IXTR210P10T Search Results
IXTR210P10T Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| IXTR210P10T |
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FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 158A ISOPLUS247 | Original | 6 |
IXTR210P10T Price and Stock
IXYS Corporation IXTR210P10TMOSFETs TrenchP Channel Power MOSFETs |
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IXTR210P10T Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Preliminary Technical Information IXTR210P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V -195A Ω 8mΩ P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
IXTR210P10T -100V -195A ISOPLUS247 E153432 -100A 140P10T | |
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Contextual Info: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTR210P10T RDS on = = ≤ -100V -158A Ω 8mΩ P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
IXTR210P10T -100V -158A ISOPLUS247 E153432 140P10T | |
320TRContextual Info: Advance Technical Information IXTR210P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V -158A Ω 8mΩ P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
IXTR210P10T -100V -158A ISOPLUS247 E153432 -100A 140P10T 320TR |