JAHF Search Results

Contextual Info: KODENSHI CORP A 25E D • 5 2 4 2 b 0 fl Q0002ST Q ■ T - <+ ' ' 7 ^ PHOTOINTERRUPTERS SG-27N iN K t, a iB S 7 * - K £ * I* £ 4 r£ fc 2 iiS a 7 * K > # 7 ^ T t . tu*(7)it $ * $ ■ * ) * DIMENSIONS (Unit: mm) <» j t & s w f t t * * < 4 7 t i ' i r .

AP03N70J

Abstract: JAHF
Contextual Info: AP03N70H/J-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G BVDSS 650V RDS ON 3.6Ω

Contextual Info: AP01L60H/J-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated D ▼ Fast Switching Speed ▼ Simple Drive Requirement 650V RDS ON 12Ω ID G ▼ RoHS Compliant & Halogen-Free BVDSS 1A

2N1051

Abstract: 2w105 2w1051 D 1414 transistor
Contextual Info: M IL -S-19-.00/216A NAVY 28 April 1969 SUPERSED IN G M IL -S-19500/216(NAVY) 9 N o v e m b e r 1 *3 1 M ILIT A R Y SPEC IFIC A TIO N SEMICONDUCTOR D EV IC E. TRANSISTOR, NPN, SILIC G n T Y PE 2N1051 « AAAflB 1* o w v n 1.1 Scope. This specification covers the detail requirem ents lo r silicon,

Contextual Info: Derg t a n n » rfcÿtortric%mnd B « p ro d u cb o «or inn toHni poife inanytom • M l f x n l M « M t « r i t a aUtaril , «gm th t p n p M a r. fe y » * a l « H E E U ED K N C S to « K S Ü C T O K S MC. > q o tlp a b n n p i n n i t m m o M a t f o n « r i b é i n f j a U n .

Contextual Info: AP03N70H/J-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement G RoHS Compliant & Halogen-Free BVDSS 650V RDS ON 3.6 ID 3.3A S Description

Contextual Info: rr DftAW HG M API 1 M iM C m PROJECTION | h ep cmoutmsrmrt s a r /— lj£ e jr OffDOl NUMBER ¿•MAT A m K MM 5.0 xs ¿00 j£ /£ too - 2 'O PTIONAL ¿2* / 1 ~r s f' s -/ -X f M -4 * - / -/ f /a // ATS <J*0 JV C If F -✓ ¿1 /6IQOO-S rD 2 .J & fc 9 a a -&