IXYS DS 145 Search Results

ixfh50n60

Abstract: 50n60p IXFT50N60P3 IXFQ50N60P3 ixfh50n60p3 50N60P3 DS100310 N-channel MOSFET to-247 50a 50n60 N-channel MOSFET to-247 50a 600v
Contextual Info: Advance Technical Information IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 600V = 50A Ω ≤ 145mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol

50n60p

Contextual Info: Preliminary Technical Information Polar3TM HiperFETTM Power MOSFETs VDSS ID25 IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 = 600V = 50A Ω ≤ 145mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ)

42N50

Abstract: 42N50P2
Contextual Info: Advance Technical Information IXFH42N50P2 IXFT42N50P2 PolarP2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 42A Ω ≤ 145mΩ TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS

ixfn56n90p

Abstract: ixfn*56N90P 56N90P 56N90
Contextual Info: IXFN56N90P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 900V 56A Ω 145mΩ 300ns miniBLOC E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR

Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN56N90P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 900V 56A Ω 145mΩ 300ns miniBLOC E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR

Contextual Info: IXFN56N90P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = =   RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 900V 56A  145m 300ns miniBLOC E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C

ixfh50n60

Abstract: 50N60P IXFT50N60P3 ixfh50n60p3
Contextual Info: Preliminary Technical Information IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Polar3TM HiperFETTM Power MOSFETs VDSS ID25 = 600V = 50A Ω ≤ 145mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ)

Contextual Info: Polar2TM HiperFETTM Power MOSFET VDSS ID25 IXFH42N50P2 IXFT42N50P2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol = 500V = 42A Ω ≤ 145mΩ Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR

42n50

Contextual Info: IXFH42N50P2 IXFT42N50P2 Polar2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 42A Ω ≤ 145mΩ TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR

diode 14512 H

Contextual Info: Li IXYS Mil 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IGBT Modules lC25 = 160 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^CE sat typ. = ^ Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions Maximum Ratings

IXYS DS 145

Abstract: diode 14512 H
Contextual Info: ÖIXYS Mil 145*12 A3 MIO 145*12 A3 U m 145-12 A3 IGBT M odules lC25 = 160 A Short Circuit SOA Capability Square RBSOA ^ ces ” ^ ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- isÖL • i : E 72873 P relim in ary data S ym bo l C o n d itio n s

Contextual Info: MWI 100-12 T8T IC25 = 145 A = 1200 V VCES VCE sat typ. = 1.7 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 30,31,32 16,17,18 19 1 2 5 27, 28, 29 3 4 9 24, 25, 26 6 21, 22, 23 10 NTC 11 7 8 E72873 See outline drawing for pin arrangement

Contextual Info: MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IC25 = 160 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 1 7 6 3 4 5 2 MDI 1 3 4 5 1 7 6 3 2 1 4 5 6 7 3 2 2 E 72873 Preliminary data Symbol Conditions Maximum Ratings

100-12T8T

Contextual Info: MWI 100-12 T8T IC25 = 145 A = 1200 V VCES VCE sat typ. = 1.7 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 30,31,32 16,17,18 19 1 2 5 27, 28, 29 9 24, 25, 26 6 21, 22, 23 10 3 7 11 4 8 12 NTC 20 33,34,35 13,14,15 Features IGBTs Conditions

pcb diagram welding inverter

Abstract: MWI100-12T8T NTC solar sensor
Contextual Info: MWI100-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 145 A VCE sat = 1.7 V Part name (Marking on product) MWI100-12T8T 16, 17, 18 30, 31, 32 5 1 19 6 2 27 28 29 NTC 9 10 24 25 26 21 22 23 E 72873 20 3 7 11 4 8 12 Pin configuration see outlines. 13, 14, 15

160N10T

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA160N10T7 RDS on = 100 V = 160 A Ω ≤ 7.0 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

40N60SCD1

Abstract: ixkf40n60scd1 IXYS DS 145
Contextual Info: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 41 A RDS on) typ. = 60 mΩ trr = 70 ns with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS Preliminary data 1 DF 1 T 2 5 E72873

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH160N10T IXTQ160N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V

IXYS DS 145

Abstract: IXTA160N10T7 ds 430
Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N10T7 VDSS ID25 RDS on = 100 V = 160 A Ω ≤ 7.0 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

IXTH160N10T

Abstract: IXTQ160N10T
Contextual Info: Preliminary Technical Information IXTH160N10T IXTQ160N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V

Contextual Info: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS ID25 RDS on) typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = 600 V = 41 A = 60 m = 70 ns in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS DF Preliminary data 1 1 2 T 5 E72873 2

Contextual Info: MWI100-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 145 A VCE sat = 1.7 V Part name (Marking on product) MWI100-12T8T 16, 17, 18 30, 31, 32 19 20 10 6 2 27 28 29 NTC 9 5 1 24 25 26 21 22 23 3 7 11 4 8 12 E72873 Pin coniguration see outlines. 13, 14, 15

pcb diagram welding inverter

Abstract: solar inverters circuit diagram MWI100-12T8t ntc 2200 15 solar inverter circuit solar inverter pcb E72873 MWI100-12
Contextual Info: MWI100-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 145 A VCE sat = 1.7 V Part name (Marking on product) MWI100-12T8T 16, 17, 18 30, 31, 32 19 20 10 6 2 27 28 29 NTC 9 5 1 24 25 26 21 22 23 3 7 11 4 8 12 E72873 Pin configuration see outlines. 13, 14, 15

ixys vub 70 -16no1

Abstract: sensor marking code 145A VUB145-16NOXT
Contextual Info: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A