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    IXFP4N100P Search Results

    IXFP4N100P Datasheets (2)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFP4N100P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 4A TO-220 Original PDF 4
    IXFP4N100PM
    		IXYS MOSFET N-CH 1000V 2.1A TO220 Original PDF 119.33KB
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    IXFP4N100P Price and Stock

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    IXYS Corporation IXFP4N100P

    MOSFET N-CH 1000V 4A TO220AB
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    DigiKey IXFP4N100P Tube 300
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    Mouser Electronics IXFP4N100P
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    TME IXFP4N100P 406 1
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    IXYS Corporation IXFP4N100PM

    MOSFET N-CH 1000V 2.1A TO220
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    Littelfuse Inc IXFP4N100P

    DiscMosfetN-CH HiPerFET-Pola TO-220AB/FP
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    Onlinecomponents.com IXFP4N100P
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    Littelfuse Inc IXFP4N100PM

    DiscMosfetN-CH HiPerFET-Pola TO-220AB/FP
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    IXFP4N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information IXFP4N100PM PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS on = 1000V = 2.1A   3.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 M


    Original     		IXFP4N100PM 4N100P 7-03-13-B PDF

    Contextual Info: Advance Technical Information IXFP4N100PM PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS on = 1000V = 2.5A Ω ≤ 3.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ


    Original     		IXFP4N100PM 4N100P 1-22-10-A PDF

    IXFA4N100P

    Abstract: IXFP4N100P 4n100 478B2
    Contextual Info: IXFA4N100P IXFP4N100P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 4A ≤ 3.3Ω Ω TO-263 AA (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		IXFA4N100P IXFP4N100P O-263 4N100P IXFA4N100P IXFP4N100P 4n100 478B2 PDF

    MOSFET IXYS TO-220

    Abstract: 4N100
    Contextual Info: Preliminary Technical Information IXFA4N100P IXFP4N100P PolarTM Power MOSFET HiPerFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1000V = 4A ≤ 3.3Ω Ω TO-263 (IXFA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFA4N100P IXFP4N100P O-263 4N100P MOSFET IXYS TO-220 4N100 PDF

    Contextual Info: Advance Technical Information PolarTM HiperFETTM Power MOSFET VDSS ID25 IXFP4N100PM RDS on = 1000V = 2.5A Ω ≤ 3.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ


    Original     		IXFP4N100PM 4N100P 1-22-10-A PDF

    Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFA4N100P IXFP4N100P RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 4A ≤ 3.3Ω Ω TO-263 AA (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		IXFA4N100P IXFP4N100P O-263 O-220AB 4N100P PDF