IXTP60N10TM Search Results

IXTP60N10TM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
60N10T Abstract: IXTP60N10T IXTP60N10 IXTP60N10TM Contextual Info: Preliminary Technical Information IXTP60N10TM TrenchMVTM Power MOSFET VDSS ID25 = 100V = 33A Ω ≤ 19mΩ RDS on N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 W/ FORMED LEAD (IXTP.M) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C	Original	ixtp60n10tm o-220 062in 60n10t +37-08-a ixtp60n10t ixtp60n10	PDF
Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTP60N10TM = 100V = 33A Ω ≤ 19mΩ RDS on N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 W/ FORMED LEAD (IXTP.M) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C	Original	ixtp60n10tm o-220 60n10t 7-08-a	PDF

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60N10T

Abstract: IXTP60N10T IXTP60N10 IXTP60N10TM
Contextual Info: Preliminary Technical Information IXTP60N10TM TrenchMVTM Power MOSFET VDSS ID25 = 100V = 33A Ω ≤ 19mΩ RDS on N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 W/ FORMED LEAD (IXTP.M) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C

Original

ixtp60n10tm o-220 062in 60n10t +3

PDF

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTP60N10TM = 100V = 33A Ω ≤ 19mΩ RDS on N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 W/ FORMED LEAD (IXTP.M) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C

Original

ixtp60n10tm o-220 60n10t 7-08-a

PDF