon Transistor Amplifier • ÿJ-JB'^'iisEI/Dimensions Unit : mm 1) fT t f M i-'o fT=3.2GHz(Typ.) 2) Ce • rbb’ < ¡ÜŸÜÎio Ce • rbb'=4ps(Typ.) 3) N F A ^ J 'il'o

Contextual Info: h ’7 > y X ^ / T ransistors 2SD1943 2SD1943 NPN '> • ; = ! > i£ J i> J t ^ ± illiffl/L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor h FE V 'm i' Vr>4 V 'A ''J| "r • ^JB 'ri'iilS /D im en sio ns Unit: mm 1) 4. 5 ± 0 . 2 : h FE =

Contextual Info: O avan tek MGA-63100 Medium Power 2 Stage GaAs FET Cascade Avantek Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 22 dBm typical Pi <ib at 14 GHz High Gain: 10.5 dB typical Gi <jb at 14 GHz Single Supply Bias Description

2SB1535F5

Abstract: 2SB1535
Contextual Info: h7 > V £ /Transistors 2SB1535F5 Epitaxial Planar PNP Silicon Transistor féüá£S27*0,fÍ/l-o w Freq. Power Amp. • il-JB ^äiS/D im ensions Unit : mm • &J& 1) V ce (sat) 6. 5 + 0. 2 VcE (sat)S—0.6V 5 l + 3- 1 - 00 .- 21 r , i. (lc /lB = -0 .5 5 A /-0 .0 3 A )

JB TRANSISTOR SMD MARKING CODE

Abstract: LA 4262 smd transistor marking FJ B235t TLE4262G 4262 G marking 53d AEB01081 AED01087 AED01088
Contextual Info: • û 235bos □ o 'jb s n ?ai SIEM EN S 5-V Low-Drop Voltage Regulator TLE 4262 G B ipolar 1C P relim inary Data Features • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Overtemperature protection

irf540 equivalent

Abstract: current fed push pull topology pin configuration irf540 1N6219A
Contextual Info: MIC3830/3831/3832/3833 Current Fed PWM Controllers L u jj i ä r jbêèêê^ ^ Preliminary Information-Production Q3 '94 Features General Description The M IC3830 is a fa m ily of unique PWM controllers designed for use in current fed multiple output or p u sh -p u ll switched

2SC1000

Abstract: 2SC1000GR transistor 2sC1000 2SC1000 GR 2sc1000bl 2sc1000-bl 2SC1000-GR AC058 Termistor PTC Produced by Perfect Crystal Device Technology
Contextual Info: 2SC 1000 5 /U D > N P N Itr ^ 5 /^ W B h 5 > 2 ;^ P C T Ä Ä ^ IL IC O N NPN EPITAXIAL TRANSISTOR (PCT PROCESS) O < & JB » lfc íÉ # íÍ« ;í! o Low N oise Audio A m p lifie r A p p lic a tio n s • ^cao — 50V • U nit in mm : NF = 3dB(Max.»Rg- -L0kn

617DB-1018

Contextual Info: DUAL-TOROIDAL CORE COILS/900 PHASE SHIFTER/BIASSING HEAD FOR OPTICAL DISC DRIVE TOKO ¡ 'i n- -i jb / 9 0 Surface Mounting Dual-toroidal core coils «* m 5.5 x 4.4 x 3.2m m Max. m (6.9 x 6.9 x 3,6m m ) Max. B4F (6.9 x 6.9 x 4.4m m ) Max. (7.2 x 7.2 x 6.8m m ) Max.