J50 TRANSISTOR Search Results

2N4950

Abstract: Solitron Transistor
Contextual Info: SOLITRON DEVICES INC bl DE |fl3bflbD5 0001307 0 | ~}7 0 T - 9 3 - S' ENGINEERING DEVICE SPECIFICATION (Transistor • 1.0 SECTION I: 1.1 Construction: 2 W\'j50 SILICON DEVICE DESCRIPTION This device is an NPN Diffused Planar Power Transistor (86d) packaged in a double-ended stud-mounted case (HAH).

transistor D 4515

Abstract: 224515 KS224515 ks2245
Contextual Info: 7 294621 P O W E R EX IÑC ~b5 d ÌT| 75^21 DDDDTOB fi f ~3 Single Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3 .1 5 0 + .0 2 0 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 T-33-35 150 Amperes J50/I Zvoîts M illim eters 94 Max .80 ± 0 .5

J250

Abstract: KTC3790U j50 transistor J-150 transistor j50
Contextual Info: SEMICONDUCTOR KTC3790U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.2dB, |S21e| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage

Contextual Info: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage

KTC3770S

Contextual Info: SEMICONDUCTOR KTC3770S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E B L L Low Noise Figure, High Gain. NF=1.1dB, |S21e| =11dB f=1GHz . D 2 H ) RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage

0.1 j100

Contextual Info: SEMICONDUCTOR KTC3770U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. NF=1.1dB, |S21e| =11dB f=1GHz . 2 J G A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage

KTC3605U

Contextual Info: SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B B1 Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=13dB f=1GHz . DIM A A1 B 1 6 2 5 3 4 C A A1 C Two internal isolated Transistors in one package.

KTC3605T

Contextual Info: SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K K B DIM A B C D E 1 6 G 2 5 G Low Noise Figure, High Gain. 3 4 2 NF=1.1dB, |S21e| =13dB f=1GHz . D F A Two internal isolated Transistors in one package.

KTC3605U

Contextual Info: SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B B1 Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=13dB f=1GHz . DIM A A1 B 1 6 2 5 3 4 C A A1 C Two internal isolated Transistors in one package.

KTC3770U

Contextual Info: SEMICONDUCTOR KTC3770U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.1dB, |S21e| =11dB f=1GHz . J G A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage

KTC3600U

Abstract: j50 transistor
Contextual Info: SEMICONDUCTOR KTC3600U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.1dB, |S21e| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage

7746-1 transistor

Abstract: 7746-1 67723 78272 54652
Contextual Info: NSF2250WT1 Advance Information NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner

Contextual Info: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • • Low Noise Figure, High Gain. NF —1.8dB, |S2lel2= 10dB f=2GHz + 0.2 2 .9 -0 -3 II -a MAXIMUM RATINGS (Ta = 25°C)

2SC5086

Contextual Info: TOSHIBA 2SC5086 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5086 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2 lel 2—lld B Unit in mm f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

KTC3770V

Contextual Info: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・NF=1.1dB, |S21e|2=11dB f=1GHz . B D G 2 3 K A ・Low Noise Figure, High Gain. MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES ・Low Noise Figure, High Gain. E B L L ・NF=1.2dB, |S21e| =13dB f=1GHz . D 2 3 H G A 2 1 MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT

Contextual Info: SEMICONDUCTOR KTC3600S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. E B L L NF=1.1dB, |S21e| =13dB f=1GHz . D 2 H SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage

Contextual Info: SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B B1 ・Low Noise Figure, High Gain. ・NF=1.1dB, |S21e|2=13dB f=1GHz . DIM A A1 B 1 6 2 5 3 4 C A A1 C ・Two internal isolated Transistors in one package.

transistor pt 6007

Abstract: NPN transistor 9418 c 5929 transistor C 5478 transistor transistor c 6093 9418 transistor transistor 9747 transistor k 4212 5294 power transistor transistor 5478
Contextual Info: SILICON TRANSISTOR UPA807T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz

KTC3770V

Abstract: transistor j50 marking s22
Contextual Info: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. B D G 2 3 K A NF=1.1dB, |S21e|2=11dB f=1GHz . MAXIMUM RATING (Ta=25 1 SYMBOL RATING UNIT Collector-Base Voltage

c 5929 transistor

Abstract: transistor k 2541 Transistor C 4927 741 LEM UPA802T 2955 transistor lem 723 733 transistor c 5299
Contextual Info: SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz

transistor j50

Abstract: J250 j50 transistor KTC3790S
Contextual Info: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. E B L L 2 D NF=1.2dB, |S21e| =13dB f=1GHz . H SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage