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    IW4081B Search Results

    IW4081B Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IW4081BD
    Integral Quad 2-input AND gate, high-voltage silicon-gate CMOS Original PDF 102.2KB 4
    IW4081BN
    Integral Quad 2-input AND gate, high-voltage silicon-gate CMOS Original PDF 102.2KB 4

    IW4081B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IW4081BD

    Abstract: IW4081BN
    Contextual Info: TECHNICAL DATA IW4081B Quad 2-Input AND Gate High-Voltage Silicon-Gate CMOS The IW4081B AND gates provide the system designer with direct implementation of the AND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 A at 18 V over full


    Original
    IW4081B IW4081B IW4081BN IW4081BD PDF

    IW4081BD

    Abstract: IW4081BN H 138 lh138
    Contextual Info: TECHNICAL DATA IW4081B Quad 2-Input AND Gate High-Voltage Silicon-Gate CMOS The IW4081B AND gates provide the system designer with direct emplementation of the AND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C


    Original
    IW4081B IW4081B IW4081BN IW4081BD H 138 lh138 PDF

    IW4081BD

    Abstract: IW4081BN
    Contextual Info: TECHNICAL DATA IW4081B Quad 2-Input AND Gate High-Voltage Silicon-Gate CMOS The IW4081B AND gates provide the system designer with direct emplementation of the AND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 A at 18 V over full package-temperature


    Original
    IW4081B IW4081B IW4081BN IW4081BD 012AB) PDF

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


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