J 122 MITSUBISHI Search Results
J 122 MITSUBISHI Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 1-Aug.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200HE-66S 2. Structure Flat base type Insulated package, AlSiC base plate |
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RM1200HE-66S HVM-2003-A | |
3642G
Abstract: MGFC44V3642
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OCR Scan |
MGFC44V3642 MGFC44V3642 -42dBc digita27 90GHz 25deg Dec-98 3642G | |
diode lakContextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM400DG-66S 2. Structure Flat base type Insulated package, AlSiC base plate |
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RM400DG-66S HVM-2012 31-Jan diode lak | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 1-Aug.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200HE-66S 2. Structure Flat base type Insulated package, AlSiC base plate |
Original |
RM1200HE-66S HVM-2003-A 300A/Â | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM400DG-66S 2. Structure Flat base type Insulated package, AlSiC base plate |
Original |
RM400DG-66S HVM-2012 800A/Â 31-Jan | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R Y.konishi E I.Umezaki M.Yamamoto V Nov.-18-2008 Oct.6.2003 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number |
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RM600HE-90S HVM-2006-A | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R Y.konishi E I.Umezaki M.Yamamoto V Nov.-18-2008 Oct.6.2003 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number |
Original |
RM600HE-90S HVM-2006-A 600A/Â | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R E I.Umezaki M.Yamamoto V Nov.-18-2008 Nov.14.2002 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number RM1800HE-34S |
Original |
RM1800HE-34S HVM-2001-A | |
diode UF 2010
Abstract: diode 2200
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Original |
27-Sep RM1200DG-66S HVM-2010-A 31-Jan diode UF 2010 diode 2200 | |
rm300DGContextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi A K.Kurachiv R E I.Umezaki I.Umezaki V 11-May-2007 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM300DG-90S 2. Structure |
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11-May-2007 RM300DG-90S HVM-2011-A 31-Jan rm300DG | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E H.Yamaguchi V 10-Apr.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM900DB-90S 2. Structure Flat base type Insulated package, Cu base plate |
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10-Apr RM900DB-90S HVM-2018 | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E H.Yamaguchi V 10-Apr.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM900DB-90S 2. Structure Flat base type Insulated package, Cu base plate |
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10-Apr RM900DB-90S HVM-2018 600A/Â | |
RM600DG-130SContextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM600DG-130S 2. Structure Flat base type Insulated package, AlSiC base plate |
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RM600DG-130S HVM-2016 31-Jan RM600DG-130S | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM600DG-130S 2. Structure Flat base type Insulated package, AlSiC base plate |
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RM600DG-130S HVM-2016 000A/Â 31-Jan | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM900HC-90S 2. Structure Flat base type Insulated package, AlSiC base plate |
Original |
RM900HC-90S HVM-2017 300A/Â 31-Jan | |
A3700Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 8-May-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200DB-66S 2. Structure Flat base type Insulated package, Cu base plate |
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8-May-2008 RM1200DB-66S HVM-2019 800A/Â A3700 | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 8-May-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200DB-66S 2. Structure Flat base type Insulated package, Cu base plate |
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8-May-2008 RM1200DB-66S HVM-2019 | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM200DG-130S 2. Structure Flat base type Insulated package, AlSiC base plate |
Original |
RM200DG-130S HVM-2014 31-Jan | |
3300AContextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM900HC-90S 2. Structure Flat base type Insulated package, AlSiC base plate |
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RM900HC-90S HVM-2017 31-Jan 3300A | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura A K.Kurachi R I.Umezaki E H.Yamaguchi I.Umezaki V 27-Sep.-2006 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200DG-66S |
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27-Sep RM1200DG-66S HVM-2010-A 400A/Â 31-Jan | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi A K.Kurachiv R E I.Umezaki I.Umezaki V 11-May-2007 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM300DG-90S 2. Structure |
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11-May-2007 RM300DG-90S HVM-2011-A 100A/Â 31-Jan | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> pBEUW"N^ i M G FC 44V 3642 tf*'- ' 3 .6 ~ 4 .2 G H z BAND 2 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 4 V 3 6 4 2 is an internally impedance-matched GaAs power F E T especially designed fo r use in 3 . 6 — 4 . 2 |
OCR Scan |
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4410D
Abstract: F4410D
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OCR Scan |
F4410D 4410D MGF4416D MGF4417D MGF4418D | |
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Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura A K.Kurachi R I.Umezaki E H.Yamaguchi I.Umezaki V 11-Oct.-2005 Nov.-18-2008 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number |
Original |
11-Oct RM1200DB-34S HVM-2008-A | |