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    IXTP7N60PM Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTP7N60PM
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 4A TO-220 Original PDF 4
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    IXTP7N60PM Price and Stock

    IXYS Corporation

    IXYS Corporation IXTP7N60PM

    POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 600V, 1.1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IXTP7N60PM 29
    • 1 $4.50
    • 10 $2.25
    • 100 $2.25
    • 1000 $2.25
    • 10000 $2.25
    		Buy Now

    IXTP7N60PM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTA7N60PM IXTP7N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol


    Original     		ixta7n60pmixtp7n60pmo-2207n60p+106-17-08-d PDF

    7N60P

    Abstract: IXTP7N60PM
    Contextual Info: PolarTM Power MOSFET IXTP7N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		ixtp7n60pmo-2207n60p06-17-08-d PDF

    Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTP7N60PM RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		ixtp7n60pmo-2207n60p06-17-08-d PDF