IXGH 28N120BD1 Search Results

IXGH 28N120BD1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGH28N120BD1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 250W TO247	Original	PDF		6
IXGH 28N120BD1		IXYS	High Voltage IGBT with Diode	Original	PDF	176.33KB	5
IXGH28N120BD1		IXYS	IGBT Discretes	Original	PDF	608.14KB	5

IXGH 28N120BD1 Price and Stock

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IXYS Corporation


IXYS Corporation IXGH28N120BD1 IGBT PT 1200V 50A TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH28N120BD1	Tube			30	1 - 10 - 100 $8.41 1000 $8.41 10000 $8.41	Buy Now

IXGH 28N120BD1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXGH 28N120BD1 Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH 28N120BD1	PDF
Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247)	PDF
IXGH 28N120BD1 Abstract: igbt induction cooker 28N120 Contextual Info: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES	Original	28N120BD1 IXGH 28N120BD1 igbt induction cooker 28N120	PDF
igbt induction cooker Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	28N120BD1 IC110 O-268 0-12A/DSEC 0-12A igbt induction cooker	PDF
IXGH 28N120BD1 Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) 405B2 IXGH 28N120BD1	PDF
Contextual Info: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	28N120B IC110 O-268 O-247	PDF
28N120 Contextual Info: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	28N120B IC110 O-268 O-247 28N120	PDF