IXA55I1200H Search Results
IXA55I1200H Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IXA55I1200HJ |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 84A 290W TO247 | Original | 5 |
IXA55I1200H Price and Stock
IXYS Corporation IXA55I1200HJIGBT PT 1200V 84A ISOPLUS247 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXA55I1200HJ | Tube |
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IXA55I1200HJ | 10 |
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IXA55I1200HJ | 3,714 |
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IXA55I1200HJ | 2,257 | 1 |
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Littelfuse Inc IXA55I1200HJDisc Igbt Xpt-Genx3 Isoplus247/ Tube |Littelfuse IXA55I1200HJ |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXA55I1200HJ | Bulk | 300 |
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IXA55I1200H Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IXA55I1200HJ preliminary XPT IGBT VCES = 1200 V I C25 = 84 A VCE sat = 1.8 V Single IGBT Part number IXA55I1200HJ Backside: isolated (C) 2 (G) 1 (E) 3 Features / Advantages: Applications: Package: ISOPLUS247 ● Easy paralleling due to the positive temperature |
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IXA55I1200HJ ISOPLUS247 60747and | |
IXA55I1200HJ
Abstract: IXYS TO-247 DATE CODE ISOPLUS247 3600-T ixa55 IXA55I1200H
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IXA55I1200HJ 60747and IXA55I1200HJ IXYS TO-247 DATE CODE ISOPLUS247 3600-T ixa55 IXA55I1200H | |
Contextual Info: IXA55I1200HJ preliminary I C25 = = VCES VCE sat typ = XPT IGBT Single IGBT 84 A 1200 V 1.8 V (C) 2 Part number (G) 1 (E) 3 Features / Advantages: Applications: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) |
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IXA55I1200HJ 60747and | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 |