IXTR210P10T Search Results
IXTR210P10T Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXTR210P10T | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 158A ISOPLUS247 | Original | 6 |
IXTR210P10T Price and Stock
IXYS Corporation IXTR210P10TIXTR210P10T |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTR210P10T | 29 | 2 |
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IXTR210P10T | Tube | 300 |
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IXTR210P10T | 29 | 1 |
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Littelfuse Inc IXTR210P10TDiscmsft Pchan-Trench Gate Isoplus247/ T; |Littelfuse IXTR210P10T |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTR210P10T | Bulk | 300 |
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IXTR210P10T | Bulk | 8 Weeks | 30 |
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IXTR210P10T |
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IXTR210P10T Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Preliminary Technical Information IXTR210P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V -195A Ω 8mΩ P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
ixtr210p10t-100v-195aisoplus247+3 | |
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Contextual Info: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTR210P10T RDS on = = ≤ -100V -158A Ω 8mΩ P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
ixtr210p10t-100v-158aisoplus247+2 | |
320TRContextual Info: Advance Technical Information IXTR210P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V -158A Ω 8mΩ P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
ixtr210p10t-100v-158aisoplus247+4 |