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    IXFP5N100P Search Results

    IXFP5N100P Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFP5N100P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 5A TO-220 Original PDF 4
    IXFP5N100PM
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 2.3A TO-220 Original PDF 4
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    IXFP5N100P Price and Stock

    IXYS Corporation

    IXYS Corporation IXFP5N100P

    MOSFETs 5 Amps 1000V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFP5N100P 358
    • 1 $5.95
    • 10 $3.37
    • 100 $3.19
    • 1000 $2.51
    • 10000 $2.51
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    Verical IXFP5N100P 85 13
    • 1 -
    • 10 -
    • 100 $3.48
    • 1000 $3.48
    • 10000 $3.48
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    TTI IXFP5N100P Tube 300 50
    • 1 -
    • 10 -
    • 100 $3.08
    • 1000 $2.48
    • 10000 $2.48
    Buy Now

    IXYS Corporation IXFP5N100PM

    MOSFETs TO220 1KV 5A N-CH POLAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFP5N100PM
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.03
    • 10000 $4.03
    Get Quote
    TTI IXFP5N100PM Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.78
    • 10000 $3.78
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    IXFP5N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFP5N100P

    Abstract: IXFA5N100P 5N100p
    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFA5N100P IXFH5N100P IXFP5N100P VDSS ID25 = 1000V = 5A ≤ 2.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original
    IXFA5N100P IXFH5N100P IXFP5N100P O-263 5N100P IXFP5N100P IXFA5N100P PDF

    Contextual Info: Advance Technical Information VDSS ID25 IXFP5N100PM PolarTM HiPerFETTM Power MOSFET RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.3A Ω ≤ 2.8Ω OVERMOLDED (IXFP.M) OUTLINE Symbol Test Conditions Maximum Ratings


    Original
    IXFP5N100PM 5N100P 7-13-A PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFA5N100P IXFH5N100P IXFP5N100P VDSS ID25 = 1000V = 5A Ω ≤ 2.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original
    IXFA5N100P IXFH5N100P IXFP5N100P O-263 5N100P PDF