JAS 210 Search Results

Contextual Info: TLC193 TLC393 DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR SLCS115D - DECEMBER 1986 - REVISED JANUARY 1999 Very Low Power . . . 110 ,uW Typ at 5 V D, JG, P, OR PW PACKAGE TOP VIEW Fast Response Time . . . tp|_n = 2.5 jas Typ With 5-mV Overdrive Single Supply Operation:

Contextual Info: 5 V, 14-Bit Serial, 5 jas ADC in SO-8 Package AD7894 ANALOG DEVICES FEATURES Fast 14-Bit ADC w ith 5 |xs Conversion Tim e 8-Lead SOIC Package Single 5 V Supply Operation High Speed, Easy-to-Use, Serial Interface On-Chip Track/H old A m plifier Selection of Input Ranges

Contextual Info: 5 V, 14-Bit Serial, 5 jas ADC in SO-8 Package AD7894 ANALOG DEVICES FEATURES Fast 14-Bit ADC w ith 5 |xs Conversion Tim e 8-Lead SOIC Package Single 5 V Supply Operation High Speed, Easy-to-Use, Serial Interface On-Chip Track/H old A m plifier Selection of Input Ranges

UL2651

Abstract: UL-2651 ide cable 2651 ID405P040W3BK101 GR01 JAS-26
Contextual Info: REVISIONS DATE LTR APVD. DESCRIPTION 2002/03/27 New Drawing 2005/09/09 Title and Title No. Revised 40 «=«39 IsJ tsJ si l\ IA 3 8 oi+lO :j' ,+10 180_o U N LESS OTHERW ISE SPE C IF IE D TOLERAN CE ; EA W 265128GR40CF000XM 01 EA ID405P040W2BK101 EA ID405P040W3BK101

Optocoupler HP 3120

Abstract: IC A 3120 igbt drive IGBT Gate Drive Optocoupler a 3120 pin diagram optocoupler A 3120 optocoupler
Contextual Info: Thal H EW LETT W LEM PACKARD 1.5 Amp Output Current IGBT Gate Drive Optocoupler Technical Data HCPL-T250 Features Description • Input Threshold Current I flh : 5 in A (Max.) • Supply Current (Ice): 11 mA (Max.) • Supply Voltage (Vc c ): 15-35 V • Output Current

S5B-PH-K-S

Abstract: jas 210 EC202E020B N5BA
Contextual Info: C U I In c ., 2001 S ’ Extended Life Metal Shaft Rugged Design 2 Million Cycles 0.787 2 0 .0 0.039- ( 1.0 ) + 9 ?9 CD Q CO CN § • rS § §. M9 00.098 SwitchTravel -0.03 (0 .8 ) (0 2 .5 ) rn 0.315 (8 ) 0.787 (20±0.5) 0.819 JST #S5B-PH-K-S (2 0 .8)

Contextual Info: r Phase Control Thyristor CS 800 ITRM S = 1600 A TAVM VRRM V RSM V RRM V DSM V DRM V V 1200 1400 1600 1200 1400 1600 Symbol Type s r 3 4 CS 800 - 12io1 CS 8 0 0 - 14io1 CS 800 - 16io1 Maximum Ratings Test Conditions 1600 800 A A 10 ms 50 Hz , sine 8.3 ms (60 Hz), sine

log tx2

Abstract: ic 74104 MIC22 antilarsen dynamic
Contextual Info: Tem ic U3810BM Semiconductors Multi-Standard Feature Phone IC Description The U3810BM multi-standard feature phone circuit is designed to be used with a microcontroller using a 2-wire serial bus. It performs all speech and line interface functions required in an electronic telephone set: the

400SS

Abstract: ss443a SS411A Honeywell SS443A
Contextual Info: SS400 Series Solid State Sensors Digital Position Sensors 400SS Series position sensors have a thermally balanced ingrated circuit over full temperature range. The negative compensation slope is optimized to match the negative temperature coeffi­ cient of lower cost magnets. Bipolar,

aj 454

Abstract: 4402ap
Contextual Info: PRELIMINARY 1048,576 W O R D x 4 BIT D Y N A M IC RAM DESCRIPTION The TC514402AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402AP/AJ/ASJ/AZ utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,"both internally and to the system user.

Contextual Info: M ITEL MP03 XXX 130 Series Phase Control Dual SCR, SCR/Diode Modules S E M IC O N D U C T O R Supersedes O ctober 1992 version, 2.0 DS4480-3.0 Decem ber 1998 FEATURES • Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction

Contextual Info: y *u % U N IT R D D E UC1625 UC2625 UC3625 Brushless DC Motor Controller FEATURES DESCRIPTION • Drives Power MOSFETs or Power Darlingtons Directly The UC3625 family of motor controller ICs integrate most of the functions required for high-performance brushless DC motor con­

Contextual Info: International Rectifier PD 9.1097A IRF7105 preliminary HEXFET® Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching

2107B

Abstract: F 5M 365 R intel 3205 Intel 2107B
Contextual Info: irry 3245 QUAD TTL-TO-MOS DRIVER FOR 4K N-CHANNEL MOS RAMs • Fully Compatible with 4K RAMs Without Requiring Extra Supply or External Devices ■ High Speed, 32 nsec Max. — Delay + Transition Time ■ Low Power — 75mW Typical Per Channel ■ High Density — Four Drivers in

IRZE

Contextual Info: IRFWZ24 Advanced Power MOSFET FEATURES BV DSS 60 V ♦ Rugged Gate Oxide Technology ^ D S o n - 0.07Q ♦ Lower Input Capacitance In = 17 A ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PA K ♦ 175°C Operating Temperature

pj 66 diode

Abstract: IRFPC60
Contextual Info: PD-9.870 International S Rectifier IRFPC60 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 600V R DS on = O-4 0 ^

Contextual Info: SP9601 SIGNAL PROCESSIN G EXCELLENCE 12-Bit, Low Power Voltage Output D/A Converter • ■ ■ ■ Low Power — 2mW Voltage Output Midscale Preset, Zero Volts Out 250MHz Multiplying Bandwidth 4-Quadrant ■ Standard 3-Wire Serial Interface ■ 8-pin (0.15") SOIC and Plastic DIP

Contextual Info: @ M ITEL DS2103SY Rectifier Diode S E M IC O N D U C T O R Supersedes July 1997 version, DS4172 - 3.1 DS4172 - 3.2 KEY PARAMETERS VRRM 2600V IF av, 4785A 'fs m 81000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.

bfr106

Contextual Info: • D02S20D 23T « a p x Philips S e m i c o n d u c t o r s _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23

LSE B4 transformer

Contextual Info: • R APT20GF120BRD ADVANCED W .\A p o w e r Te c h n o l o g y “ 1200V 32A Fast IGBT& FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free­ w heeling ultraFast Recovery Epitaxial Diode FRED offers superior

081Q

Contextual Info: A APT33GF120B2RD APT33GF120LRD 1200V 52A dvanced row er TECHN O LO G Y APT33G F 120B 2R D Fast IG B T & F R E D The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free­

Contextual Info: 1LH100 SIEMENS HERMETIC PHOTOTRANSISTOR OPTOCOUPLER FEA TU RES • Operating Temperature Range, - S S 'C to +125°C Package Dimensions in Inches mm ,390±,005 (9.91±.13) 7 • Current Transfer Ratio Guaranteed from -55“C to +100°C Ambient Temperature Range

tcnl 100

Contextual Info: / T _ LT1210 u TECHNOLOGY r m 1.1 A, 35M Hz C u rre n t F e e d b a c k A m p lifie r F€OTUR€S DCSCRIPTIOn • 1.1A Minimum Output Drive Current ■ 35MHz Bandwidth, Ay = 2, RL = 10Q ■ 900V/,us Slew Rate, Ay = 2, RL = 10i2 The LT 1210 is a current feedback amplifier with high

T835

Contextual Info: H ¡ 5»h P i ' r i i » n i i d i n i \ S 4 C I M I 6L:0 A I M X I i C M O S l K \ M \S4I.C I M I 610 I MX 16 CM US LDO DK/l M Preliminary information Features • O r g a n iz a t io n : 1 ,0 4 8 ,5 7 6 w o r d s x 16 b its 1 R e a d - m o d if y - w r it e