IXTA05N100P Search Results
IXTA05N100P Datasheets Context Search
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Contextual Info: Preliminary Technical Information PolarTM Power MOSFET VDSS ID25 IXTA05N100P IXTP05N100P RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C |
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IXTA05N100P IXTP05N100P O-263 05N100P | |
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Contextual Info: Preliminary Technical Information IXTA05N100P IXTP05N100P PolarTM Power MOSFET VDSS ID25 RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C |
Original |
IXTA05N100P IXTP05N100P O-263 O-220AB 05N100P |