J1 TRANSISTOR Search Results

mj14003

Abstract: mj14002 J14002
Contextual Info: MOTOROLA Order this document by MJ14001/D SEMICONDUCTOR TECHNICAL DATA NPN M J1 4 002* PNP High-C urrent Com plem entary Silicon Power Transistors M J14001 M J1 4 003* . . . designed for use in high-pow er amplifier and switching circuit applications, •

Contextual Info: B 53 9 -9 7 J1 7 6 J1 7 7 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • COMMUTATORS • ANALOG SWITCHES A bsolute m axim um ratin gs at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 30 V Continuous Forward Gate Current

Contextual Info: h 7 > y ^ ^ / T ransistors FMG7 FMG7 11° £ * t7JU7 V - ± zl 7 J1/ 5 X ^ - J1/ K N PN V 1 J =1 > h 7 > V X ? •f ^ K v - f /V ln v e rte r Driver Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor • ^tJfjTf-'iigl/'Dimensions Unit : mm • 1) X —

MJ10006

Contextual Info: I tBbTESM MOTOROLA TECHNICAL DATA D e s ifjn o r s D a ta S h e e t 10 A M P E R E NPN SILICON SWITCHMODE SER IES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE POWER DARLINGTON TRANSISTORS T he M J1 0 0 0 6 an d M J1 0 0 0 7 Darlington transistors are design ed

CHT9013PT

Abstract: h 033 marking J2 sot-23 MARKING J3 SOT-23 J1 TRANSISTOR J3 SOT-23 transistor SOT23 J1
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT9013PT SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * HFE L :J3 * HFE(H):J2 * HFE(J):J1 .066 (1.70)

CHT9013GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT9013GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * HFE L :J3 * HFE(H):J2 * HFE(J):J1 .066 (1.70)

RX1214B150W

Contextual Info: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

Contextual Info: FMJ1A Transistor, digital, PNP, integral diode Features Dimensions Units: mm • available in an SMT5 (FMT, SC-74A) package • package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • same size as SMT3 (SMT, SC-59), so

Diode T148

Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
Contextual Info: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2

siemens b 58 468 la intel 80

Abstract: siemens b 58 468 la intel 80 siemens
Contextual Info: SIEMENS ICs for Communications E1 / T1 / J1 Framer and Line Interface Component for Long and Short Haul Applications FALC 56 PEB 2256 Version 1.1 Preliminary Data Sheet 11.98 DS 1 PEB 2256 PRELIMINARY Revision History: Current Version: 11.98 Previous Version:

Contextual Info: SIEMENS ICs for Communications Quad Framing and Line Interface Component for E1 / T1 / J1 QuadFALC PEB 22554 Version 1.1 Preliminary Data Sheet 09.98 DS 1 PEB 22554 Revision History: Current Version: 09.98 Previous Version: None Page in previous Version

Contextual Info: T O SH IB A GT1 5 J1 03 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 1 5 J 1 0 3 (S M) Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.35^s(Max.)

BF840

Abstract: BF841 transistors marking ND transistors C 828
Contextual Info: BF840 BF841 IL SILICON PLANAR TRANSISTORS N -P -N transistors Marking BF840 = NC BF841 = ND PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m _3.0_ 2.8 0.48 0.38 0.14 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2 6 2.4 J1’ .0 2 ! 0.89 0.60 0.40

IFR7821

Abstract: IFR7821-TR R013F power supply cuk GRM31CR61E106K B320A CRCW08050000FRT1 WSL-2010-R013-F MIC2196 MIC6211-BM5
Contextual Info: MIC2196 CUK Evaluation Board Micrel MIC2196 CUK Evaluation Board 400kHz SO-8 CUK Introduction Quick-Start Guide Refer to Figure 1 for the following: 1. Connect the positive terminal from the power supply to VIN post J1 on the MIC2196 CUK evaluation board.

446V

Abstract: ADP221 ADP220 AN-617 200VW
Contextual Info: Dual, 200 mA, Low Noise, High PSRR Voltage Regulator ADP220/ADP221 FEATURES Mobile phones Digital cameras and audio devices Portable and battery-powered equipment Portable medical devices Post dc-to-dc regulation J1 A 1 2 EN1 VOUT1 VOUT1 = 2.8V C1 1µF U1

A13F

Contextual Info: R Subminiature Rectangular Inductive Prox E2S World’s Smallest Square Sensor with Built-in Amplifier H 5.5 x 5.5 mm type allows smaller, space-saving machines and devices H High response frequency 1 kHz for fast machine processes H Long sensing distance: (E2S-j1,

adp221

Contextual Info: Dual, 200 mA, Low Noise, High PSRR Voltage Regulator ADP220/ADP221 FEATURES Mobile phones Digital cameras and audio devices Portable and battery-powered equipment Portable medical devices Post dc-to-dc regulation J1 A 1 2 EN1 VOUT1 VOUT1 = 2.8V C1 1µF U1

adp221

Abstract: 07572025
Contextual Info: Dual, 200 mA, Low Noise, High PSRR Voltage Regulator ADP220/ADP221 FEATURES Mobile phones Digital cameras and audio devices Portable and battery-powered equipment Portable medical devices Post dc-to-dc regulation J1 A 1 2 EN1 VOUT1 VOUT1 = 2.8V C1 1µF U1

07572025

Abstract: adp221
Contextual Info: Dual, 200 mA, Low Noise, High PSRR Voltage Regulator ADP220/ADP221 FEATURES Mobile phones Digital cameras and audio devices Portable and battery-powered equipment Portable medical devices Post dc-to-dc regulation J1 A 1 2 EN1 VOUT1 VOUT1 = 2.8V C1 1µF U1

2N2657

Abstract: 2N2658 PG1150 PG1151 PG1152 PG1153 PG1154 PG1155 PG1156 Sprague Electric
Contextual Info: 0043592 A P F E L E C T R O N IC S .2 A .0149,., D IN C - * :A P I ELECTRONICS INC 20^ DE 1 0 0 4 3 S T 2 00D014Ì 4 'J1-' INTERIM BULLETIN: Subject to Revision Without Notice -, . - 1 •* r- -*í - -.-APRIL 15,1971 POWER TRANSISTOR ^ ENGINEERING BULLETIN

MJ15025

Abstract: transistor MJ15025 MJ15023 MJ1502S mj15 1B32A
Contextual Info: ^ M O S P E C SILICON POWER TRANSISTORS PNP M J150 23 M J1 5 0 2 5 The MJ15023 and MJ15025 are power base power transistors designed for high power audio,disk head positioners and other linear applications. FEA TU RES * High Safe Operating Area * High DC Current GainhFE= 15 Min @lc= 8.0 A VCE=4.0 V

Contextual Info: T O SH IB A G T1 5 J1 0 3 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 1 5 J 1 0 3 (S M) Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10.3M AX. 1.32 • • • • High Input Impedance High Speed : tf= 0.35^8 (Max.)

MJ11017

Abstract: darlington power transistor mj11021 MJ11021 Motorola semiconductor mj11018 1N5825 MJ11018 MJ11022 MSD6100 transistor pnp 3015
Contextual Info: MOTOROLA Order this document by MJ11017/D SEMICONDUCTOR TECHNICAL DATA PNP M J11017 Com plem entary Darlington Silicon Power Transistors M J1 1 021* NPN . . . d e sig ned fo r use as ge ne ral pu rpo se am plifiers, low fre q u e n cy sw itch ing and m otor con tro l applications.

D988

Abstract: BUV26F Scans-00459 0031G73 max 1988 SWITCHING SYSTEMS INTERNATIONAL 26AF BUV26AF
Contextual Info: PHILIPS INTERNATIONAL MSB D ca 711Ga5b 0Q31G73 3 Q P H I N _ BUV26F BUV26AF J1 T - 3 3 - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators, m otor control