IW4023BN
Abstract: IW4023BD
Contextual Info: TECHNICAL DATA IW4023B Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4023B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C
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IW4023B
IW4023B
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IW4023BN
Abstract: IW4023BD
Contextual Info: TECHNICAL DATA IW4023B Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4023B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 A at 18 V over full package-temperature
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IW4023B
IW4023B
IW4023BN
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012AB)
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IL311ANM
Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.
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IW4023BN
Abstract: IW4023BD
Contextual Info: TECHNICAL DATA IW4023B Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4023B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full package-temperature
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Original
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IW4023B
IW4023B
IW4023BN
IW4023BD
012AB)
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