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Toshiba America Electronic Components TJ90S04M3L,LQ MOSFETs DPAK+ PD=180W F=1MHZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	TJ90S04M3L,LQ	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $0.94	Buy Now
Littelfuse Inc SMDJ20A-100
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SMDJ20A-100		722		1	1 $1.05 10 $1.05 100 $0.39 1000 $0.29 10000 $0.29	Buy Now

J20A10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
J20A10M Abstract: TJ20A10M3 J20A10 J20A10M3 Contextual Info: J20A10M3 東芝電界効果トランジスタシリコンPチャネルMOS形 U-MOSⅥ J20A10M3 ○ スイッチングレギュレータ用単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: \|Yfs\|= 50 S (標準)	Original	tj20a10m3 sc-67 2-10u1b j20a10m +2j20a10 j20a10m3	PDF
J20A10 Abstract: J20A10M J20A10M transistor TJ20A10M3 Contextual Info: J20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI J20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)	Original	tj20a10m3 j20a10 j20a10m j20a10m transistor	PDF
J20A10M Abstract: J20A10M transistor TJ20A10M3 J20A10 tj20a10m J20A10M3 Contextual Info: J20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI J20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)	Original	tj20a10m3 j20a10m j20a10m transistor j20a10 +2tj20a10m j20a10m3	PDF
J20A10M transistor Abstract: J20A10M J20A10 Contextual Info: J20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI J20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)	Original	tj20a10m3 j20a10m transistor j20a10m j20a10	PDF