IXFT52N30P Search Results
IXFT52N30P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advanced Technical Information IXFH52N30P IXFT52N30P PolarTM HiPerFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast recovery intrinsic diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings |
Original |
IXFH52N30P IXFT52N30P O-268 O-247AD 52N30P 52N30P |