IX 3253 Search Results

Contextual Info: SILICON SYSTEMS INC b l E ]> • 3253^5 DOObbS? 7^0 SSI 32R2300/2300R/2301/2301R +3.3V/5.0V, 2, 4-Channel 2-Terminal Read/W rite Device ¿ m m s u s k m s ' A TDK Group/Company Advance Information December 1992 DESCRIPTION FEATURES “ T-S2_-3fc +3.0V - 5.5V voltage supply

ims g171

Abstract: TLX2 AM81C176-50 INMOS G171 25q32 4558 dd inmos IMSG176 RS 4558 RS-170a rsn 313
Contextual Info: Preliminary Advanced Micro Devices A m 8 1 C 176 CMOS Color Palette DISTINCTIVE CHARACTERISTICS 11 Triple 6-bit Digital-to-Analog Converters DACs • Plug-in Replacement for Inmos G171 and G176 ■ VGA hardware and software compatible ■ Clock rates up to 80 MHz

SN54H62

Abstract: SN74H53 SN74H62
Contextual Info: TYPES SN54H62, SN74H62 4-WIDEAND-OR EXPANDERS REVISED DECEMBER 1983 f • Package Options Include Plastic and Ceramic DIPs S N 5 4 H 6 2 . . . J P AC K A G E S N 7 4 H 6 2 . . . J OR N P AC K A G E {TO P V IE W • Dependable Texas Instruments Quality and Reliability

Q62702-P3604

Contextual Info: S il ic o n P h o t o d e t e c t o r s S i -F o t o d e t e k t o r e n 1. Foto IC für Fernsteuerung rA=25 c Gehäuse Package 1. Photo IC for Remote Control rA=25 c Halbwinkel Halfangle <P deg. Ordering code Typ Type Frequenz Frequency / kHz SFH 5110-30

Contextual Info: a Preliminary Advanced Micro Devices A m 81C 176 CMOS Color Palette DISTINCTIVE CHARACTERISTICS • Triple 6-bit Digital-to-Analog Converters DACs ■ Plug-in Replacement for Inmos G171 and G176 ■ VGA hardware and software compatible ■ Clock rates up to 80 MHz

Contextual Info: Brocktree Contents AID Converters B t2 0 8 18 MSPS 8-Bit Flash Video A/D Converter 3 -3 ¡mage Digitizers B t2 5 1 18 MSPS Single Channel 8-Bit Im age Digitizer 3 -1 9 B t2 5 3 18 MSPS Triple Channel 8-Bit Image Digitizer 3 -4 3 Genlock / Video Timing B t2 6 1

74H62

Abstract: SN54H62 SN74H53 SN74H62 IX 3253
Contextual Info: TYPES SN54H62,SN74H62 4-W ID E A N D -O R EXPANDERS R E V IS E D D E C E M B E R 1 9 8 3 S N 5 4 H 6 2 . - - JPAC KAG E P ackage Options Include Plastic and C eram ic D IPs S N 74H 62 . . . J O R N PACKAGE {T O P V IE W Dependable Texas Instrum ents Quality

Q62702-P1606

Abstract: fotodioden BP 104 FAS
Contextual Info: Si-Fotodetektoren Silicon Photodetectors 6.2 PIN Fotodioden Type *ab 4/95 (*asof 4/95) <l> Radiant sensitive area h ^R Fig. 2.2x2.2 55 (>40) 2 (£30) 400. 1100 20ns/50i! Q62702-P1605 28 ±60 2 65x2.65 2 (£ 3 0 ) 400. .1100 20ns/50ii Q62702-P1602 27 BPX90S

Contextual Info: SSI 32R2320/21/22/23/24 mmMktns' 3V, 5V, 4-Channel 2-Terminal Read/Write Device A TDK Group/Company December 1994 DESCRIPTION FEATURES The SSI 32R2320/21/22/23/24 are BiCMOS mono­ lithic integrated circuit designed for use with twoterminal recording heads. They provide a low noise

31136

Abstract: L3553
Contextual Info: 4 DR/4W1NG MADE I N T H I R D ANGLE P R O J E C T I O N THIS DRAWING IS UNPUBLISHED. COPYRIGH T 19 <Z> RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC CM RIGHTS RESERVED. REVISIONS DIST 54 ZONE LTR DESCRIPTION DATE REACT -2 THRU -24 AND

l 7251 3.1

Abstract: MTA-156
Contextual Info: 4 DR/4VJI NG <Z> M AD E I N T H I R D A N G L E P R O J E C T I O N THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. LOC CM ALL INTERNATIONAL RIGHTS RESERVED. DIST 54 REVISIONS ZONE LTR REACT -2 THRU -24 g REV PER EC 0730-0243-95

1471-fi

Abstract: MTA-156
Contextual Info: DR/4W1NG 4 MADE I N T H I R D ANGLE P R O J E C T I O N T H I S DRAWING IS UNPUBLISHED. COPYRIGHT 19 <Z> RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC CM RIGHTS RESERVED. DIST 54 REVISIONS ZONE LTR DESCRIPTION DATE REACT -2 THRU -24 g

MTA-156

Abstract: l 7251 3.1
Contextual Info: DR/4VJI NG 4 <Z> MADE IN T H I R D ANGLE P R O J E C T I O N T H I S DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC DIST CM 54 RIGHTS RESERVED. REVISIONS ZONE LTR DESCRIPTION DATE REACT -11 THRU -24

LT 6243

Abstract: MTA-156
Contextual Info: DR/4VJI 4 <Z> NG MADE IN T H I R D ANGLE P R O J E C T I O N T H I S DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC DIST CM RIGHTS RESERVED. 54 REVISIONS ZONE LTR DESCRIPTION P DATE REACT -11,-13,-74,-16 THRU -24

Contextual Info: DR/4W 1NG 4 MADE THIS DRAWING <Z> IN T H I R D A N G L E P R O J E C T I O N IS UNPUBLISHED. LOC RELEASED FOR PUBLICATION COPY RI GH T 19 BY AMP IN CORPORATED. CM ALL INTERNATIONAL R I GH TS RESERVED. R E V IS IO N S DIST 54 ZO N E LTR DESC R I P T I O N

MTA-156

Abstract: l 7251 3.1
Contextual Info: 4 D R /4VJI NG M AD E I N T H I R D A N G L E P R O J E C T I O N THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPY RI GH T 19 BY AMP IN CORPORATED. ALL INTERNATIONAL <Z> LOC CM R I GH TS RESERVED. R E V IS IO N S DIST 54 ZON E LTR D A TE DESC R I P T I O N

Contextual Info: DR/4W1NG MADE T H I S DRAWING 4 IN THIRD ANGLE IS UNPUBLISHED. COPYRIGHT 19 <Z> PROJECTION RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC CM RIGHTS RESERVED. DIST 54 R E V ISIO N S ZO N E LTR DATE D E S C R IP T IO N V REACT - 7 , - 1 1 , - 1 3 , - 1 4 , - 1 6 THRU

31136

Contextual Info: DR/4W 1NG 4 MADE T H I S DRAWING IS UNPUBLISHED. <Z> IN T H I R D A N G L E P R O J E C T I O N AMP BY COPYRIGHT 19 LOC RELEASED FOR PUBLICATION IN CORPORATED. DIST CM 54 ALL INTERNATIONAL R I GH TS RESERVED. REVISIONS ZO N E LTR DESC R I P T I O N DATE

foto transistor

Abstract: Q62702-P1614 Q62702-P1610 Q62702-P1611 Q62702-P1615 Q62702-P1638 Q62702-P1639 SFH325FA
Contextual Info: SFH 325 SFH 325 FA SFH 325 SFH 325 FA fplf6867 fpl06867 NPN-Silizium-Fototransistor im SMT SIDELED-Gehäuse Silicon NPN Phototransistor in SMT SIDELED-Package Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale

Contextual Info: 4 DR/4VJI NG MA D E I N T H I R D A N G L E T H I S D R A W I N G IS UNPUBLISHED. COPY RI GH T 19 <Z> PROJECTION RELEASED FOR PUBLICATION BY AMP IN CORPORATED. ALL INTERNATIONAL LOC CM R I GH TS RESERVED. DIST REVISIONS 54 ZON E LTR DESC R I P T I O N DATE

v 325 t

Abstract: siemens SFH nm
Contextual Info: SIEMENS NPN-Silizium-Fototransistor im SMT SIDELED -Gehäuse Silicon NPN Phototransistor in SMT SIDELED -Package SFH 325 SFH 325 FA Maße in m m , w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Wesentliche Merkmale Features

Contextual Info: SIEMENS NPN-Silizium-Fototransistor im SMT SIDELED -Gehäuse SFH 325 SFH 325 FA Silicon NPN Phototransistor in SMT SIDELED -Package 1 ^ O co (O o Q_ Ufe 1 ^ (O CO (O M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.

fotodiode oe 100

Abstract: siemens SFH nm SFH 462 BPY64 BPW 64 photo siemens germanium transistoren PX60 SIEMENS Phototransistors BPY siemens transistoren germanium
Contextual Info: SIEMENS Typenübersicht Selector Guide Inhaltsverzeichnis Fotodetektoren Contents Photodetectors Page Seite Fotomodul für Fernbedienungen.12 Photomodule for Remote Control Systems. 12

32R2020R

Abstract: 32R2020R-4CL
Contextual Info: SSI 32R2020R/2021R cm m M 5V, 2, 4, 6 , 10-Channel Thin-Film Read/Write Device b t is * A TDK Group/Company January 1993 DESCRIPTION FEATURES The SSI 32R2020R/2021R are bipolar monolithic inte­ grated circuits designed for use with two-terminal re­ cording heads. They provide a low noise read ampli­