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    IXTP05N100P Search Results

    IXTP05N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTP05N100P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 500MA TO-263 Original PDF 5
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    IXTP05N100P Price and Stock

    IXYS Corporation

    IXYS Corporation IXTP05N100P

    MOSFET N-CH 1000V 500MA TO220AB
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    IXTP05N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET VDSS ID25 IXTA05N100P IXTP05N100P RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXTA05N100P IXTP05N100P O-263 05N100P PDF

    IXTP05N100P

    Abstract: 05n10
    Contextual Info: Advance Technical Information IXTP05N100P PolarTM Power MOSFET VDSS ID25 RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-220AB Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTP05N100P O-220AB 05N100P IXTP05N100P 05n10 PDF

    Contextual Info: Preliminary Technical Information IXTA05N100P IXTP05N100P PolarTM Power MOSFET VDSS ID25 RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXTA05N100P IXTP05N100P O-263 O-220AB 05N100P PDF