J10MS Search Results

Contextual Info: PD-91352A In te rn a tio n a l I ö R Rectifier IRF530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 1 0 0 V R d S (o r) = 0 .1 1 f ì

IRLU

Abstract: IRL530N
Contextual Info: PD -9 .1 6 0 7 A In te rn a tio n a l IOR Rectifier IRLR/U3410 PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Ultra Low On-Resistance • Surface Mount IRLR3410 • Straight Lead (IRLU3410) • Advanced Process Technology • Fast Switching

DIODE D3S 5D

Contextual Info: PD -9.1674 International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A

C541 DIODE

Abstract: C540 DIODE Diode C541 TO-220 IRL3705N IRL3705N MARKING C541
Contextual Info: P D - 9 .1 3 7 0 C International X03R. Rectifier IRL3705N H E X F E T P o w er M O S F E T • • • • • • Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

Contextual Info: International IG R Rectifier pd-ms« IR F 2 8 0 7 S /L preliminary HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

DIODE D3S 5D

Abstract: diode D3s IRFZ3
Contextual Info: PD - 9.1674A International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A

gs 1117 ax

Abstract: W923
Contextual Info: PD - 9.1658A International lO R Rectifier IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 Straight Lead (IRFU9214) Advanced Process Technology Fast Switching Fully Avalanche Rated V d s s = -2 5 0 V R D S (on) = 3 . 0 Q. ID = - 2 . 7 A

Z46N

Contextual Info: PD - 9.1305A International IQR Rectifier IRFZ46NS/L HEXFET Power M O SFET • Advanced Process Technology • Surface Mount IRFZ46NS • Low-profile through-hole (IRFZ46NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 5 5 V

international rectifier NE 22

Abstract: IRF9520N equivalent 40a 15v diode
Contextual Info: P D - 9.1527 International IQ R Rectifier IRFI9520N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated