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    9N160

    Abstract: 9N140 IXBF 9N140
    Contextual Info: Advanced Technical Information IXBF 9N140 IC25 IXBF 9N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = = = = 7A 1400/1600 V 4.9V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C


    Original     		9n1409n160ixbf09ixbf 9n140 PDF

    9N160

    Abstract: 100w 5a IGBT
    Contextual Info: Advanced Technical Information IXBF 9N140 IC25 IXBF 9N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = = = = 7A 1400/1600 V 4.9V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C


    Original     		9n1409n160ixbf09100w 5a igbt PDF