ITT8507 Search Results
ITT8507 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| ITT8507D | M/A-COM | 6W Power Amplifier Die (13.0 - 14.5 GHz) | Original | 53.28KB | 2 | ||
| ITT8507FN | M/A-COM | 4W Power Amplifier (12.5 - 14.5 GHz) | Original | 20.95KB | 1 | ||
| ITT8507FP | M/A-COM | 4W Power Amplifier (12.5 - 14.5 GHz) | Original | 20.95KB | 1 |
ITT8507 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ITT8507DContextual Info: 6W Power Amplifier Die 13.0 – 14.5 GHz ITT8507D ADVANCED INFORMATION FEATURES • • • • • Broadband Performance 20% Typical Power Added Efficiency at P1dB 17 dB Typical Gain at P1dB 50Ω Input/Output Impedance Self-Aligned MSAG MESFET Process |
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ITT8507D ITT8507D | |
gsat
Abstract: GaAs MESFET ITT
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ITT8507 8507FN 8507FP gsat GaAs MESFET ITT | |
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Contextual Info: 4W Power Amplifier 12.5 – 14.5 GHz ITT8507 ADVANCED INFORMATION FEATURES • • • • 20% Typical Power Added Efficiency High Linear Gain: 17 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8507FN RFIN |
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ITT8507 8507FN 8507FP ITT8507 | |
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Contextual Info: 6W Power Amplifier Die 13.0 – 14.5 GHz ITT8507D ADVANCED INFORMATION Features • • • • • Broadband Performance 20% Typical Power Added Efficiency at P1dB 17 dB Typical Gain at P1dB 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process |
Original |
ITT8507D ITT8507D |