IXGH38N60U1 Search Results
IXGH38N60U1 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXGH38N60U1 |   | Ultra-low Vce(sat) IGBT With Diode | Original | 47.61KB | 2 | 
IXGH38N60U1 Price and Stock
IXYS Corporation
| IXYS Corporation IXGH38N60U1IGBT 600V 76A TO-247AD | |||||||||||
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|   | IXGH38N60U1 | Tube | 
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IXGH38N60U1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| Contextual Info: IXGH38N60U1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)60 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt. | Original | IXGH38N60U1 Junc-Case620m | |
| Contextual Info: IXGH 38N60U1 Ultra-Low VCE sat IGBT with Diode Symbol ^C25 v Maximum Ratings Test Conditions VCES ^ 600 V VCGB Td = 25°C to 150°C; RGE = 1 M il 600 V VGES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A 152 A ' cm = 25°C to 150°C | OCR Scan | 38N60U1 O-247 B2-85 |