sealectro
Abstract: umbilical connector missile Cannon connectors aircraft audio plug foot step generation of electricity cannon plug standard pin electrical house wiring SMA rf pogo pin ITT Cannon SMB Connectors mcdonnell douglas connector
Contextual Info: Interconnect Solutions History Cannon, VEAM & BIW www.ittcannon.com Cannon, VEAM, BIW A Historical Achievment of Technology Leadership Defining and Championing Innovation Showcasing a portfolio of creativity, ITT’s “Engineered For Life” execution embraces
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wor0050sealectroumbilical connector missilecannon connectors+7aircraft audio plugfoot step generation of electricitycannon plug standard pinelectrical house wiringsma rf pogo pinitt cannon smb connectorsmcdonnell douglas connector
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N82S123F
Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
Contextual Info: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/N82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which
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n82s23/n82s12382s2382s123n82s123f+7n82s123nn82s23f82s123 programmingn82s23nsignetics promsignetics 82s123n82s123
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N74S301
Abstract: Signetics decoder ITT gemini
Contextual Info: Signetics Memories - Bipolar Ram N74S200/201, N74S301 - 256 Bit TTL Ram Cont. B LO C K D IA G R A M WRITE AMPLIFIER* D ATA INRUT B U FFE R 13 E 3 -r» » ( 2) £* t<¡3 isfi AD DRESS B U FFE R 1:1« (X) DECO DER <u> 1 1 16 X 16 M ATR IX 1 1 (12) W I 16
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n74s200/201n74s301signetics decoderitt gemini |
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I2102A
Abstract: 2102AN 1024x1 static ram 2102A-1 53A8 2102AL I2102 MOS-RAM Signetics 2102A memory
Contextual Info: S ig n e tics Memories M O S - R A M S 2102A—1024 Bit Static MOS RAM 1024x 1 CONNECTION DIAGRAM GENERAL DESCRIPTION The 2102A is a high speed static random access memory element using n-channel MOS devices integrated on a m onolithic array. It uses fu lly dc stable (static) circuitry
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1024x1i2102ali2102a2102an+81024x1 static ram2102a-153a82102ali2102mos-ramsignetics2102a memory
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2533N
Abstract: Gemini 2 2533-N Signetics 2533
Contextual Info: S ig n e tic s Memories - Shift Register 2533 - 1024-Bit Static Shift Register CONNECTION D1AGFIAM GENERAL DESCRIPTION The 2533 static shift register consists of enhancement mode p-channel silicon gate MOS devices integrated on a single m onolithic chip. The 1024-bit register is equipped w ith 2 data inputs
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1024-bit2533ngemini 22533-n+1signetics 2533
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N10149F
Abstract: N10149 ecl 10K signetics 10149
Contextual Info: S ig n e tic s Memories - Bipolar Proms N10149—1024 Bit Field Programmable Prom. CONNECTION DIAGRAM vcci r 1 GENERAL DESCRIPTION The 10149 is field programmable, meaning thcit custom patterns are immediately available by follow ing the fusing procedure given in this data sheet. The standard device is
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n10149-1024500ii50kiin10149f+3n10149ecl 10k signetics10149
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2527N
Abstract: 2528N 2529N 2529 250-Bit
Contextual Info: Signetics M em ories - S h ift Register 2527 Dual 240-Bit Static Shift Register 240 x 2 2528 Dual 250-Bit Static Shift Register (250 x 2) 2529 Dual 256-Bit Static Shift Register (256 x 2) C O N N E C TIO N D IA G R A M G E N E R A L D E SC RIPTIO N The 2527 2 4 0 -b it, 2528 250 -bit, and the 252 9 2 5 6 -b it
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240-bit250-bit256-bit2527n+32528n2529n2529
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SIGNETICS 268
Abstract: Signetics ITT gemini 24 SIGNETICS N82S25 N3101 N74S189 N74S89 ifr 540 gemini
Contextual Info: Signetics Memories - Bipolar Ram N82S25, N3101 A , N74S89 and N 74S189 Series Bipolar Scratch Pad Mem ory 1 6 x 4 Continued 64 Bit BLOCK D I A G R A M G N D = (8 ) ( ) * DAT* IN *N D o u t P in n u m b e r PLEA SE Q U O TE STOCK NO. A N D M A N U F A C T U R E R S P A R T NO. WHEN O R DERIN G
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n82s25n3101n74s89n74s189+6signetics 268signeticsitt gemini24 signeticsifr 540gemini
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MA747C
Abstract: 55969R A747CN JUA747CK MA747 MA747K
Contextual Info: S ig n e tic s Integrated Circuits - Operational Amplifiers jliA 747 Series — Dual Operational Amplifier CONNECTION DIAGRAM GENERAL DESCRIPTION The 747 is a pair of high performance m onolithic operational amplifiers constructed on a single silicon chip.
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jia747jua741ma747c55969r+4a747cnjua747ckma747ma747k
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signetics 2606
Abstract: "Pin compatible" Signetics
Contextual Info: Signetics Memories-IVÌOS RAMS 2606—1024 Bit Read/Write Static MOS RAM 256 x 4 C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The 2606 is fabricated w ith n-channel silic o n gate MOS technology and achieves an access tim e o f less than
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750nsi/04usignetics 2606pin compatible" signetics |
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signetics sd200
Abstract: SIGNETICS SD201 041 itt diode SD201 Scans-0010592 SD200 SD202 SD203
Contextual Info: S ig n e tic s Field Effect Transistors-D-MOS C O N N E C T IO N D IG R A M SD 200 - Series D-MOS G E N E R A L D E S C R IP TIO N D ouble -diffused silicon fie ld -e ffe c t transistors w ith insulated gates, in ten ded fo r u.h .f. and genera purpose r.f.
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sd201sd203sd200sd202+4signetics sd200signetics sd201041 itt diodescans-0010592
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NE521
Abstract: NE521N "dual differential comparator" Ne521 signetics
Contextual Info: Signetics Integrated Circuits - Comparators NE521 Series — High Speed Dual Differential Comparator/Sense Am p C O N N E C T IO N D I A G R A M F,N P A C K A G E FEATURES • 12ns m axim um guaranteed propagation d elay • 20mA maximum input bias current
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ne521ne521ndual differential comparatorne521 signetics |
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82S25
Abstract: N82S25N 74S189 N82S25 N3101 N3101A N74S189 N74S89 N82S25F
Contextual Info: Signetics M em ories - Bipolar Ram N82S25, N3101 A, N74S89 and N74S189 Series — 64 Bit Bipolar Scratch Pad Memory 16 x 4 CONNECTION DIAGRAM GENERAL DESCRIPTION This fam ily of Read/Write Random Access Memories is ideal for use in scratch pad and high-speed buffer memory
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n82s25n3101n74s89n74s189+582s25n82s25n74s189n3101an82s25f
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041 itt diode
Abstract: 5d214 5d211 SD211 S02V0 SD213 sd215 signetics l4401 5d213 s0211
Contextual Info: S ig n e tic s Field Effect Transistors-D-M OS C O N N E C T IO N D IA G R A M SD 210 -Series G E N E R A L D E SC R IPTIO N Double-di-ffused silico n fie ld -e ffe c t transistors w ith insulated gates, p rim a rily intended fo r analogue/digital sw itch and sw itc h d river app lica tions. The y featu re lo w
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sd211sd213sd215s02v0+10sd212sd21456061d041 itt diode5d2145d211sd215 signeticsl44015d213s0211
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RAM 2102
Abstract: 2102-2 RAM 2102 Static RAM tle 4201 1024x1 static ram 2102N 56369 "Pin compatible" Signetics 1024X1
Contextual Info: S ìg n e tìc s Memories M O S R A M C O N N E C T IO N D IA G R A M 2102-1024 Bit Read/Write Static MOS RAM 1024x1 ID A7 3a Ag » .E G E N E R A L D E S C R IP T IO N T h e 210 2 , 2102-1 and 2 1 0 2 -2 are static random access read/write mem ories fabricated with low threshold nchannel silicon gate technology.
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1024x1ram 21022102-2 ram2102 static ram+5tle 42011024x1 static ram2102n56369pin compatible" signetics
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N3001N
Abstract: 74S182 N3001
Contextual Info: S ig n e tic s Microprocessors N3001 - Microprogram Control Unit connection diagram G E N E R A L D E SC R IPTIO N The N300? MCU is o n e e le m e n t o f a b ip o la r m ic rocom puter set. W hen used w ith th e 3002, 74S18 2 , ROM o r PR O M , a pow e rfu l m ic ro
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TDA2640
Abstract: vg16 Gemini 2 ITT gemini Signetics NE
Contextual Info: Signetics Integrated Circuits - General TDA2640 Switched Mode Power Supplies Integrated Circuits GENERAL DESCRIPTION The TD A2640 is a m onolithic integrated circuit fo r con trolling single ended switched-mode power supplies. It incorporates the following functions: —
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signetics ne540
Abstract: NE540 NE540L SE540 Signetics SE540
Contextual Info: S ig n e tic s Integrated C ircu its-A u dio Circuits C O N N E C TIO N D IA G R A M NE540 Power Driver G E N E R A L DE SC R IPTIO N The N E /S E 540 is a m o n o lith ic , class A 8 pow er a m p lifie r designed specifically to drive a pair o f com plem entary
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ne540ne/se540se540signetics ne540+2ne540lsignetics se540
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82S2708
Abstract: N82S2708F N82S2708 S82S2708
Contextual Info: S ig n e tic s Memories - Bipolar Proms- N82S2708 - 8192 Bit Field Programmable Bipolar Prom CONNECTION DIAGRAM GENERAL DESCRIPTION The 82S2708 is field programmable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data sheet. The standard
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TCA240
Abstract: transistor ITT TBA673 DOUBLE BALANCED MODULATOR AM modulator and demodulator circuit "balanced modulator demodulator" modulator VCR 63918H
Contextual Info: S ignetics Integrated Circuits - General C O N N E C T IO N D IA G R A M TCA240 — Double Balanced Modulator/ Demodulator G E N E R A L DE SC R IPTIO N The T C A 240 is a m onolithic integrated circui t used for general applications, such as: — — —
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tca24063918htba673transistor itt+4double balanced modulatoram modulator and demodulator circuitbalanced modulator demodulatormodulator vcr
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EA4900
Abstract: EA4600 til 071 Signetics TTL 2600 signetics
Contextual Info: S ig n e tic s M e m o rie s-M O S R O M 260016384-Bit Static MOS ROM 2048 x 8 C O N N E C TIO N D IA G R A M GNO Q T G E N E R A L DE SC R IPTIO N The 2600 o utputs appear and remain in a steady state c o n d itio n u n til a new address is read. The 16,384 bits are
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16384-bit300/550nsea4900ea4600+3til 071signetics ttl2600 signetics
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"Pin compatible" Signetics
Abstract: MOS-RAM
Contextual Info: S ig n e tic s Memories—MOS-RAMS 2101-1024 Bit Static MOS—RAM 256 x 4 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 2101 series is high performance, low pow er static read/write R A M 's . T h e 2101 series is fabricated with n-channel silicon gate
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pin compatible" signeticsmos-ram |
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AM9216
Abstract: IM7780 AM2111 IM7552 9316A AM9208 signetics 2524 2102 ram fairchild AM9060 Signetics 2518
Contextual Info: S ig n e tic s M em ories M O S RAMs AMD A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 02/ 9 10 2 AM 9060 AM 9216 AM 9208 AM 1402 A M 1403 A M 140 4 AM 1405 A M 150 6 A M 1507 A M 2806 AM 2807 AM 2808 AM 2809 AM 2833 M O S M EM O R Y C RO SS R E FE R E N C E
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am2101/9101am2111/9111am2112/9112am2102/9102+13am9060am9216am9208am1402am2807am2808im7780am2111im75529316asignetics 25242102 ram fairchildsignetics 2518
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78MG
Abstract: 79MG MA79MG ma78mg transistor ITT ifr 157
Contextual Info: S ig n e tic s Integrated Circuits - Voltage Regulators m A 79MG Series — 4 Terminal Adjustable Voltage Regulators C O N N E C TIO N D IA G R A M G E N E R A L D E SC RIPTIO N The /¿A79MG are 4-Term inal A d justa ble Voltage Regulators are designed to deliver continuo us load currents; o f up to
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ma79mg500ma78mg79mg+3ma78mgtransistor ittifr 157
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