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    IW4011B Search Results

    IW4011B Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IW4011B
    		Beijing Estek Electronics NAND gates provide the system designer with direct implementation of the NAND function Original PDF 96.26KB 4
    IW4011B
    		Unknown Original PDF 112.01KB 4
    IW4011BD
    		Integral Quad 2-input NAND gate, high-voltage silicon-gate CMOS Original PDF 112.01KB 4
    IW4011BN
    		Integral Quad 2-input NAND gate, high-voltage silicon-gate CMOS Original PDF 112.01KB 4
    SF Impression Pixel

    IW4011B Price and Stock

    IKSemicon Co Ltd

    IKSemicon Co Ltd IW4011BD

    Logic IC Gate Digital; NAND; CH:4; IN:2; CMOS CD40; 3-18V; -55+125 deg.C; SMD; SO14
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Maritex IW4011BD 369 1
    • 1 $0.17
    • 10 $0.17
    • 100 $0.14
    • 1000 $0.13
    • 10000 $0.13
    		Buy Now

    IW4011B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IW4011B

    Contextual Info: 北京伊泰克电子有限公司 简介 IW4011B 是一种可供系统设计师直接实现“与非”功能的与非门。 特性 1 工作电压范围：3.0V～18V 2、 超出工作温度范围且在 18V 时最大输入电流为 1uA 25℃，18V 时是 100nA


    Original     		IW4011B 0V18V 100nA IW4011B PDF

    40111

    Abstract: IW4011B IW4011BD IW4011BN
    Contextual Info: TECHNICAL DATA IW4011B Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4011B NAND gates provide the system designer with direct implementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 A at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C


    Original     		IW4011B IW4011B IW4011BN IW4011BD 40111 PDF

    6A07

    Abstract: IW4011B
    Contextual Info: IW4011B Description The IW4011B NAND gates provide the system designer with direct implementation of the NAND function. Features •   Operating Voltage Range: 3.0 to 18 V at 18 V over full packageMaximum input current of 1 temperature range 100 nA at 18 V and 25 C


    Original     		IW4011B IW4011B 6A06--6A07 6A07 PDF

    IW4011BN

    Abstract: 4 nand dip 16 supply voltage 30 v IW4011B IW4011BD
    Contextual Info: TECHNICAL DATA IW4011B Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4011B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C


    Original     		IW4011B IW4011B IW4011BN IW4011BD 4 nand dip 16 supply voltage 30 v PDF

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


    Original     		PDF