JB SOT23 TRANSISTOR Search Results

JB marking transistor

Abstract: transistor marking 3em transistor marking JB MMBTH10 J JB transistor marking 3EM sot-23 C40 SOT23
Contextual Info: MMBTH10 NPN Silicon VHF/UHF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value

LMBTH10QLT1

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10QLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 25 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10PLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 20 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10QLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 25 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23

Contextual Info: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT-23 225 mW Unit：inch mm 0.006(0.15)MIN. FEATURES 0.120(3.04) • NPN Silicon 0.110(2.80) ‡/  0.103(2.60) 0.056(1.40) MECHANICAL DATA

Contextual Info: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT-23 225 mW Unit：inch mm FEATURES • NPN Silicon 0.120(3.04) ‡ 0.110(2.80) ‡ +LJK&XUUHQW*DLQ%DQG:LGWK3URGXFW

MMBTH10

Abstract: MPSH10 MPSH11
Contextual Info: MMBTH10 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 3 V Ptot 200 mW 1.8 mW / OC Total Device Dissipation FR-5 Board

MMBTH10

Abstract: MPSH10 MPSH11 sot23 jb jb transistor
Contextual Info: MMBTH10 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 3 V Ptot 200 mW 1.8 mW / OC Total Device Dissipation FR-5 Board

MMBTH10LT1

Abstract: MPSH10 MPSH11 jb transistor GFB30 MPSH10 S parameters
Contextual Info: MMBTH10LT1 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 Vdc Collector Emitter Voltage VCEO 25 Vdc Emitter Base Voltage VEBO 3 Vdc PD 225 mW 1.8 mW / C (1) o Total Device Dissipation FR-5 Board , TA=25 C

MPSH10 s parameters

Abstract: MMBTH10LT1 MPSH10 MPSH11
Contextual Info: MMBTH10LT1 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 Vdc Collector Emitter Voltage VCEO 25 Vdc Emitter Base Voltage VEBO 3 Vdc PD 225 mW 1.8 mW / C (1) o Total Device Dissipation FR-5 Board , TA=25 C

marking 3EM sot-23

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z Pb-Free Package is Available. Ordering Information LMBTH10LT1G Device Marking Shipping LMBTH10LT1G 3EM 3000/Tape&Reel LMBTH10LT3G 3EM 10000/Tape&Reel 3 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage

LMBTH10LT1

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc SOT–23

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10QLT1G Device Marking Shipping LMBTH10QLT1G 3EQ 3000/Tape&Reel LMBTH10QLT3G 3EQ 10000/Tape&Reel 3 1 MAXIMUM RATINGS

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

LMBTH10LT1G

Abstract: marking JB diode transistor marking 3em
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10LT1G Device Marking Shipping LMBTH10LT1G 3EM 3000/Tape&Reel LMBTH10LT3G 3EM 10000/Tape&Reel 3 1 MAXIMUM RATINGS

JB marking transistor

Abstract: marking JB diode transistor marking JB LMBTH10LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10QLT1G Device Marking Shipping LMBTH10QLT1G 3EQ 3000/Tape&Reel LMBTH10QLT3G 3EQ 10000/Tape&Reel 3 1 MAXIMUM RATINGS

LMBTH10LT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and LMBTH10LT1G S-LMBTH10LT1G Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

5cp smd

Abstract: smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23
Contextual Info: General Purpose SMD PNP Transistors 11 General Purpose SMD® PNP Transistors Description Mechanical Data Philips Components general purpose transistors combine the highest quality standards with state-of-the-art pro­ duction equipment to fulfill the need for generic, low-cost

MMBTH10

Contextual Info: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT- 23 225 mW Unit: inch mm .119(3.00) .110(2.80) .103(2.60) .047(1.20) .056(1.40) • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA .083(2.10) .066(1.70) Case : SOT-23, Plastic

514 transistor

Abstract: MMBC1622D7 b 514 transistor MMBC1622D6
Contextual Info: S A MS UN G SEMICO ND UCT OR INC MMBC1622D7 14E D | 7*11,4145 0007244 fl | NPN EPITAXIAL SILICON TRANSISTOR — — “ — — :- :- rT i < v AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C ! i Characteristic | Collector-Base Voltage

Contextual Info: KSC3123 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER SOT-23 Gce = 2 3dB Cre - 0 . 4 p F ABSOLUTE MAXIMUM RATINGS T a = 2 5 ° o Unit Symbol Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current

Contextual Info: büE D m 0133167 0000520 ^33 « S M L B 'T ' 3S-\> SEMELAB PLC SEMELAB 2N2907ACSM HIGH SPEED, MEDIUM POWER, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e n s io n sin m m

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z Pb-Free Package is Available. 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10QWT1G 1 BASE Featrues 3 z Pb-Free Package is Available. 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage