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Catalog Datasheet	Type	Document Tags	PDF
IXTF1N250 Abstract: T1N2 1N250 Contextual Info: Advance Technical Information High Voltage Power MOSFET IXTF1N250 VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTF1N250 500mA 1N250 12-17-09-B IXTF1N250 T1N2 1N250	PDF
Contextual Info: Advance Technical Information High Voltage Power MOSFET VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω IXTF1N250 N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR	Original	IXTF1N250 500mA 1N250 12-17-09-B	PDF

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IXTF1N250

Abstract: T1N2 1N250
Contextual Info: Advance Technical Information High Voltage Power MOSFET IXTF1N250 VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Original

IXTF1N250 500mA 1N250 12-17-09-B IXTF1N250 T1N2 1N250

PDF

Contextual Info: Advance Technical Information High Voltage Power MOSFET VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω IXTF1N250 N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR

Original

IXTF1N250 500mA 1N250 12-17-09-B

PDF