J 939 Search Results

Contextual Info: IBM13T2649JC 2M x 64 S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency J Units j 3 jfcK I Clock Frequency j 100 j MHz ! jtcK

EUPEC Thyristor

Abstract: EUPEC Thyristor LTT thyristor ltt thyristor lifetime LTT thyristor all types of thyristor and schematic Infineon power diffusion process thyristor using of power system 6" thyristor for HVDC HIGH VOLTAGE THYRISTOR
Contextual Info: State of the Art Light Triggered Thyristors with Integrated Protection Functions J. Dorn1 , U. Kellner1), F.-J. Niedernostheide2), H.-J. Schulze2) 1) eupec GmbH, Max-Planck-Str. 5, D-59581 Warstein, Germany 2) Infineon AG, Balanstr. 59, D-81541 München, Germany

T3d30

Abstract: T3D 76
Contextual Info: 1 3 2 4 £. 3 ± 0.3 Ltej y Í ° 0 °oVoVo°< £o°oH ïo ^ o ^0o ^0 o 0^ o0^ o0^ 0c r o0ip < Ô O O O O O O O O i q q q q q q g S^^Oqj O^O j O j O 'ÍO j O 'ÍO j I ' jiKJ ^M^-/Jl<j jw Jllw»Jl» d^<3„c3^<3„d^d I&0 < O _£ ,<O W _I • o o O O »j I Q

ggk 75a

Abstract: YL 69 TDC03 538BJ 65A0 IQN69556 efg8f MAl390
Contextual Info: =;?J FH7A>B>6GHE: 6HGCACG>I: E:@6K ;PMZ[XPY * Ha_` [mjj]fl [gflY[l [YhY[alq /CYjjqaf_ [mjj]fl? 8:A465eaf 7:A46`0 * Qoal[`af_ [YhY[alq mh lg 75A / Yl =: C 0 g * Iehjgn]\ `]Yl j]kaklYf[] * Ha_` j]kaklYf[] lg naZjYlagf Yf\ k`g[c G]WRNMS 6WWSRNMZRVUY * P]^dgo kgd\]jaf_ n]jkagf YnYadYZd]

Contextual Info: IBM13M8734HCD P relim inary 8M x 72 1 Bank R eg istered /B u ffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: j -10 | Device Latency 1 3 JClock Frequency j 66 Clock Access Tim e j 8.2

LC7150

Abstract: LC7151 i222 RX-2 -G 27Mhz
Contextual Info: } È £ ^ — KNo. N 1 6 3 4 G SAftYO -J .-X ¿ P if f c n n . ~ X M 6 3 4 F t í l/Ä 5A t < J t'èV '. C IV IO S - > i; Z 1 > ¥ fc c LC7150 hLSI ««6 j i í i f f l •S 'fifflP L L F 'ijS L 3 IÍ ÍfflP L L ± f ''f *J ? H 'jj& 'Q 7 > a v ? f ò } i

74F109

Abstract: I74F109D I74F109N N74F109D N74F109N 74F109DC
Contextual Info: INTEGRATED CIRCUITS 74F109 Positive J-K positive edge-triggered flip-flops Product specification IC15 Data Handbook Philips Semiconductors 1990 Oct 23 Philips Semiconductors Product specification Postive J-K positive edge-triggered flip-flops FEATURE 74F109

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

M80-01300XX

Abstract: M8-001 M80-01100XX dil 18 mz M80-1030898S M80-1031098S M80-1031298S
Contextual Info: DRAWING No.: M 80-103X X 98S CD ID O t-1 Cusí SH EET 2 OF 2 | IF n1FormaHon S heel ^Ml IN DOUBT - ASK j c j NOT TO S C A L E J THIRD ANGLE PRO JECTIO N ALL DIMENSIONS IN mm ORDER CODE; (7,55) M80-103XX98S 3,92 J.lü | No. OF CONTACTS — 04, 06, 08, 10, 12, H

74F50109

Abstract: 74F5074 74F74 74F109 74F50728 74F50729 N74F50109D N74F50109N
Contextual Info: INTEGRATED CIRCUITS 74F50109 Synchronizing dual J-K positive edge-triggered flip-flop with metastable immune characteristics Product specification IC15 Data Handbook Philips Semiconductors 1990 Sep 14 Philips Semiconductors Product specification Synchronizing dual J–K positive edge-triggered

74F113

Abstract: I74F113D I74F113N N74F113D N74F113N
Contextual Info: INTEGRATED CIRCUITS 74F113 Dual J-K negative edge-triggered flip-flops without reset Product specification IC15 Data Handbook Philips Semiconductors 1991 Feb 14 Philips Semiconductors Product specification Dual J-K negative edge-triggered flip-flops without reset

k0215

Abstract: 74F112 I74F112D I74F112N N74F112D N74F112N
Contextual Info: INTEGRATED CIRCUITS 74F112 Dual J-K negative edge-triggered flip-flop Product specification IC15 Data Handbook Philips Semiconductors 1990 Feb 09 Philips Semiconductors Product specification Dual J-K negative edge-triggered flip-flop FEATURE 74F112 PIN CONFIGURATION

philips tcxo 10mhz

Abstract: CTT94008 distance calculate via radio frequency AN93016 roland ic SSOP20 UMA1015M basic simple DUAL CHANNEL FM receiver CIRCUIT DIAGRAM with small circuit 1GHz vco 6cdbh
Contextual Info: Philips Semiconductors Application note UMA1015M low power dual 1GHz frequency synthesizer AN93016 Author: Ir. J. J. Jacobs SUMMARY This application note is a guide for designing a phase locked loop based on the Philips UMA1015M dual frequency synthesizer. The

1N935

Abstract: 1N9398 1N935A 1N935B 938B 939B 55945 938B diode
Contextual Info: 1N 935 thru 11M940B Microsemi Corp. 9.0 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES FEATURES • Z E N E R V O L T A G E 9.0V • 1N935B, 937B, 938B, 939B, 940B H A V E JA N , J A N T X , A N D J A N T X V Q U A LIF IC A T IO N S TO MIL-S-19500/156

B938A

Abstract: B939A 2SK1967 2SD1316
Contextual Info: N Type Package h Transistors Outline U n it I mm 6.7max 3.7max 6 5max ,1.1 ma» mm. m N5Ü' 'f "j 'T - v U s « S <D7V> h £454' ä IZ m & m à 7 1 0 - 220« ^ « ^ li lJj j J 7 7 f 7 ^ ' ^ - v T ' î o • f t fi5i.8.4 S r I ; -Ö- 08±0, RO.S/^i ! I R 0.5

EL3N

Abstract: Scans-0017879 VA250 550 WG2 WO08
Contextual Info: PHILIPS EL3N OUTPUT PENTODE PENTHODE DE SORTIE ENDPENTHODE Heating : indirect; parallel supply Chauffage: indirect; alimentationparallèle Heizung : indirekt;Parallelspeisung Dimensions in mm Dimensions en mm Abmessungen in mm k j j3 j n f 6,3 V If 0,9 A M i l I# / £

Contextual Info: REVISION B SMA-J-C-XX-ST-B10 DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] TERMINATION -BH10: BULKHEAD RG58 CABLE GENDER -J: JACK TYPE -C: CABLE ORIENTATION -ST: STRAIGHT PLATING SPECIFICATION -H: HEAVY GOLD (SEE NOTES 5 & 6) (TNC-FER-003-F) (SMA-NUT-001-F)

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

iDRN-TC

Abstract: Serial rs232 DB9 to RJ12 Serial DB9 to RJ12 DB25-RJ12 RJ12 to db25 RJ12 connector RJ12 to RS232 DB9-RJ12 RJ12 db9 RJ12
Contextual Info: 2 START HERE iDRN-TC INPUT TYPE: Type J,K,T,E,R,S,B,N, J DIN THERMOCOUPLE INPUT General Description: The iDRN Series of DIN rail-mountable signal conditioners are available for Thermocouple, RTD, Strain, Process, AC Voltage, AC Current and Pulse/Totalizer input types.

Contextual Info: IBM13N3649JC 3M x 64 2 Bank Unbuffered SDRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 3Mx64 Synchronous DRAM DIMM • Performance: 10 CAS Latency ! fcK I Clock Frequency • • • • • • j Units j

Contextual Info: IBM13T4644MPB IBM13T8644MPB 4M/8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 4/8Mx64 Synchronous DRAM SO DIMM • Performance: -10 CAS Latency 100 ;fCK j C lock Frequency \ MHz j { 10 \ ns i

Contextual Info: IBM13M64734CCA 64M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: I -260 | -360 I -360 ! Units i Device Latency i fCK I Clock Frequency 2 2 j 100 j 66

GN 139

Abstract: GF-MF/90
Contextual Info: Adapters Unless noted, body and pin material is brass, contact is BeCu, insulator is PTFE, plating on components is BA. Catalog Number Body Material Plating Brass Sn Aluminum Chromate conversion GN-50-SP-J GN-50-SP-J-AL 1.66 .68 .31 "N" FEMALE INTERFACE 5/8-24 THD.

BA 528

Contextual Info: Adapters Unless noted, body and pin material is brass, contact is BeCu, insulator is PTFE, plating on components is BA. Catalog Number Body Material Plating Brass Sn Aluminum Chromate conversion GN-50-SP-J GN-50-SP-J-AL 1.66 .68 .31 "N" FEMALE INTERFACE 5/8-24 THD.