Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFK32N100P Search Results

    IXFK32N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFK32N100P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 32A TO-264 Original PDF 4
    SF Impression Pixel

    IXFK32N100P Price and Stock

    Select Manufacturer

    IXYS Corporation IXFK32N100P

    MOSFET N-CH 1000V 32A TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFK32N100P Tube 290 1
    • 1 $24.91
    • 10 $24.91
    • 100 $15.35
    • 1000 $15.35
    • 10000 $15.35
    		Buy Now
    Mouser Electronics IXFK32N100P 350
    • 1 $24.52
    • 10 $16.15
    • 100 $15.35
    • 1000 $15.35
    • 10000 $15.35
    		Buy Now
    Future Electronics IXFK32N100P Tube 300
    • 1 -
    • 10 -
    • 100 $15.16
    • 1000 $14.90
    • 10000 $14.90
    		Buy Now
    TTI IXFK32N100P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $15.20
    • 10000 $15.20
    		Buy Now
    TME IXFK32N100P 1
    • 1 $23.58
    • 10 $19.16
    • 100 $18.63
    • 1000 $18.63
    • 10000 $18.63
    		Get Quote

    Littelfuse Inc IXFK32N100P

    Discmosfetn-Ch Hiperfet-Polar To-264(3)/ Tube |Littelfuse IXFK32N100P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFK32N100P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $16.10
    • 10000 $16.10
    		Buy Now

    IXFK32N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFK32N100P IXFX32N100P 300ns 32N100P 8-24-07-B PDF

    IXFX32N100P

    Abstract: ixfk32n100p PLUS247
    Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V


    Original     		IXFK32N100P IXFX32N100P 300ns O-264 32N100P 3-28-08-C IXFX32N100P ixfk32n100p PLUS247 PDF

    Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V V VGSS VGSM Continuous


    Original     		IXFK32N100P IXFX32N100P 300ns 32N100P 3-28-08-C PDF