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    IXFR32N100 Search Results

    IXFR32N100 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFR32N100P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 18A ISOPLUS247 Original PDF 4
    IXFR32N100Q3
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 23A ISOPLUS247 Original PDF 5
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    IXYS Corporation IXFR32N100Q3

    MOSFET N-CH 1000V 23A ISOPLUS247
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    DigiKey IXFR32N100Q3 Tube 28 1
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    Mouser Electronics IXFR32N100Q3
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    Bristol Electronics IXFR32N100Q3 30 1
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    Quest Components () IXFR32N100Q3 24
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    IXFR32N100Q3 24
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    IXYS Corporation IXFR32N100P

    MOSFET N-CH 1000V 18A ISOPLUS247
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    Littelfuse Inc IXFR32N100P

    Discmosfetn-Ch Hiperfet-Polar Isoplus247/ Tube |Littelfuse IXFR32N100P
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    Littelfuse Inc IXFR32N100Q3

    Discmsft Nchhiperfet-Q3 Class Isoplus247/ Tube |Littelfuse IXFR32N100Q3
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    IXFR32N100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR32N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFR32N100P 32N100P 8-24-07-B PDF

    Contextual Info: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR32N100Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 23A Ω 350mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		IXFR32N100Q3 300ns ISOPLUS247 E153432 32N100Q3 0-11-A PDF

    Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR32N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Maximum Ratings = 1000V = 18A ≤ 340mΩ Ω ≤ 300ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFR32N100P 300ns Dire12 32N100P 3-28-08-C PDF

    Contextual Info: Advance Technical Information IXFR32N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 23A Ω 350mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		IXFR32N100Q3 300ns ISOPLUS247 E153432 32N100Q3 0-11-A PDF

    IXFR32N100P

    Abstract: 32N100P ISOPLUS247 IXFR32N100
    Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFR32N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Maximum Ratings = 1000V = 18A ≤ 340mΩ Ω ≤ 300ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFR32N100P 300ns 32N100P 3-28-08-C IXFR32N100P ISOPLUS247 IXFR32N100 PDF

    IXFR32N100Q3

    Contextual Info: Preliminary Technical Information IXFR32N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 23A Ω 350mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		IXFR32N100Q3 300ns ISOPLUS247 E153432 32N100Q3 Q8-R44) IXFR32N100Q3 PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P PDF