Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    J20A10M TRANSISTOR Search Results

    J20A10M TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    J20A10M TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    J20A10M transistor

    Abstract: J20A10M J20A10
    Contextual Info: TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)


    Original
    TJ20A10M3 J20A10M transistor J20A10M J20A10 PDF

    J20A10M

    Abstract: J20A10M transistor TJ20A10M3 J20A10 tj20a10m J20A10M3
    Contextual Info: TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)


    Original
    TJ20A10M3 J20A10M J20A10M transistor TJ20A10M3 J20A10 tj20a10m J20A10M3 PDF

    J20A10

    Abstract: J20A10M J20A10M transistor TJ20A10M3
    Contextual Info: TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)


    Original
    TJ20A10M3 J20A10 J20A10M J20A10M transistor TJ20A10M3 PDF