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    IXTH1N250 Search Results

    IXTH1N250 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTH1N250
    		IXYS MOSFET N-CH 2500V 1.5A TO-247AD Original PDF 115.71KB
    IXTH1N250
    		IXYS MOSFET N-CH 2500V 1.5A TO-247AD Original PDF 115.71KB
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    IXTH1N250 Price and Stock

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    Littelfuse Inc IXTH1N250

    MOSFET N-CH 2500V 1.5A TO-247AD
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    DigiKey IXTH1N250 Tube 255 1
    • 1 $41.23
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    Verical IXTH1N250 194 2
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    • 100 $44.39
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    Newark IXTH1N250 Bulk 236 1
    • 1 $40.41
    • 10 $33.97
    • 100 $28.58
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    Quest Components IXTH1N250 155
    • 1 $72.32
    • 10 $72.32
    • 100 $56.05
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    IXYS Corporation IXTH1N250

    MOSFETs 1 Amps 2500V 40 Rds
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    Mouser Electronics IXTH1N250 74
    • 1 $41.17
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    Future Electronics IXTH1N250 Tube 300
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    TTI IXTH1N250 Tube 300
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    IXYS Integrated Circuits Division IXTH1N250

    MOSFET N-CH 2500V 1.5A TO-247AD / N-Channel 2500 V 1.5A (Tc) Through Hole TO-247AD
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    Win Source Electronics IXTH1N250 515
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    IXTH1N250 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTH1N250

    Abstract: 1n250 diode
    Contextual Info: IXTH1N250 High Voltage Power MOSFET VDSS ID25 RDS on = 2500V = 1.5A Ω ≤ 40Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 2500 V VGSS


    Original     		IXTH1N250 O-247 100ms 100ms 1N250 10-25-10-D IXTH1N250 1n250 diode PDF

    IXTH1N250

    Abstract: 1n250 diode T1N2 1N250
    Contextual Info: IXTH1N250 High Voltage Power MOSFET VDSS ID25 RDS on = 2500V = 1.5A Ω ≤ 40Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH1N250 O-247 100ms 1N250 10-25-10-D IXTH1N250 1n250 diode T1N2 1N250 PDF

    IXTH1N250

    Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH1N250 RDS on = 2500V = 1.5A Ω ≤ 40Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 2500 V VGSS


    Original     		IXTH1N250 O-247 100ms 1N250 10-25-10-D IXTH1N250 PDF

    09 45 845 0001

    Abstract: T1N2 IXTH1N250 1N250 1n250 diode 200V TO-247
    Contextual Info: High Voltage Power MOSFET IXTH1N250 VDSS ID25 RDS on = 2500V = 1.5A Ω ≤ 40Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 2500 V VGSS Continuous ±20 V VGSM Transient


    Original     		IXTH1N250 O-247 500mA 1N250 9-08-A 09 45 845 0001 T1N2 IXTH1N250 1N250 1n250 diode 200V TO-247 PDF

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF