IXGB16N60U3 Search Results

Contextual Info: Three Independent IGBT with Diode in Power SIP IXGB16N60U3 VCES ^C25 VCE sat = 600 V = 16 A = 2.5 V Advanced data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V CGR T.J = 25°C to 150°C; RrF = 1 MQ Cab 600 V v GES Continuous ±20

Contextual Info: IXGB16N60U3 V Three Independent IGBT with Diode in Power SIP CES C25 VCE sat = 600 V = 16 A = 2.5 V Advanced data 1 2 3 4 5 6 7 8 9 10 11 12 Maximum Ratings Symbol Test Conditions V CES T j = 25°C to 150°C 600 V VCGR T j = 25°C to 150°C; RGE = 1 M fi

30n50 mosfet

Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
Contextual Info: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600