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    IXFX32N100P Search Results

    IXFX32N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFX32N100P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 32A PLUS247 Original PDF 4
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    IXFX32N100P Price and Stock

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    IXYS Corporation IXFX32N100P

    MOSFET N-CH 1000V 32A PLUS247-3
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    DigiKey IXFX32N100P Tube 297 1
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    Littelfuse Inc IXFX32N100P

    Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFX32N100P
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    IXFX32N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFK32N100P IXFX32N100P 300ns 32N100P 8-24-07-B PDF

    IXFX32N100P

    Abstract: ixfk32n100p PLUS247
    Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V


    Original     		IXFK32N100P IXFX32N100P 300ns O-264 32N100P 3-28-08-C IXFX32N100P ixfk32n100p PLUS247 PDF

    Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V V VGSS VGSM Continuous


    Original     		IXFK32N100P IXFX32N100P 300ns 32N100P 3-28-08-C PDF