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ITZ25C12P Abstract: DS5072 T0247 Contextual Info: ITZ25C12 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5072 - 1.1 January 1999 The ITZ25C12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a	OCR Scan	ITZ25C12 DS5072 ITZ25C12 ITZ25C12P T0247	PDF

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ITZ25C12P

Abstract: DS5072 T0247
Contextual Info: ITZ25C12 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5072 - 1.1 January 1999 The ITZ25C12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a

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ITZ25C12 DS5072 ITZ25C12 ITZ25C12P T0247

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